Abstract: A developer and a color image forming apparatus are provided. The color image forming apparatus includes a development cartridge including a photosensitive drum and a container which stores toner. A toner cartridge is configured to attach to and detach from the development cartridge which contains the toner. A toner transfer unit rotates to agitate the toner stored in the development cartridge so as to move the toner when the toner cartridge attaches to and detaches from the development cartridge.

Abstract: Photoresist cleaning solutions are used to clean semiconductor substrates before or after an exposing step when photoresist patterns are formed. The cleaning solutions include H2O and a nonionic surfactant compound represented by Formula 1. By spraying the disclosed cleaning solutions on a surface of the semiconductor substrate before or after exposing step to form a photoresist pattern, the desired pattern only is obtained and unnecessary patterns generated in undesired regions by ghost images are avoided as excess acid generated by the photoacid generator is neutralized and removed and damage to unexposed portions of the photoresist polymer is avoided. wherein R1 and R2 are independently H, C1-C20 alkyl, C5-C25 alkyl aryl or C1-C10 ester; m is 1 or 2; n is an integer ranging from 10 to 300; and o is 0 or 1.

Abstract: Disclosed herein is a method for manufacturing a semiconductor device. According to the present invention, a device isolation film having a step difference occurring during a process of forming a device isolation film in a scribe lane region serves as a first alignment key, and a second alignment key formed during a process of forming a recess gate region is used in the subsequent process, thereby improving the process steps and product cost.

Abstract: Disclosed are an organic anti-reflective coating polymer having a structure represented by the following formula I, its preparation method and an organic anti-reflective coating composition with respect to an ultra-fine pattern formation process of the photoresist for photolithography technique using ArF light source with a wavelength of 193 nm or VUV light source with a wavelength of 157 nm. An organic anti-reflective coating polymer capable of protecting a photoresist from amines in the atmosphere to minimize the post exposure delay effect after exposure to light and, at the same time, enhances notching status, such as, a pattern distortion caused by diffused reflection, and reducing reflection rate to minimize the swing effect. wherein m is an integer ranging from 5 to 5000.

Abstract: A color image forming apparatus includes a plurality of developers, an exposure unit forming a plurality of latent images on a photosensitive medium, and a power transmission unit simultaneously driving two of the developers that store toners having different polarities and colors. A charging unit converts toner images having different polarities, which are developed on the photosensitive medium, into toner images having the same polarity. The toner images are superpositionally transferred from the photosensitive medium to an intermediate transfer unit to form a color image.

Abstract: Provided are a multi-pass image forming apparatus and an image forming method using the same. The multi-pass image forming apparatus includes a plurality of developers for forming a plurality of electrostatic latent images using toners having different polarities and colors in one development process and for forming a multi-color image in at least two development processes; an exposure unit for forming the plurality of the electrostatic latent images on a photosensitive medium; and an intermediate transferring unit for having a toner images transferred thereon from the photosensitive medium that overlap to form the multi-color image, wherein the toner image may overlap another toner image on the intermediate transferring unit.

Abstract: A developer and a color image forming apparatus are provided. The color image forming apparatus includes a development cartridge including a photosensitive drum and a container which stores toner. A toner cartridge is configured to attach to and detach from the development cartridge which contains the toner. A toner transfer unit rotates to agitate the toner stored in the development cartridge so as to move the toner when the toner cartridge attaches to and detaches from the development cartridge.

Abstract: Disclosed are an organic anti-reflective coating polymer having a structure represented by the following formula I, its preparation method and an organic anti-reflective coating composition with respect to an ultra-fine pattern formation process of the photoresist for photolithography technique using ArF light source with a wavelength of 193 nm or VUV light source with a wavelength of 157 nm. An organic anti-reflective coating polymer capable of protecting a photoresist from amines in the atmosphere to minimize the post exposure delay effect after exposure to light and, at the same time, enhances notching status, such as, a pattern distortion caused by diffused reflection, and reducing reflection rate to minimize the swing effect. wherein m is an integer ranging from 5 to 5000.