Abstract: A plasma accelerating apparatus and a plasma processing system having the same are provided. The apparatus includes a channel comprising an inner wall, an outer wall spaced apart from the inner wall by a distance for encircling the inner wall, and an end wall connected to an end of the inner wall and the outer wall to form an outlet port at the other ends of the walls; a gas supply portion to supply a gas to an inside of the channel; and a plasma generating and accelerating portion to supply ionization energy to the gas to generate a plasma beam and to accelerate the generated plasma beam toward the outlet port, wherein a coating layer comprising a first layer composed of a carbon nano tube is formed on at least one of the inner wall, the outer wall, and the end wall of the channel.

Abstract: In a semiconductor memory device and a method of fabricating the same, a semiconductor memory device having a transistor and a data storing portion includes a heating portion interposed between the transistor and the data storing portion and a metal interconnection layer connected to the data storing portion, wherein the data storing portion includes a chalcogenide material layer, which undergoes a phase change due to a heating of the heating portion, for storing data therein.

Abstract: A heating structure of an inkjet printhead and an inkjet printhead including the heating structure. The heating structure includes a substrate, a heater formed on the substrate, an electrode formed on the heater, a passivation layer formed to cover the heaters and the electrodes, and carbon nanotubes (CNTs) formed in the passivation layer.

Abstract: In a semiconductor memory device and a method of fabricating the same, a semiconductor memory device having a transistor and a data storing portion includes a heating portion interposed between the transistor and the data storing portion and a metal interconnection layer connected to the data storing portion, wherein the data storing portion includes a chalcogenide material layer, which undergoes a phase change due to a heating of the heating portion, for storing data therein.

Abstract: An organic electro-luminescence display apparatus and an organic thin film transistor for the same include: a first electrode-layer supplying holes; a second electrode layer supplying electrons; an organic thin film layer disposed between the first electrode layer and the second electrode layer, the organic thin film layer emits light through the recombination of the holes and the electrons; and a sealing protection layer insulating at least the second electrode layer and the organic thin film layer from an external gas, wherein the sealing protection layer includes at least a LaF3 layer. Since the penetration of harmful materials such as moisture or oxygen is prevented, the organic electro-luminescence display apparatus can provide constant performance. In addition, since an additional sealing structure is not required, the organic electro-luminescence display apparatus is lighter, thinner, and less costly to manufacture.

Abstract: A plasma accelerating apparatus and a plasma processing system, which efficiently elevate a drift velocity of a plasma beam and are simple to manufacture and simple in construction. A channel includes an outlet port opening at an end of the channel. A gas supply portion supplies a gas in the channel. A plasma generator provides ionization energy to the gas in the channel to generate a plasma beam. A plasma accelerating portion includes a plurality of grids transversely arranged spaced apart from each other by a predetermined distance in the channel for accelerating the plasma beam generated by the plasma generator to the outlet port of the channel with an electric field. The plasma accelerating apparatus and the plasma processing system elevate a drift velocity of the plasma beam more efficiently than conventional accelerating apparatuses that use an electromagnetic force induced by a magnetic field and a secondary current.

Abstract: A plasma accelerating apparatus and a plasma processing system having the same are provided. The apparatus includes a channel comprising an inner wall, an outer wall spaced apart from the inner wall by a distance for encircling the inner wall, and an end wall connected to an end of the inner wall and the outer wall to form an outlet port at the other ends of the walls; a gas supply portion to supply a gas to an inside of the channel; and a plasma generating and accelerating portion to supply ionization energy to the gas to generate a plasma beam and to accelerate the generated plasma beam toward the outlet port, wherein a coating layer comprising a first layer composed of a carbon nano tube is formed on at least one of the inner wall, the outer wall, and the end wall of the channel.

Abstract: A neutral beam etching device for separating and accelerating a plasma is provided. The device includes a first chamber having a first opening formed at one side thereof; a second chamber having a second opening formed at one side thereof and being disposed inside the first chamber to form a plasma generation area; a first channel fluidly communicating the first opening with the plasma generation area; a second channel fluidly communicating the second opening with the plasma generation area; a coil disposed on an outer surface of the first chamber and which generates a magnetic field to generate a plasma in the plasma generation area; and an acceleration part disposed within the first and second chambers and configured to separate the plasma into a positive ion and an electron, accelerate the positive ion and the electron, and discharge the positive ion and electron through the first and the second channels.

Abstract: Provided are a semiconductor memory device and a method of fabricating the same. The semiconductor memory device includes a heating portion interposed between a transistor and a data storing portion, and a metal interconnection layer connected to the data storing portion. The data storing portion includes a chalcogenide material layer which undergoes a phase change due to heating of the heating portion to store data therein. The heating material layer is disposed under the chalcogenide material layer, and the top surface of the heating material layer is oxidized using a plasma oxidation process to increase a resistance value. Accordingly, the heat capacity necessary for the chalcogenide material layer can be transmitted using a small amount of current, and current used in the semiconductor memory device can be further reduced.

Abstract: In a semiconductor memory device and a method of fabricating the same, a semiconductor memory device having a transistor and a data storing portion includes a heating portion interposed between the transistor and the data storing portion and a metal interconnection layer connected to the data storing portion, wherein the data storing portion includes a chalcogenide material layer, which undergoes a phase change due to a heating of the heating portion, for storing data therein.

Abstract: In a plasma display panel, front and rear substrates are arranged separated a predetermined distance from each other and to face each other, forming a discharge space. A plurality of first electrodes are formed on an inner surface of the rear substrate. A first dielectric layer is formed on the inner surface of the rear substrate to cover the first electrodes. A plurality of barrier ribs are formed between the first electrodes on the inner surface of the rear substrate, sectioning the discharge space. A fluorescent substance layer is formed on a surface of the first dielectric layer and side surfaces of the barrier ribs. A first protective film formed on the surface of the first fluorescent layer. A plurality of second electrodes are formed corresponding to the first electrodes on an inner surface of the front substrate. A second dielectric layer formed on the inner surface of the front substrate to cover the second electrodes. A second fluorescent layer formed on the surface of the second dielectric layer.

Abstract: A signal coupling apparatus for communication by a medium voltage power line comprises a housing with an inner cavity; an electrode formed on one edge of the housing, one end of the electrode connected to an external medium voltage lead line; a coupling capacitor formed within the cavity and connected to the other end of the electrode; a drain coil formed within the cavity and connected to the coupling capacitor; a power-sided ground terminal formed on one edge of the housing, one end of the ground terminal connected to the drain coil and the other end of the ground terminal connected to a ground terminal of a power system; and a communication-sided connection terminal formed on one edge of the housing, one end of the connection terminal connected to the coupling capacitor and the other end of the connection terminal connected to an external communication equipment.

Abstract: A signal coupling apparatus for communication by a medium voltage power line comprises a housing with an inner cavity; an electrode formed on one edge of the housing, one end of the electrode connected to an external medium voltage lead line; a coupling capacitor formed within the cavity and connected to the other end of the electrode; a drain coil formed within the cavity and connected to the coupling capacitor; a power-sided ground terminal formed on one edge of the housing, one end of the ground terminal connected to the drain coil and the other end of the ground terminal connected to a ground terminal of a power system; and a communication-sided connection terminal formed on one edge of the housing, one end of the connection terminal connected to the coupling capacitor and the other end of the connection terminal connected to an external communication equipment.

Abstract: In a plasma display panel, front and rear substrates are arranged separated a predetermined distance from each other and to face each other, forming a discharge space. A plurality of first electrodes are formed on an inner surface of the rear substrate. A first dielectric layer is formed on the inner surface of the rear substrate to cover the first electrodes. A plurality of barrier ribs are formed between the first electrodes on the inner surface of the rear substrate, sectioning the discharge space. A fluorescent substance layer is formed on a surface of the first dielectric layer and side surfaces of the barrier ribs. A first protective film formed on the surface of the first fluorescent layer. A plurality of second electrodes are formed corresponding to the first electrodes on an inner surface of the front substrate. A second dielectric layer formed on the inner surface of the front substrate to cover the second electrodes. A second fluorescent layer formed on the surface of the second dielectric layer.

Abstract: A plasma display panel using excimer gas is provided. Mixed excimer gases containing xenon (Xe) used to form excimer gas and iodine (I) as a halogen, are injected into the plasma display panel to be used as discharge gases. At least one selected from helium (He), neon (Ne), argon (Ar) and krypton (Kr) can be used as a buffering gas for the discharging gases. At least some of ultraviolet rays originate from the excimer gases and at least some of iodine is supplied from I2. The partial pressure of molecular iodine is less than or equal to a saturated vapor pressure, at operating temperature of the plasma display panel, at room temperature and at 0° C., respectively. The partial pressure of iodine inside the plasma display panel is in the range of 0.01 to 50% based on the total pressure of excimer gases.

Abstract: A plasma display panel using excimer gas is provided. Mixed excimer gases containing xenon (Xe) used to form excimer gas and iodine (I) as a halogen, are injected into the plasma display panel to be used as discharge gases. At least one selected from helium (He), neon (Ne), argon (Ar) and krypton (Kr) can be used as a buffering gas for the discharging gases. At least some of ultraviolet rays originate from the excimer gases and at least some of iodine is supplied from I2. The partial pressure of molecular iodine is less than or equal to a saturated vapor pressure, at operating temperature of the plasma display panel, at room temperature and at 0° C., respectively. The partial pressure of iodine inside the plasma display panel is in the range of 0.01 to 50% based on the total pressure of excimer gases.

Abstract: The present invention discloses a plasma display panel. The disclosed panel comprises front and rear substrates that face each other with a certain distance apart, and on the facing sides of the front and rear substrates, a plurality of first and second electrodes are formed. On the first electrodes and the rear substrate a first dielectric layer is formed, between the first electrodes on the first dielectric layer barrier ribs are formed with a predetermined height, and on the sides of the barrier ribs and on the upper side of the first dielectric layer a fluorescent layer is coated. Over the second electrodes and the front substrate a second dielectric layer with an energy band gap of 6 eV or more and a dielectric constant of less than 10 is formed.

Abstract: A secondary electron amplification structure employing carbon nanotube and a plasma display panel and back light using the same are provided. The secondary electron amplification structure is formed by stacking a MgO film, a film of a fluoride such as MgF2, CaF2 or LiF, or a film of an oxide such as Al2O3, ZnO, CaO, SrO, SiO2 or La2O3 on a carbon nanotube (CNT), which functions to increase the secondary electron emission coefficient caused by electrons or ions.

Abstract: A plasma display panel (PDP) and a method for manufacturing the same are provided. The plasma display panel (PDP) includes a front substrate and a rear substrate which face each other, upper electrodes and lower electrodes formed on the facing surfaces of the front substrate and the rear substrate in strips to cross each other, a dielectric layer for covering the upper and lower electrodes, barrier ribs formed on the dielectric layer of the rear substrate so that discharge cell is divided, a MgO protective layer deposited on the dielectric layer of the front substrate, and a LaF3 thin film deposited on the MgO protective layer. The LaF3 is deposited by an electron beam vapor deposition method.