Abstract: The present disclosure relates to a novel aluminum-containing compound, a method of preparing the aluminum-containing compound, a precursor composition for forming a film including the aluminum-containing precursor compound, and a method of forming an aluminum-containing film using the precursor composition for forming a film.

Abstract: Disclosed are a Mach-Zehnder interferometric optical modulator and a method for manufacturing the same. The modulator includes first and second lower clad layers stacked on a substrate, a core layer on the first and second lower clad layers, a first upper clad layer on the core layer, a second upper clad layer on the first upper clad layer, and electrodes on the second upper clad layer. The second upper clad layer includes an input waveguide, an output waveguide spaced apart from the input waveguide, branch waveguides branched from the input waveguide and coupled to the output waveguide, and insulating blocks provided on both outer sides of the branch waveguides.

Abstract: Provided is a method of manufacturing an optical integrated device. The method includes forming a lower clad layer on a substrate, forming a plurality of mask patterns arranged in one direction on the lower clad layer, forming a core layer on a portion of the lower clad layer by a selective area growth method using the mask patterns as deposition masks, and forming an upper clad layer on the core layers, wherein the mask patterns have different widths or include mask layers of different materials.

Abstract: Disclosed are a Mach-Zehnder interferometric optical modulator and a method for manufacturing the same. The modulator includes first and second lower clad layers, a core layer, an upper clad layer, a waveguide, and electrodes. The waveguide may include an input waveguide, a waveguide divider, branch waveguides, and a waveguide combiner. Each of the branch waveguides includes first and second connection regions connected to the waveguide combiner and the waveguide divider, respectively, and a phase shift region having a cross-section of a reverse mesa structure that has an upper width that is the same as widths of the first and second connection regions and a lower width that is smaller than the widths of the first and second connection regions.

Abstract: Disclosed are a quantum light source and an optical communication apparatus including the same. The quantum light source device includes a vertical reflection layer disposed on a substrate, a lower electrode layer disposed on the vertical reflection layer, a horizontal reflection layer disposed on the lower electrode layer, a quantum light source disposed in the horizontal reflection layer, and an upper electrode layer disposed on the horizontal reflection layer.

Abstract: This invention relates to a stilbene derivative and a method of preparing the same, and more particularly to a novel stilbene derivative for inhibiting the function of cyclophilin, which is effective at the prevention of cyclophilin-related diseases or at the treatment of symptoms of such diseases, and to a method of preparing the same.

Abstract: Provided is a waveguide photodetector including a semiconductor substrate, a first optical waveguide and a second optical waveguide, which are sequentially laminated on the semiconductor substrate, in which each of the first optical waveguide and the second optical waveguide includes a first portion and a second portion, and the first portion extends from the second portion in a first direction parallel to a top surface of the semiconductor substrate, a refractive index matching layer disposed on the second portion of the second optical waveguide, a clad layer disposed on the refractive index matching layer, and an absorber disposed between the refractive index matching layer and the clad layer. Here, the second optical waveguide has a first conductive-type, the clad layer has a second conductive-type opposite to the first conductive-type, and the refractive index matching layer includes a first semiconductor layer that is an intrinsic semiconductor layer.

Abstract: The present disclosure provides a novel Group 4 metal element-containing compound, a method of preparing the Group 4 metal element-containing compound, a precursor composition including the Group 4 metal element-containing compound for film deposition, and a method of forming a Group 4 metal element-containing film using the Group 4 metal element-containing compound. The novel Group 4 metal element-containing compound according to embodiments of the present disclosure makes it possible to form a Group 4 metal element-containing film by atomic layer deposition at a higher temperature than conventionally known Group 4 metal element-containing compounds.

Abstract: This invention relates to a stilbene derivative and a method of preparing the same, and more particularly to a novel stilbene derivative for inhibiting the function of cyclophilin, which is effective at the prevention of cyclophilin-related diseases or at the treatment of symptoms of such diseases, and to a method of preparing the same.

Abstract: A stilbene derivative and a method of preparing the A stilbene derivative are disclosed. The stilbene derivative is provided for inhibiting the function of cyclophilin, which is effective at the prevention of cyclophilin-related diseases or at the treatment of symptoms of such diseases. The method of preparing a stilbene derivative includes reacting a phenylacetonitrile derivative with a benzaldehyde derivative.

Abstract: Provided is a waveguide photodetector including a semiconductor substrate, a first optical waveguide and a second optical waveguide, which are sequentially laminated on the semiconductor substrate, in which each of the first optical waveguide and the second optical waveguide includes a first portion and a second portion, and the first portion extends from the second portion in a first direction parallel to a top surface of the semiconductor substrate, a refractive index matching layer disposed on the second portion of the second optical waveguide, a clad layer disposed on the refractive index matching layer, and an absorber disposed between the refractive index matching layer and the clad layer. Here, the second optical waveguide has a first conductive-type, the clad layer has a second conductive-type opposite to the first conductive-type, and the refractive index matching layer includes a first semiconductor layer that is an intrinsic semiconductor layer.

Abstract: Provided is a quarter-wavelength shifted distributed feedback laser diode. The laser diode includes a substrate having a laser diode section and a phase adjustment section, a waveguide layer on the substrate, a clad layer on the waveguide layer, a grating disposed in the clad layer in the laser diode section, an anti-reflection coating disposed on one side walls, of the substrate, the waveguide layer, and the clad layer, adjacent to the laser diode section, and a high reflection coating disposed on the other side walls, of the substrate, the waveguide layer, and the clad layer, adjacent to the phase adjustment section.

Abstract: The present disclosure relates to a novel aluminum-containing compound, a method of preparing the aluminum-containing compound, a precursor composition for forming a film including the aluminum-containing precursor compound, and a method of forming an aluminum-containing film using the precursor composition for forming a film.

Abstract: Disclosed are a quantum light source and an optical communication apparatus including the same. The quantum light source device includes a vertical reflection layer disposed on a substrate, a lower electrode layer disposed on the vertical reflection layer, a horizontal reflection layer disposed on the lower electrode layer, a quantum light source disposed in the horizontal reflection layer, and an upper electrode layer disposed on the horizontal reflection layer.

Abstract: Provided is a tunable semiconductor laser including an active gain region in which an optical signal is generated according to a modulation signal, a mode control region in which a resonant mode is controlled according to a mode control signal, and a signal chirp of the optical signal is compensated according to a first compensation signal determined based on the modulation signal, and a distributed Bragg reflector (DBR) region in which an oscillation wavelength of the optical signal is determined based on a wavelength selection signal for the optical signal, a second compensation signal for compensating for a thermal chirp of the optical signal on a basis of the modulation signal, and a heater signal provided to a heater electrode.

Abstract: The present disclosure provides a novel Group 4 metal element-containing compound, a method of preparing the Group 4 metal element-containing compound, a precursor composition including the Group 4 metal element-containing compound for film deposition, and a method of forming a Group 4 metal element-containing film using the Group 4 metal element-containing compound. The novel Group 4 metal element-containing compound according to embodiments of the present disclosure makes it possible to form a Group 4 metal element-containing film by atomic layer deposition at a higher temperature than conventionally known Group 4 metal element-containing compounds.

Abstract: Liquid precursor compositions are provided, along with methods of preparing the liquid precursor compositions, and methods for forming layers using the liquid precursor composition, for example in vapor deposition processes such as CVD and ALD. In some embodiments, the liquid precursor compositions comprise a metal compound of the formula M(DAD)2, where M is Co or Ni and DAD is a diazadiene ligand.

Abstract: Provided is a quarter-wavelength shifted distributed feedback laser diode. The laser diode includes a substrate having a laser diode section and a phase adjustment section, a waveguide layer on the substrate, a clad layer on the waveguide layer, a grating disposed in the clad layer in the laser diode section, an anti-reflection coating disposed on one side walls, of the substrate, the waveguide layer, and the clad layer, adjacent to the laser diode section, and a high reflection coating disposed on the other side walls, of the substrate, the waveguide layer, and the clad layer, adjacent to the phase adjustment section.

Abstract: Provided is a tunable semiconductor laser including an active gain region in which an optical signal is generated according to a modulation signal, a mode control region in which a resonant mode is controlled according to a mode control signal, and a signal chirp of the optical signal is compensated according to a first compensation signal determined based on the modulation signal, and a distributed Bragg reflector (DBR) region in which an oscillation wavelength of the optical signal is determined based on a wavelength selection signal for the optical signal, a second compensation signal for compensating for a thermal chirp of the optical signal on a basis of the modulation signal, and a heater signal provided to a heater electrode.

Abstract: Provided is an optical detection device including a first ohmic contact layer of a first conductivity type, a second ohmic contact layer of a second conductivity type, and first and second mesa structures stacked between the first and second ohmic contact layers. The first mesa structure includes an electric field buffer layer; and a diffusion layer formed in the electric field buffer layer. The second mesa structure includes a light absorbing layer and a grading layer on the light absorbing layer.