Patents by Inventor Won-suek Cho

Won-suek Cho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6815275
    Abstract: A method of fabricating an integrated circuit device comprises forming a refractory metal layer on a silicon-containing substrate, processing the refractory metal layer to form an amorphous metal silicide layer, and depositing an insulating material on the amorphous metal silicide layer. The insulating material is deposited at a temperature that maintains at least a portion of the amorphous metal silicide layer in an amorphous state, to form a capping structure that contains the amorphous metal silicide layer. The method further includes crystallizing the contained amorphous metal silicide layer, and forming an etching stop layer on the capping structure.
    Type: Grant
    Filed: September 27, 2002
    Date of Patent: November 9, 2004
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyung-shin Kwon, Won-suek Cho, Byung-jun Hwang
  • Publication number: 20030092228
    Abstract: A method of fabricating an integrated circuit device comprises forming a refractory metal layer on a silicon-containing substrate, processing the refractory metal layer to form an amorphous metal suicide layer, and depositing an insulating material on the amorphous metal silicide layer. The insulating material is deposited at a temperature that maintains at least a portion of the amorphous metal silicide layer in an amorphous state, to form a capping structure that contains the amorphous metal silicide layer. The method further includes crystallizing the contained amorphous metal silicide layer, and forming an etching stop layer on the capping structure.
    Type: Application
    Filed: September 27, 2002
    Publication date: May 15, 2003
    Inventors: Hyung-Shin Kwon, Won-Suek Cho, Byung-Jun Hwang