Abstract: An ultrasonic probe that acquires an ultrasonic image to diagnose or treat an object, and an ultrasonic imaging apparatus including the same, wherein the ultrasonic probe includes a case, a transducer disposed inside the case to generate ultrasonic waves, a biopsy needle inserted into an object in the vicinity of the case, and a sensor unit including a sensor provided to measure a position of the biopsy needle and disposed inside the transducer, wherein the transducer includes a piezoelectric layer configured to generate ultrasonic waves, a sound absorbing layer disposed on one side of the piezoelectric layer to absorb the ultrasonic waves generated from the piezoelectric layer, and a sound absorbing member disposed on one side of the sound absorbing layer, and the sensor unit is disposed inside the sound absorbing member.

Abstract: Provided are titanium oxynitride having a titanium deficiency-type halite structure (Ti1-xO1-yNy, wherein x and y are real numbers), in which x representing a deficiency degree of titanium is greater than 0 and less than 1, and y representing an introduction degree of nitrogen is greater than 0 and less than 1, and a method of preparing the same. The titanium oxynitride having the titanium deficiency-type halite structure with an improved photocatalyst property in the visible wavelength region may be provided.

Abstract: Provided are titanium oxynitride having a titanium deficiency-type halite structure (Ti1-xO1-yNy, wherein x and y are real numbers), in which x representing a deficiency degree of titanium is greater than 0 and less than 1, and y representing an introduction degree of nitrogen is greater than 0 and less than 1, and a method of preparing the same. The titanium oxynitride having the titanium deficiency-type halite structure with an improved photocatalyst property in the visible wavelength region may be provided.

Abstract: The present invention relates to polycrystalline gallium-doped zinc oxide of which the power factor is improved due to increased gallium doping of same. Despite having a high carrier concentration, the Seebeck coefficient of Zn0.985Ga0.015O is higher than that of Zn0.990Ga0.010O, and this arises because of the effect of the density-of-states (DOS) effective mass. A steady increase in compression stress following gallium substitution occurs in the base portion of the conduction band DOS. The solubility limit of gallium in the zinc oxide matrix is increased because a low firing temperature accelerates chemical compression. Single phase n-type Zn0.985Ga0.015O exhibits a power factor of 12.5 ?Wcm?1K?2.