Patents by Inventor Won Taeg Lim

Won Taeg Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Near-ultraviolet light-emitting semiconductor light-emitting element and group III nitride semiconductor template used therefor
    Patent number: 11264538
    Abstract: Disclosed is a Group III nitride semiconductor template for a 300-400 nm near-ultraviolet light emitting semiconductor device, the template including: a growth substrate; a nucleation layer based on AlxGa1-xN (0<x?1, x>y); and a monocrystalline Group III nitride semiconductor layer based on AlyGa1-yN (y>0), and a near-ultraviolet light emitting semiconductor device using the template.
    Type: Grant
    Filed: December 28, 2018
    Date of Patent: March 1, 2022
    Assignee: Soft-Epi Inc.
    Inventors: Sung Min Hwang, In Sung Cho, Won Taeg Lim, Doo Soo Kim
  • Near-Ultraviolet Light-Emitting Semiconductor Light-Emitting Element And Group III Nitride Semiconductor Template Used Therefor
    Publication number: 20200058827
    Abstract: Disclosed is a Group III nitride semiconductor template for a 300-400 nm near-ultraviolet light emitting semiconductor device, the template including: a growth substrate; a nucleation layer based on AlxGa1-xN (0<x?1, x>y); and a monocrystalline Group III nitride semiconductor layer based on AlyGa1-yN (y>0), and a near-ultraviolet light emitting semiconductor device using the template.
    Type: Application
    Filed: February 10, 2017
    Publication date: February 20, 2020
    Inventors: Sung Min HWANG, In Sung CHO, Won Taeg LIM, Doo Soo KIM
  • NEAR-ULTRAVIOLET LIGHT-EMITTING SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND GROUP III NITRIDE SEMICONDUCTOR TEMPLATE USED THEREFOR
    Publication number: 20190140140
    Abstract: Disclosed is a Group III nitride semiconductor template for a 300-400 nm near-ultraviolet light emitting semiconductor device, the template including: a growth substrate; a nucleation layer based on AlxGa1-xN (0<x?1, x>y); and a monocrystalline Group III nitride semiconductor layer based on AlyGa1-yN (y>0), and a near-ultraviolet light emitting semiconductor device using the template.
    Type: Application
    Filed: December 28, 2018
    Publication date: May 9, 2019
    Inventors: Sung Min HWANG, In Sung CHO, Won Taeg LIM, Doo Soo KIM
  • Semiconductor laser device and manufacturing method thereof
    Patent number: 6888868
    Abstract: Disclosed is a semiconductor laser device and manufacturing method thereof in which light absorption in a facet decreases and stable high power laser beam is generated. The semiconductor laser device having a stack structure in which a lower clad layer, an active layer, an upper clad layer, a current blocking layer, and a cap layer are sequentially formed, the semiconductor laser device includes: a Zn diffusion source layer on a facet of the stack structure; and a window layer between the Zn diffusion source layer and the stack structure, for preventing light absorption.
    Type: Grant
    Filed: December 9, 2002
    Date of Patent: May 3, 2005
    Assignee: LG Electronics Inc.
    Inventors: Won Taeg Lim, Shi Jong Leem
  • Semiconductor laser device and manufacturing method thereof
    Publication number: 20030118070
    Abstract: Disclosed is a semiconductor laser device and manufacturing method thereof in which light absorption in a facet decreases and stable high power laser beam is generated. The semiconductor laser device having a stack structure in which a lower clad layer, an active layer, an upper clad layer, a current blocking layer, and a cap layer are sequentially formed, the semiconductor laser device includes: a Zn diffusion source layer on a facet of the stack structure; and a window layer between the Zn diffusion source layer and the stack structure, for preventing light absorption.
    Type: Application
    Filed: December 9, 2002
    Publication date: June 26, 2003
    Applicant: LG Electronics Inc.
    Inventors: Won Taeg Lim, Shi Jong Leem