Abstract: The present disclosures described herein pertain generally to a method and an apparatus for preparing a graphene by using near-infrared light.

Abstract: Isolated semiconductor devices are formed by forming field oxide regions in a face of a semiconductor substrate to define active regions therebetween. The field oxide regions extend to above the substrate face and include an oblique surface which extends from above the substrate face to the substrate face. A step reducing region is formed on a respective one of the oblique surfaces of the field oxide regions, extending onto the active regions at the substrate face. The step reducing region can reduce the steepness of the step between the substrate face and the field oxide regions, thereby facilitating further processing and reliability of the semiconductor devices.

Abstract: Methods of forming semiconductor devices containing field oxide and channel-stop isolation regions therein include the steps of forming a plurality of first channel-stop isolation regions by implanting first conductivity type impurities at a first dose level into a face of a semiconductor substrate and then forming respective field oxide isolation regions at the locations where the first channel-stop isolation regions have been implanted. A conductive layer, which contacts active regions of the substrate and covers the field oxide isolation regions, is then patterned over the field oxide isolation regions to expose central portions of the upper surfaces of the field oxide isolation regions.

Abstract: A power assistance steering system for use in a vehicle comprises a restricting mechanism including a cylindrical reaction piston having a reaction surface on which said reaction pressure is applied in order to cause said reaction piston to be biased downwardly, and at least one reversed V-shaped depression formed on a bottom skirt, the cylindrical reaction piston adapted to be held on the input shaft in such a way that said reaction piston can longitudinally and slidably reciprocate with respect to the input shaft, while circumferentially locked to the input shaft, and at least one semi-spherical protrusion formed on a middle end surface of said output shaft so as to be retained within the reversed V-shaped depression.

Abstract: According to the present invention, the incomplete silicon exposure is prevented by the sufficient overetching after the formation of an etching-stop layer on an oxide layer for protecting a conductive layer from the damage of the protective oxide layer when the self-aligned contact window is formed. Therefore, the thickness of the protective oxide layer can be minimized, and the bend of the chip can be improved whereby the following process will be accomplished easily.

Abstract: A method of manufacturing folded capacitors comprises the steps of: forming a first storage electrode and a first insulating layer; forming a first plate electrode and a second insulating layer thereon and forming a pad poly thereon; limiting the first plate electrode to a predetermined portion; leaving a spacer; forming a second storage electrode; and depositing a third insulating layer and a second plate electrode thereon. It is possible to manufacture a capacitor with a large capacitance and to simplify the manufacturing processes of the capacitor by using the conventional capacitor manufacturing processes. The folded capacitors with a larger capacitance per unit area can be obtained without making the insulating layer be thinned even if the plane area of the capacitor may be reduced remarkably according to a tendency to high integration density.