Abstract: The present invention relates to a method for forming a silicon-containing thin film using a chlorosilane compound represented by SinCl2n+2 (wherein, n is an integer of from about 3 to about 10), and a high-quality silicon nitride thin film can be formed to a uniform thickness on a surface including a protrusion or recess having a high aspect ratio by an atomic layer deposition method using an ammonia gas at a low temperature of particularly about 560° C. or less.

Abstract: The present invention relates to a method for forming a silicon-containing thin film using a chlorosilane compound represented by SinCl2n+2 (wherein, n is an integer of from about 3 to about 10), and a high-quality silicon nitride thin film can be formed to a uniform thickness on a surface including a protrusion or recess having a high aspect ratio by an atomic layer deposition method using an ammonia gas at a low temperature of particularly about 560° C. or less.

Abstract: A method for forming thin films of a semiconductor device is provided. The thin film formation method presented here is based upon a time-divisional process gas supply in a chemical vapor deposition (CVD) method, where the process gases are supplied and purged sequentially, and additionally plasma is generated in synchronization with the cycle of pulsing reactant gases. A method of forming thin films that possess a property of gradient composition profile is also presented.

Abstract: A method for forming thin films of a semiconductor device is provided. The thin film formation method presented here is based upon a time-divisional process gas supply in a chemical vapor deposition (CVD) method, where the process gases are supplied and purged sequentially, and additionally plasma is generated in synchronization with the cycle of pulsing reactant gases. A method of forming thin films that possess a property of gradient composition profile is also presented.

Abstract: A method for forming thin films of a semiconductor device is provided. The thin film formation method presented here is based upon a time-divisional process gas supply in a chemical vapor deposition (CVD) method, where the process gases are supplied and purged sequentially, and additionally plasma is generated in synchronization with the cycle of pulsing reactant gases. A method of forming thin films that possess a property of gradient composition profile is also presented.

Abstract: A method of forming copper conductors for interconnecting active and passive elements as well as signal and power lines for circuits and devices on silicon wafers is disclosed. The method disclosed herein involves with using catalysts in conjunction with a chemical vapor deposition(CVD) process with typically using copper as a source material for forming interconnecting conductors. Interconnecting method for filling trenches, via holes, contacts, large trenches and holes for power devices and lines as well as for forming large passive elements is also disclosed. Disclosed herein are also a method of filling narrow and deep trenches and small in diameter and deep holes, and a method of forming very thin film on the flat top surface so that an etchback process, such as wet or dry etchback as well as plasma etchback processes, can be used for removing a thin film in preparation for subsequent processing steps, thereby rather expensive chemical mechanical polishing(CMP) process need not be used.

Abstract: A method for forming thin films of a semiconductor device is provided. The thin film formation method presented here is based upon a time-divisional process gas supply in a chemical vapor deposition (CVD) method, where the process gases are supplied and purged sequentially, and additionally plasma is generated in synchronization with the cycle of pulsing reactant gases. A method of forming thin films that possess a property of gradient composition profile is also presented.

Abstract: A method for forming a three-component film containing metal, silicon and nitrogen for use in semiconductor devices on a substrate. The method of the present invention comprises the steps of: preparing separate reactive gases each including at least one selected from the group consisting of a gaseous metal compound, a gaseous silicon compound and an ammonia gas under conditions such that the gaseous meta compound and the ammonia gas does not form a mixture; determining a sequential gas supply cycle of the reactive gases so that supplies of the gaseous metal compound, the gaseous silicon compound and the ammonia gas are each included at least once within one gas supply cycle; and applying the reactive gases to the substrate by repeating the gas supply cycle at least once. According to the present invention, a three-component nitride film can be formed with a uniform thickness despite unevenness of a semiconductor substrate surface.

Abstract: An organometallic compound of formula LiOR′.(R′O)MR2 is vaporized at a low temperature and employed in a CVD process of a heterometallic oxide film of the LiMO2 type, wherein M is a Group 13 element such as Al or Ga; R is a C1-10 alkyl group; and R′ is a C2-10 alkyl group.

Abstract: A method of forming copper conductors for interconnecting active and passive elements as well as signal and power lines for circuits and devices on silicon wafers is disclosed. The method disclosed herein involves with using catalysts in conjunction with a chemical vapor deposition(CVD) process with typically using copper as a source material for forming interconnecting conductors. Interconnecting method for filling trenches, via holes, contacts, large trenches and holes for power devices and lines as well as for forming large passive elements is also disclosed. Disclosed herein are also a method of filling narrow and deep trenches and small in diameter and deep holes, and a method of forming very thin film on the flat top surface so that an etchback process, such as wet or dry etchback as well as plasma etchback processes, can be used for removing a thin film in preparation for subsequent processing steps, thereby rather expensive chemical mechanical polishing(CMP) process need not be used.

Abstract: A novel organometallic compound of formula M[(.mu.-OR').sub.2 M'R.sub.2 ].sub.2 can be vaporized at a low temperature and advantageously employed in the CVD of a heterometallic oxide film of the MM'.sub.2 O.sub.4 type, wherein M is a divalent element such as Be, Mg, Zn or Cd; M' is a Group 13 element such as Al or Ga; and R and R' are each independently a C.sub.1-10 alkyl group, with the proviso that if M is Mg, M' is not Al.

Abstract: Novel magnesium dialkylaluminum alkoxide derivative represented by Mg[(.mu.--OR').sub.2 AlR.sub.2 ].sub.2 wherein R and R' are each a C.sub.1-5 alkyl group and R is not the same as R', preferably magnesium dimethylaluminum isopropoxide, is easily prepared by reacting a trialkylaluminum with an alcohol or an aluminum trialkoxide to obtain a dialkylaluminum alkoxide; reacting the dialkylaluminium alkoxide with an alkali metal alkoxide to obtain an alkali metal dialkylaluminum alkoxide; and reacting the alkali metal dialkylaluminum alkoxide with a magnesium halide. The alkoxide derivative of the present invention can be vaporized at a low temperature, below 70.degree. C. and, therefore, effectively employed in the CVD process of a magnesium aluminate film.

Abstract: A novel organometallic compound of formula M[(.mu.-OR').sub.2 M'R.sub.2 ].sub.2 can be vaporized at a low temperature and advantageously employed in the CVD of a heterometallic oxide film of the MM'.sub.2 O.sub.4 type, wherein M is a divalent element such as Be, Mg, Zn or Cd; M' is a Group 13 element such as Al or Ga; and R and R' are each independently a C.sub.1-10, alkyl group, with the proviso that if M is Mg, M' is not Al.

Abstract: An aluminum oxide film is economically and conveniently deposited on a substrate by a process which comprises vaporizing a dialkylaluminum alkoxide compound at a temperature ranging from 0 to 25.degree. C. and contacting the resulting vapor with said substrate heated to a temperature ranging from 300 to 600.degree. C.