Patents by Inventor Won-Shik Shin

Won-Shik Shin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • POWER TRANSACTION SYSTEM AND TRANSACTION METHOD OF DISTRIBUTED POWER
    Publication number: 20120205977
    Abstract: Provided are a CDI electrode and a method for manufacturing a module using the same. A hybridized electrode manufactured by the manufacturing method of the present invention can manufacture a CDI electrode capable of increasing adsorption efficiency and rate of ions and selectively adsorbing cation and anion, thereby simply and inexpensively manufacturing the CDI electrode module without using a cation-exchange membrane and an anion-exchange membrane.
    Type: Application
    Filed: December 23, 2009
    Publication date: August 16, 2012
    Applicant: ILJIN ELECTRIC CO., LTD.
    Inventors: Won Shik Shin, Hakcheol Kim, Yongdae Kim, Gwinam Park
  • Etch stop structure and method of manufacture, and semiconductor device and method of manufacture
    Patent number: 7741222
    Abstract: An etch stop layer is formed over a first structure by depositing a metal oxide material over the first structure and annealing the deposited metal oxide material. A second structure is formed over the etch stop layer, and a formation is etched through the second structure using the etch stop layer as an etch stop.
    Type: Grant
    Filed: April 11, 2005
    Date of Patent: June 22, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-Sub You, Jae-Young Park, Won-Shik Shin, Hyeon-Deok Lee, Ki-Vin Im, Seok-Woo Nam, Hun-Young Lim, Won-Jun Jang, Yong-Woo Hyung
  • Etch stop structure and method of manufacture, and semiconductor device and method of manufacture
    Publication number: 20060084275
    Abstract: An etch stop layer is formed over a first structure by depositing a metal oxide material over the first structure and annealing the deposited metal oxide material. A second structure is formed over the etch stop layer, and a formation is etched through the second structure using the etch stop layer as an etch stop.
    Type: Application
    Filed: April 11, 2005
    Publication date: April 20, 2006
    Inventors: Young-Sub You, Jae-Young Park, Won-Shik Shin, Hyeon-Deok Lee, Ki-Vin Im, Seok-Woo Nam, Hun-Young Lim, Won-Jun Jang, Yong-Woo Hyung