Patents by Inventor Won Woo Jang

Won Woo Jang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10810919
    Abstract: An image shift control method including generating image position information by using sample data of first image data; and determining a movement direction and a movement amount of an image by using the image position information.
    Type: Grant
    Filed: August 16, 2019
    Date of Patent: October 20, 2020
    Assignee: Samsung Display Co., Ltd.
    Inventors: Byung Ki Chun, Hyun Seuk Yoo, Jun Gyu Lee, Won Woo Jang, Yong Seok Choi
  • Patent number: 10804316
    Abstract: A light emitting diode array is provide to include: a substrate; light emitting diodes positioned over the substrate, each including a first semiconductor layer, an active layer, and a second semiconductor layer, wherein each light emitting diode is disposed to form a first via hole structure exposing a portion of the corresponding first semiconductor layer; lower electrodes disposed over the second semiconductor layer; a first interlayer insulating layer disposed over the lower electrodes and configured to expose the portion of the first semiconductor layer of corresponding light emitting diodes; upper electrodes electrically connected to the first semiconductor layer through the first via hole structure, wherein the first via hole structure is disposed in parallel with one side of the corresponding second semiconductor layer and the first interlayer insulating layer is disposed to form a second via hole structure exposing a portion of the lower electrodes.
    Type: Grant
    Filed: December 7, 2017
    Date of Patent: October 13, 2020
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Jong Min Jang, Jong Hyeon Chae, Joon Sup Lee, Daewoong Suh, Hyun A. Kim, Won Young Roh, Min Woo Kang
  • Patent number: 10784406
    Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.
    Type: Grant
    Filed: February 5, 2020
    Date of Patent: September 22, 2020
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Jong Hyeon Chae, Joon Sup Lee, Daewoong Suh, Won Young Roh, Min Woo Kang, Jong Min Jang, Se Hee Oh, Hyun A Kim
  • Publication number: 20200295232
    Abstract: Provided are a light emitting diode (LED) in which a conductive barrier layer surrounding a reflective metal layer is defined by a protective insulating layer, and a method of manufacturing the same. A reflection pattern including a reflective metal layer and a conductive barrier layer is formed on an emission structure in which a first semiconductor layer, an active layer, and a second semiconductor layer are formed. The conductive barrier layer prevents diffusion of a reflective metal layer and extends to a protective insulating layer recessed under a photoresist pattern having an overhang structure during a forming process. Accordingly, a phenomenon where the conductive barrier layer is in contact with sidewalls of the photoresist pattern having an over-hang structure and the reflective metal layer forms points is prevented. Thus, LED modules having various shapes may be manufactured.
    Type: Application
    Filed: June 1, 2020
    Publication date: September 17, 2020
    Inventors: Jong Hyeon CHAE, Jong Min JANG, Won Young ROH, Dae Woong SUH, Min Woo KANG, Joon Sub LEE, Hyun A. KIM
  • Patent number: 10749080
    Abstract: A light emitting diode apparatus includes a substrate, a first conductive type semiconductor layer, a second conductive type semiconductor layer, a mesa, a lower insulating layer, a first pad and a second pad. The substrate has a first surface and a second surface opposite to the first surface. The first conductivity type semiconductor layer is disposed on the first surface of the substrate. The mesa is disposed on the first conductive semiconductor layer and has an active layer and the second conductive semiconductor layer. A peripheral edge of the first conductive semiconductor layer is exposed. The lower insulating layer covers the mesa and the first conductive semiconductor layer and has a plurality of first openings exposing the first conductive semiconductor layer along a peripheral edge of the substrate.
    Type: Grant
    Filed: October 22, 2019
    Date of Patent: August 18, 2020
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Jong Hyeon Chae, Joon Sup Lee, Won Young Roh, Min Woo Kang, Jong Min Jang, Hyun A Kim, Daewoong Suh
  • Publication number: 20200258936
    Abstract: A light emitting device including a substrate, first and second light emitting diodes disposed thereon and including a first semiconductor layer, an active layer, and a second semiconductor layer, a first upper electrode electrically connected to the first semiconductor layer and insulated from the second semiconductor layer of the first light emitting diode, a second upper electrode electrically connected to the first semiconductor layer and insulated from the second semiconductor layer of the second light emitting diode, in which the first and second light emitting diodes are spaced apart from each other to expose the substrate, the first upper electrode has a protrusion electrically connected to the second semiconductor layer of the second light emitting diode and covering portions of the exposed substrate, the first light emitting diode, and the second light emitting diode, and the second upper electrode has a groove.
    Type: Application
    Filed: April 24, 2020
    Publication date: August 13, 2020
    Inventors: Jong Min Jang, Jong Hyeon Chae, Joon Sup Lee, Daewoong Suh, Hyun A Kim, Won Young Roh, Min Woo Kang
  • Patent number: 10720491
    Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming an oxide film on a target layer, forming a first mask film on the oxide film, wherein the first mask film contains a semiconductor material and has a first thickness and a first etch selectivity with respect to the oxide film, forming a second mask film on the first mask film, wherein the second mask film contains a metal and has a second thickness smaller than the first thickness and a second etch selectivity larger than the first etch selectivity with respect to the oxide film, forming a second mask film pattern by patterning the second mask film, forming a first mask film pattern by patterning the first mask film, etching some portions of the oxide film by using the second mask film pattern as an etch mask film, and etching the rest of the oxide film by using the first mask film pattern as an etch mask film to form a hole, wherein the target layer is exposed via the hole.
    Type: Grant
    Filed: May 22, 2019
    Date of Patent: July 21, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jun Ho Yoon, Won Chul Lee, Sung Yeon Kim, Jae Hong Park, Chan Hoon Park, Yong Moon Jang, Je Woo Han
  • Patent number: 10692440
    Abstract: A pixel includes an organic light emitting diode (OLED), a first transistor connected to a driver and a first node, having a gate connected to a control line, a second transistor between to the first node and a second node, having a gate connected to a third node, a third transistor connected to an anode of the OLED, having a gate connected to the control line, a fourth transistor between the first node and a data line, having a gate connected to a scan line, a fifth transistor between the second and third nodes, having a gate connected to the scan line, a sixth transistor between an initializing line and the anode, having a gate connected to the scan line, a seventh transistor between the initializing line and the third node, having a gate connected to another scan line, and a storage capacitor between the driver and the third node.
    Type: Grant
    Filed: January 18, 2019
    Date of Patent: June 23, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seung Hee Kuk, Si Woo Kim, Won Seok Kim, Jung Moon Kim, Yeong Shin Jang
  • Patent number: 10693043
    Abstract: Disclosed are an LED and an LED module. The LED includes: a first conductivity type semiconductor layer; a mesa disposed over the first conductivity type semiconductor layer and including an active layer and a second conductivity type semiconductor layer; a first ohmic-contact structure in contact with the first conductivity type semiconductor layer; a second ohmic-contact structure in contact with the second conductivity type semiconductor layer; a lower insulating layer at least partially covering the mesa and the first conductivity type semiconductor layer and disposed to form a first opening part at least partially exposing the first ohmic-contact structure and a second opening part at least partially exposing the second ohmic-contact structure; and a current distributing layer connected to the first ohmic-contact structure at least partially exposed by the first opening part and disposed to form a third opening part at least partially exposing the second opening part.
    Type: Grant
    Filed: February 12, 2018
    Date of Patent: June 23, 2020
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Jong Hyeon Chae, Won Young Roh, Joon Sup Lee, Min Woo Kang, Jong Min Jang, Hyun A Kim, Seon Min Bae, Daewoong Suh
  • Publication number: 20200176636
    Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.
    Type: Application
    Filed: February 5, 2020
    Publication date: June 4, 2020
    Inventors: Jong Hyeon CHAE, Joon Sup LEE, Daewoong SUH, Won Young ROH, Min Woo KANG, Jong Min JANG, Se Hee OH, Hyun A KIM
  • Patent number: 10672952
    Abstract: Provided are a light emitting diode (LED) in which a conductive barrier layer surrounding a reflective metal layer is defined by a protective insulating layer, and a method of manufacturing the same. A reflection pattern including a reflective metal layer and a conductive barrier layer is formed on an emission structure in which a first semiconductor layer, an active layer, and a second semiconductor layer are formed. The conductive barrier layer prevents diffusion of a reflective metal layer and extends to a protective insulating layer recessed under a photoresist pattern having an overhang structure during a forming process. Accordingly, a phenomenon where the conductive barrier layer is in contact with sidewalls of the photoresist pattern having an over-hang structure and the reflective metal layer forms points is prevented. Thus, LED modules having various shapes may be manufactured.
    Type: Grant
    Filed: July 15, 2019
    Date of Patent: June 2, 2020
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Jong Hyeon Chae, Jong Min Jang, Won Young Roh, Dae Woong Suh, Min Woo Kang, Joon Sub Lee, Hyun A. Kim
  • Publication number: 20200168943
    Abstract: A flexible battery is disclosed. The flexible battery can include: an electrode assembly; and an exterior material in which the electrode assembly is encapsulated together with an electrolyte, in which the electrode assembly and the exterior material are formed such that patterns for contraction and extension in a longitudinal direction have the same directionality when the flexible battery is bent. As such, the patterns for contraction and extension in the longitudinal direction are formed on both of the exterior material and the electrode assembly, thereby preventing or minimizing deterioration in the physical properties even though the flexible battery is bent.
    Type: Application
    Filed: January 31, 2020
    Publication date: May 28, 2020
    Applicant: AMOGREENTECH CO., LTD.
    Inventors: Seung Yun RHO, Won Gil CHOI, Hyeon Woo CHO, Ju Hee JANG
  • Publication number: 20200098949
    Abstract: A light emitting diode apparatus includes a substrate, a first conductive type semiconductor layer, a second conductive type semiconductor layer, a mesa, a lower insulating layer, a first pad and a second pad. The substrate has a first surface and a second surface opposite to the first surface. The first conductivity type semiconductor layer is disposed on the first surface of the substrate. The mesa is disposed on the first conductive semiconductor layer and has an active layer and the second conductive semiconductor layer. A peripheral edge of the first conductive semiconductor layer is exposed. The lower insulating layer covers the mesa and the first conductive semiconductor layer and has a plurality of first openings exposing the first conductive semiconductor layer along a peripheral edge of the substrate.
    Type: Application
    Filed: October 22, 2019
    Publication date: March 26, 2020
    Applicant: SEOUL VIOSYS CO., LTD.
    Inventors: Jong Hyeon CHAE, Joon Sup LEE, Won Young ROH, Min Woo KANG, Jong Min JANG, Hyun A KIM, Daewoong SUH
  • Patent number: 10593990
    Abstract: Provided is a flexible battery. A flexible battery according to an exemplary embodiment of the present invention includes: an electrode assembly; and an exterior material in which the electrode assembly is encapsulated together with an electrolyte, in which the electrode assembly and the exterior material are formed such that patterns for contraction and extension in a longitudinal direction have the same directionality when the flexible battery is bent. As such, the patterns for contraction and extension in the longitudinal direction are formed on both of the exterior material and the electrode assembly, thereby preventing or minimizing deterioration in the required physical properties even though the flexible battery is bent.
    Type: Grant
    Filed: August 22, 2018
    Date of Patent: March 17, 2020
    Assignee: AMOGREENTECH CO., LTD.
    Inventors: Seung Yun Rho, Won Gil Choi, Hyeon Woo Cho, Ju Hee Jang
  • Patent number: 10573785
    Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.
    Type: Grant
    Filed: December 11, 2017
    Date of Patent: February 25, 2020
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Jong Hyeon Chae, Joon Sup Lee, Daewoong Suh, Won Young Roh, Min Woo Kang, Jong Min Jang, Se Hee Oh, Hyun A Kim
  • Publication number: 20200058252
    Abstract: A display driving circuit is provided. The display driving circuit includes: an input control circuit configured to output an input current in response to a sensing current output from at least one pixel; a sampling circuit configured to output a sampling voltage which is a reference voltage during a reset period, and which is a voltage varying based on the reference voltage and the input current during a signal period; and an accumulating circuit configured to generate an output voltage by accumulating variation values of the sampling voltage, and provide the generated output voltage to an analog-to-digital converter (ADC) circuit, wherein the sampling voltage decreases or increases from the reference voltage according to the input current during the signal period.
    Type: Application
    Filed: June 28, 2019
    Publication date: February 20, 2020
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jung-moon Kim, Seung-hee Kuk, Si-woo Kim, Won-seok Kim, Yeong-shin Jang
  • Publication number: 20190392757
    Abstract: A pixel includes an organic light emitting diode (OLED); a first transistor between a driving power and a first node, having a gate connected to a control line; a second transistor between the first node and a second node, having a gate connected to a second electrode of a seventh transistor; a third transistor between the second node and an anode electrode of the OLED, having a gate connected to the control line; a fourth transistor between the first node and a data line; a fifth transistor between the second node and a storage capacitor; a sixth transistor between an initialization power and the anode electrode, the fourth to sixth transistors having gates connected to a scan line; the seventh transistor connected to the initialization power and the gate of the second transistor, having a gate connected to another scan line, all transistors being oxide semiconductor thin film transistors.
    Type: Application
    Filed: January 9, 2019
    Publication date: December 26, 2019
    Inventors: Yeong Shin JANG, Seung Hee KUK, Si Woo KIM, Won Seok KIM, Jung Moon KIM
  • Publication number: 20190392765
    Abstract: A pixel includes an organic light emitting diode (OLED), a first transistor connected to a driver and a first node, having a gate connected to a control line, a second transistor between to the first node and a second node, having a gate connected to a third node, a third transistor connected to an anode of the OLED, having a gate connected to the control line, a fourth transistor between the first node and a data line, having a gate connected to a scan line, a fifth transistor between the second and third nodes, having a gate connected to the scan line, a sixth transistor between an initializing line and the anode, having a gate connected to the scan line, a seventh transistor between the initializing line and the third node, having a gate connected to another scan line, and a storage capacitor between the driver and the third node.
    Type: Application
    Filed: January 18, 2019
    Publication date: December 26, 2019
    Inventors: Seung Hee KUK, Si Woo KIM, Won Seok KIM, Jung Moon KIM, Yeong Shin JANG
  • Patent number: 10516083
    Abstract: An LED is provided to include: a first conductive type semiconductor layer; an active layer positioned over the first conductive type semiconductor layer; a second conductive type semiconductor layer positioned over the active layer; and a defect blocking layer comprising a masking region to cover at least a part of the top surface of the second conductive semiconductor layer and an opening region to partially expose the top surface of the second conductive type semiconductor layer, wherein the active layer and the second conductive type semiconductor layer are disposed to expose a part of the first conductive type semiconductor layer, and wherein the defect blocking layer comprises a first region and a second region surrounding the first region, and a ratio of the area of the opening region to the area of the masking region in the first region is different from a ratio of the area of the opening region to the area of the masking region in the second region.
    Type: Grant
    Filed: February 4, 2019
    Date of Patent: December 24, 2019
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Jong Hyeon Chae, Jong Min Jang, Won Young Roh, Dae Woong Suh, Min Woo Kang, Joon Sub Lee, Hyun A. Kim, Kyoung Wan Kim, Chang Yeon Kim
  • Publication number: 20190371223
    Abstract: An image shift control method including generating image position information by using sample data of first image data; and determining a movement direction and a movement amount of an image by using the image position information.
    Type: Application
    Filed: August 16, 2019
    Publication date: December 5, 2019
    Inventors: Byung Ki Chun, Hyun Seuk Yoo, Jun Gyu Lee, Won Woo Jang, Yong Seok Choi