Abstract: The present invention relates to a thermoplastic resin composition and a preparation method of the same, and more precisely a thermoplastic resin having excellent impact strength, surface gloss, and beautiful color, as well as a high level of hardness and scratch resistance, which comprises a) a primary graft copolymer prepared by polymerization of conjugated diene rubber latex with (metha)acrylic acid alkyl ester compound, aromatic vinyl compound and vinyl cyan compound; and b) a secondary copolymer prepared by polymerization of (metha)acrylic acid alkyl ester compound with aromatic vinyl compound and vinyl cyan compound.

Abstract: The present invention relates to a transparent thermoplastic resin composition which characteristically contains A) 20-80 weight % of graft copolymer composed of a) conjugated diene rubber latex; b) intermediate layer prepared by copolymerization of acrylic acid alkylester derivative and aromatic vinyl derivative with the above a); and c) graft layer prepared by copolymerization of methacrylic acid alkylester derivative or acrylic acid alkylester derivative, a romatic vinyl derivative and vinyl cyan derivative with the above b) and B) 20-80 weight % of MSAN copolymer prepared by copolymerization of methacrylic acid alkylester derivative or acrylic acid alkylester derivative, aromatic vinyl derivative and vinyl cyan derivative.

Abstract: Provided are a semiconductor device having a superlattice semiconductor layer and a method of fabricating the same. The semiconductor device includes a superlattice semiconductor layer in which first material layers and second material layers formed of different materials are alternately stacked. A plurality holes are formed in the first material layers and the second material layers forming a superlattice structure, and the holes are filled with materials of the adjacent material layers. The provided superlattice structure reduces a driving voltage by transferring charges through the holes in the first material layers and the second material layers while maintaining a predetermined optical confinement characteristic.

Abstract: The present invention discloses a circuit having a make-link type fuse. The circuit comprising a first make-link type fuse connected between a gate of a transistor and a first supply voltage.

Abstract: Provided are a III-V group GaN-based compound semiconductor device and a method of manufacturing the same. The device includes an AlGaN diffusion blocking layer and an InGaN sacrificial layer interposed between an active layer having a multiple quantum well and a p-type GaN-based compound semiconductor layer.

Abstract: Provided are a semiconductor device having a superlattice semiconductor layer and a method of fabricating the same. The semiconductor device includes a superlattice semiconductor layer in which first material layers and second material layers formed of different materials are alternately stacked. A plurality holes are formed in the first material layers and the second material layers forming a superlattice structure, and the holes are filled with materials of the adjacent material layers. The provided superlattice structure reduces a driving voltage by transferring charges through the holes in the first material layers and the second material layers while maintaining a predetermined optical confinement characteristic.

Abstract: A method and apparatus for use in manufacturing a semiconductor device strips a polysilicon hard mask without damaging the layer left exposed by openings formed by using the polysilicon hard mask as an etching mask. The method includes forming a polysilicon hard mask in a pattern on a first layer to expose a portion of the first layer, dry etching the exposed portion of the first layer using the polysilicon hard mask as an etching mask to form an opening in the first layer, and thereafter removing the polysilicon hard mask by supplying an etching gas onto the polysilicon hard mask in a direction parallel to the major surface of the semiconductor substrate.

Abstract: A memory charging circuit includes a read charge control circuit controlled according to a read control signal and an address value. A write charge control circuit is controlled according to a write control signal and the same or a different address value. Charging to and charging from the same data IO lines is controlled using the read charge amplifier circuit and the write charge amplifier circuit. A column select line circuit can be configured into a first arrangement where a first output is activated according to a read control signal and an address and a second output is activated according to a write control signal and the same or a different address. In a second arrangement, the first output is activated according to an address and either the read control signal or the write control signal.

Abstract: A semiconductor light emitting device including means for reducing strain and carrier overflow caused by injection of a number of carriers in semiconductor light emitting devices using GaN is provided. The semiconductor light emitting device includes a multi-quantum barrier formed by depositing an AlGaN/GaN double layer a predetermined number of times, or a strain-compensating multiple quantum barrier formed at either the upper or lower sides of an active layer by depositing an AlGaN/InGaN double layer a predetermined number of times, and does not need a p-type clad layer.

Abstract: A method and apparatus for use in manufacturing a semiconductor device strips a polysilicon hard mask without damaging the layer left exposed by openings formed by using the polysilicon hard mask as an etching mask. The method includes forming a polysilicon hard mask in a pattern on a first layer to expose a portion of the first layer, dry etching the exposed portion of the first layer using the polysilicon hard mask as an etching mask to form an opening in the first layer, and thereafter removing the polysilicon hard mask by supplying an etching gas onto the polysilicon hard mask in a direction parallel to the major surface of the semiconductor substrate.

Abstract: An apparatus for converting signals in a mobile communication system allows a second generation system to perform an IPC test for a third generation system or the third generation to perform the IPC test for the second generation system by communicating between the second generation system and the third generation system.

Abstract: A variable gain, low noise amplifier is described, which is suitable as the input amplifier for a wireless terminal, or as the pre-amplifier stage of a wireless terminal transmitter. The amplifier may achieve variable gain by deploying a network of transistors in a parallel array, each independently selectable by a PMOS switch, and providing the variable resistance for the resonant circuit. Power dissipation can also be mitigated by using a network of driving transistors, each independently selectable by a PMOS switch. The resonant frequency of the amplifier may be made tunable by providing a selection of optional pull-up capacitors.

Abstract: A memory charging circuit includes a read charge control circuit controlled according to a read control signal and an address value. A write charge control circuit is controlled according to a write control signal and the same or a different address value. Charging to and charging from the same data IO lines is controlled using the read charge amplifier circuit and the write charge amplifier circuit. A column select line circuit can be configured into a first arrangement where a first output is activated according to a read control signal and an address and a second output is activated according to a write control signal and the same or a different address. In a second arrangement, the first output is activated according to an address and either the read control signal or the write control signal.

Abstract: A drying unit and method of drying for a liquid electrophotographic printing apparatus, the drying unit that is equipped in the printing apparatus comprising a developing unit that develops an image on an photosensitive medium using a liquid carrier as a mediator and a transfer unit that transcribes the developed image on a printing paper, so that the liquid carrier remaining on the photosensitive medium can be dried. The drying unit for the liquid electrophotographic printing apparatus is positioned near the photosensitive medium and includes a manifold having an inlet and an outlet; an inlet-outlet channel being between the inlet and the outlet and connecting them; a gas flowing unit by which the gas in the manifold is discharged through the outlet and gas flows in the manifold through the inlet; a condenser that condenses the evaporated carrier discharged through the outlet; and a heater that heats the gases flowing in the manifold through the inlet.

Abstract: The present invention discloses a circuit having a make-link type fuse. The circuit comprising a first make-link type fuse connected between a gate of a transistor and a first supply voltage.

Abstract: An LCD module uses a flexible printed circuit (FPC) instead of a gate or a source drive printed circuit board (PCB) so that size of area by which a tape carrier package (TCP) is thermocompression molded can be substantially decreased and thus reducing a difference in the degree of thermal expansion between PCB and TCP. As a result, a slim and lightweight LCD module can be obtained, and a misalignment or a warpage of TCP can be prevented.

Abstract: A memory charging circuit includes a read charge control circuit controlled according to a read control signal and an address value. A write charge control circuit is controlled according to a write control signal and the same or a different address value. Charging to and charging from the same data IO lines is controlled using the read charge amplifier circuit and the write charge amplifier circuit. A column select line circuit can be configured into a first arrangement where a first output is activated according to a read control signal and an address and a second output is activated according to a write control signal and the same or a different address. In a second arrangement, the first output is activated according to an address and either the read control signal or the write control signal.

Abstract: A memory charging circuit includes a read charge control circuit controlled according to a read control signal and an address value. A write charge control circuit is controlled according to a write control signal and the same or a different address value. Charging to and charging from the same data IO lines is controlled using the read charge amplifier circuit and the write charge amplifier circuit. A column select line circuit can be configured into a first arrangement where a first output is activated according to a read control signal and an address and a second output is activated according to a write control signal and the same or a different address. In a second arrangement, the first output is activated according to an address and either the read control signal or the write control signal.

Abstract: A method of manufacturing a semiconductor substrate is provided. The method includes a first step of forming a rugged portion in a GaN substrate, and a second step of forming a GaN thin film on the GaN substrate at a lateral growth rate fast enough to cover the GaN thin film vertically grown with the GaN thin film laterally grown, so that the rugged portion is covered with the GaN thin film.

Abstract: A variable gain, low noise amplifier is described, which is suitable as the input amplifier for a wireless terminal, or as the pre-amplifier stage of a wireless terminal transmitter. The amplifier may achieve variable gain by deploying a network of transistors in a parallel array, each independently selectable by a PMOS switch, and providing the variable resistance for the resonant circuit. Power dissipation can also be mitigated by using a network of driving transistors, each independently selectable by a PMOS switch. The resonant frequency of the amplifier may be made tunable by providing a selection of optional pull-up capacitors.