Abstract: A flexible display device including a substrate, a light emitting layer, a first insulating layer, and a conductive layer. The substrate includes a bent region and a non-bent region. The light emitting layer overlaps the non-bent region. The first insulating layer is disposed on the substrate. The conductive layer is disposed on the first insulating layer. A sidewall of the first insulating layer includes a first tapered surface. The first tapered surface includes at least three curved surface portions continuously arranged with one another.

Abstract: A semiconductor system includes a first semiconductor apparatus and a second semiconductor apparatus. The first semiconductor apparatus transmits a command signal during a command cycle and transmits an address signal during an address cycle. The first semiconductor apparatus transmits a selection signal during a LUN selection cycle before the command cycle. The second semiconductor apparatus performs a data input/output operation based on the selection signal, the command signal, and the address signal.

Abstract: A semiconductor system includes a first semiconductor apparatus and a second semiconductor apparatus. The first semiconductor apparatus provides the second semiconductor apparatus with a chip enable signal and a command address signal set, and the second semiconductor apparatus performs an internal operation based on the chip enable signal and the command address signal set. The first semiconductor apparatus provides the second semiconductor apparatus with a selection chip enable command, and the second semiconductor apparatus transmits data to the first semiconductor apparatus or receives the data from the first memory device after receiving the selection chip enable command.

Abstract: A semiconductor memory device includes a storage, a buffer, and a control logic. The storage stores a first algorithm data. The buffer stores a second algorithm data that is at least partially different from the first algorithm data. The control logic is configured to selectively receive the first algorithm data and the second algorithm data.

Abstract: A semiconductor memory device includes a storage, a buffer, and a control logic. The storage stores a first algorithm data. The buffer stores a second algorithm data that is at least partially different from the first algorithm data. The control logic is configured to selectively receive the first algorithm data and the second algorithm data.

Abstract: The memory device includes: an independent circuit configured to output an independent signal; a memory cell array formed on a top of the independent circuit, the memory cell array including a plurality of memory cells in which data is stored; a revision circuit formed on a top of the memory cell array, the revision circuit storing modified ROM data different from the independent signal, the revision circuit outputting a ROM control signal and the modified ROM data in response to a select signal when an error occurs in the independent signal in a test operation of the independent circuit formed under the memory cell array; and a selection circuit configured to output the independent signal or the modified ROM data in response to the ROM control signal.

Abstract: The memory device includes: an independent circuit configured to output an independent signal; a memory cell array formed on a top of the independent circuit, the memory cell array including a plurality of memory cells in which data is stored; a revision circuit formed on a top of the memory cell array, the revision circuit storing modified ROM data different from the independent signal, the revision circuit outputting a ROM control signal and the modified ROM data in response to a select signal when an error occurs in the independent signal in a test operation of the independent circuit formed under the memory cell array; and a selection circuit configured to output the independent signal or the modified ROM data in response to the ROM control signal.

Abstract: Provided herein is a semiconductor memory device. The semiconductor memory device includes: a memory cell array including a plurality of memory blocks; a voltage generation circuit configured to generate a plurality of operating voltages; a decoder circuit configured to transmit the plurality of operating voltages to the memory cell array in response to a serial data signal that is sequentially inputted; and a control logic configured to generate the data signal, internal address signals and an internal clock signal in response to a command.

Abstract: In one aspect of the present disclosure, there is provided a memory system comprising a memory device configured to temporarily store data therein, the data being loaded thereon for programming a selected page among multiple pages, the memory device further configured to program the selected page using the data; and a controller configured to send the data to the memory device, wherein the controller is further configured to control the memory device such that, in a failure event of the program for the selected page, the memory device re-programs another page using the data temporarily stored therein without receipt of further data from the controller.

Abstract: A memory system in accordance with an embodiment may include a memory chip and a controller. The memory chip may store data in a plurality of logical pages by performing a sensing operation on a selected page in response to commands and performing an output operation of the data. The controller may transmit the commands to the memory chip so that a part of the sensing operation and a part of the output operation are simultaneously performed.

Abstract: Provided herein is a semiconductor memory device. The semiconductor memory device includes: a memory cell array including a plurality of memory blocks; a voltage generation circuit configured to generate a plurality of operating voltages; a decoder circuit configured to transmit the plurality of operating voltages to the memory cell array in response to a serial data signal that is sequentially inputted; and a control logic configured to generate the data signal, internal address signals and an internal clock signal in response to a command.

Abstract: A memory system in accordance with an embodiment may include a memory chip and a controller. The memory chip may store data in a plurality of logical pages by performing a sensing operation on a selected page in response to commands and performing an output operation of the data. The controller may transmit the commands to the memory chip so that a part of the sensing operation and a part of the output operation are simultaneously performed.

Abstract: In one aspect of the present disclosure, there is provided a memory system comprising a memory device configured to temporarily store data therein, the data being loaded thereon for programming a selected page among multiple pages, the memory device further configured to program the selected page using the data; and a controller configured to send the data to the memory device, wherein the controller is further configured to control the memory device such that, in a failure event of the program for the selected page the memory device re-programs another page using the data temporarily stored therein without receipt of further data from the controllers

Abstract: A semiconductor memory device may include: a memory cell array comprising a plurality of memory cells coupled to a plurality of bit line pairs and a plurality of word lines; and an operation circuit suitable for setting a parameter corresponding to an input command, and performing an operation corresponding to the input command on the memory cell array based on the set parameter, wherein, when the input command is of the same type as a previous input command, the operation circuit skips setting the parameter for each of preset word line groups.

Abstract: An integrated circuit includes a first signal generation unit suitable for generating a first enable signal which is activated during an initial setting period; a second signal generation unit suitable for generating a second enable signal which is activated in response to a command for performing a preset operation, after the initial setting period; and a temperature code generation unit suitable for generating temperature codes in response to activation of the first and second enable signals.

Abstract: The semiconductor memory device includes a memory cell array including guarantee blocks, normal blocks, and redundancy blocks. A bad block address indicates which block from the guarantee blocks and the normal blocks is defective, and an indication information indicates whether the bad block address belongs to the guarantee blocks or to the normal blocks. A request block address is supplied together with associated block type information. The block type information indicates whether the request block address belongs to the guarantee blocks or to the normal blocks. A match signal is enabled when the block type information matches the indication information, and the request block address matches the bad block address. The enablement of the match signal allows the defective block to be replaced with one block from the redundancy blocks.

Abstract: An integrated circuit includes a first signal generation unit suitable for generating a first enable signal which is activated during an initial setting period; a second signal generation unit suitable for generating a second enable signal which is activated in response to a command for performing a preset operation, after the initial setting period; and a temperature code generation unit suitable for generating temperature codes in response to activation of the first and second enable signals.

Abstract: Disclosed are a semiconductor memory device and a method of checking an operation state thereof. The semiconductor memory device includes: a micro configured to output a data generating code according to a state checking operation command; and a step code generating unit configured to generate a step code for an operation currently performed by a storage device according to the data generating code, and output ROM data including the step code, in which the micro generates a state code for the operation currently performed by the storage device and an operation code for a segmentalized step of the operation according to the ROM data.

Abstract: A memory system including a plurality of memory chips is provided. The memory system includes a first memory chip and a second memory chip that share a data bus and become active by a chip enable signal, and a controller transmitting multi chip select commands to the first and second memory chips. The first memory chip, in response to the first multichip select command, receives a first operation request transmitted by the controller through the data base, and the second memory chip, in response to the second multichip select command, receives a second operation request transmitted by the controller through the data bus before the first memory chip operates according to the first operation request.

Abstract: A memory system including a plurality of memory chips is provided. The memory system includes a first memory chip and a second memory chip that share a data bus and become active by a chip enable signal, and a controller transmitting multi chip select commands to the first and second memory chips. The first memory chip, in response to the first multichip select command, receives a first operation request transmitted by the controller through the data base, and the second memory chip, in response to the second multichip select command, receives a second operation request transmitted by the controller through the data bus before the first memory chip operates according to the first operation request.