Patents by Inventor Won Young Roh
Won Young Roh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11957669Abstract: One aspect of the present disclosure is a pharmaceutical composition which includes (R)—N-[1-(3,5-difluoro-4-methansulfonylamino-phenyl)-ethyl]-3-(2-propyl-6-trifluoromethyl-pyridin-3-yl)-acrylamide as a first component and a cellulosic polymer as a second component, wherein the composition of one aspect of the present disclosure has a formulation characteristic in which crystal formation is delayed for a long time.Type: GrantFiled: August 10, 2018Date of Patent: April 16, 2024Assignee: AMOREPACIFIC CORPORATIONInventors: Joon Ho Choi, Won Kyung Cho, Kwang-Hyun Shin, Byoung Young Woo, Ki-Wha Lee, Min-Soo Kim, Jong Hwa Roh, Mi Young Park, Young-Ho Park, Eun Sil Park, Jae Hong Park
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Patent number: 11587972Abstract: A light emitting device including a substrate, first and second light emitting diodes (LEDs) each including first and second semiconductor layers, a first upper electrode disposed on the second LED, electrically connected to the first LED, and insulated from the second semiconductor layer of the first LED, and a second upper electrode disposed on the second LED, electrically connected to the second LED, and insulated from the second semiconductor layer of the second LED, in which a portion of the substrate between the LEDs does not overlap the semiconductor layers, the first upper electrode has a portion electrically connected to the second semiconductor layer of the second LED and covering the first portion and portions of the LEDs, and the second upper electrode has a groove partially enclosing the portion of the first upper electrode in a plan view.Type: GrantFiled: October 4, 2021Date of Patent: February 21, 2023Assignee: Seoul Viosys Co., Ltd.Inventors: Jong Min Jang, Jong Hyeon Chae, Joon Sup Lee, Daewoong Suh, Hyun A Kim, Won Young Roh, Min Woo Kang
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Publication number: 20220028921Abstract: A light emitting device including a substrate, first and second light emitting diodes (LEDs) each including first and second semiconductor layers, a first upper electrode disposed on the second LED, electrically connected to the first LED, and insulated from the second semiconductor layer of the first LED, and a second upper electrode disposed on the second LED, electrically connected to the second LED, and insulated from the second semiconductor layer of the second LED, in which a portion of the substrate between the LEDs does not overlap the semiconductor layers, the first upper electrode has a portion electrically connected to the second semiconductor layer of the second LED and covering the first portion and portions of the LEDs, and the second upper electrode has a groove partially enclosing the portion of the first upper electrode in a plan view.Type: ApplicationFiled: October 4, 2021Publication date: January 27, 2022Inventors: Jong Min Jang, Jong Hyeon Chae, Joon Sup Lee, Daewoong Suh, Hyun A Kim, Won Young Roh, Min Woo Kang
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Patent number: 11139338Abstract: A light emitting device including a substrate, first and second light emitting diodes disposed thereon and including a first semiconductor layer, an active layer, and a second semiconductor layer, a first upper electrode electrically connected to the first semiconductor layer and insulated from the second semiconductor layer of the first light emitting diode, a second upper electrode electrically connected to the first semiconductor layer and insulated from the second semiconductor layer of the second light emitting diode, in which the first and second light emitting diodes are spaced apart from each other to expose the substrate, the first upper electrode has a protrusion electrically connected to the second semiconductor layer of the second light emitting diode and covering portions of the exposed substrate, the first light emitting diode, and the second light emitting diode, and the second upper electrode has a groove.Type: GrantFiled: April 24, 2020Date of Patent: October 5, 2021Assignee: Seoul Viosys Co., Ltd.Inventors: Jong Min Jang, Jong Hyeon Chae, Joon Sup Lee, Daewoong Suh, Hyun A Kim, Won Young Roh, Min Woo Kang
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Patent number: 10991851Abstract: Provided are a light emitting diode (LED) in which a conductive barrier layer surrounding a reflective metal layer is defined by a protective insulating layer, and a method of manufacturing the same. A reflection pattern including a reflective metal layer and a conductive barrier layer is formed on an emission structure in which a first semiconductor layer, an active layer, and a second semiconductor layer are formed. The conductive barrier layer prevents diffusion of a reflective metal layer and extends to a protective insulating layer recessed under a photoresist pattern having an overhang structure during a forming process. Accordingly, a phenomenon where the conductive barrier layer is in contact with sidewalls of the photoresist pattern having an over-hang structure and the reflective metal layer forms points is prevented. Thus, LED modules having various shapes may be manufactured.Type: GrantFiled: June 1, 2020Date of Patent: April 27, 2021Assignee: SEOUL VIOSYS CO., LTD.Inventors: Jong Hyeon Chae, Jong Min Jang, Won Young Roh, Dae Woong Suh, Min Woo Kang, Joon Sub Lee, Hyun A. Kim
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Patent number: 10950755Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.Type: GrantFiled: September 17, 2020Date of Patent: March 16, 2021Assignee: SEOUL VIOSYS CO., LTD.Inventors: Jong Hyeon Chae, Joon Sup Lee, Daewoong Suh, Won Young Roh, Min Woo Kang, Jong Min Jang, Se Hee Oh, Hyun A Kim
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Publication number: 20210005785Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.Type: ApplicationFiled: September 17, 2020Publication date: January 7, 2021Inventors: Jong Hyeon CHAE, Joon Sup LEE, Daewoong SUH, Won Young ROH, Min Woo KANG, Jong Min JANG, Se Hee OH, Hyun A KIM
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Patent number: 10804316Abstract: A light emitting diode array is provide to include: a substrate; light emitting diodes positioned over the substrate, each including a first semiconductor layer, an active layer, and a second semiconductor layer, wherein each light emitting diode is disposed to form a first via hole structure exposing a portion of the corresponding first semiconductor layer; lower electrodes disposed over the second semiconductor layer; a first interlayer insulating layer disposed over the lower electrodes and configured to expose the portion of the first semiconductor layer of corresponding light emitting diodes; upper electrodes electrically connected to the first semiconductor layer through the first via hole structure, wherein the first via hole structure is disposed in parallel with one side of the corresponding second semiconductor layer and the first interlayer insulating layer is disposed to form a second via hole structure exposing a portion of the lower electrodes.Type: GrantFiled: December 7, 2017Date of Patent: October 13, 2020Assignee: SEOUL VIOSYS CO., LTD.Inventors: Jong Min Jang, Jong Hyeon Chae, Joon Sup Lee, Daewoong Suh, Hyun A. Kim, Won Young Roh, Min Woo Kang
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Patent number: 10784406Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.Type: GrantFiled: February 5, 2020Date of Patent: September 22, 2020Assignee: SEOUL VIOSYS CO., LTD.Inventors: Jong Hyeon Chae, Joon Sup Lee, Daewoong Suh, Won Young Roh, Min Woo Kang, Jong Min Jang, Se Hee Oh, Hyun A Kim
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Publication number: 20200295232Abstract: Provided are a light emitting diode (LED) in which a conductive barrier layer surrounding a reflective metal layer is defined by a protective insulating layer, and a method of manufacturing the same. A reflection pattern including a reflective metal layer and a conductive barrier layer is formed on an emission structure in which a first semiconductor layer, an active layer, and a second semiconductor layer are formed. The conductive barrier layer prevents diffusion of a reflective metal layer and extends to a protective insulating layer recessed under a photoresist pattern having an overhang structure during a forming process. Accordingly, a phenomenon where the conductive barrier layer is in contact with sidewalls of the photoresist pattern having an over-hang structure and the reflective metal layer forms points is prevented. Thus, LED modules having various shapes may be manufactured.Type: ApplicationFiled: June 1, 2020Publication date: September 17, 2020Inventors: Jong Hyeon CHAE, Jong Min JANG, Won Young ROH, Dae Woong SUH, Min Woo KANG, Joon Sub LEE, Hyun A. KIM
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Patent number: 10756237Abstract: A light emitting diode including a first conductive type semiconductor layer, a mesa disposed on the first conductive type semiconductor layer, the mesa including an active layer and a second conductive type semiconductor layer, a reflective electrode disposed on the mesa and configured to be in ohmic-contact with the second conductive type semiconductor layer, a current spreading layer disposed on the mesa and the reflective electrode, the current spreading layer including a first portion configured to be in ohmic-contact with an upper surface of the first conductive type semiconductor layer, a first n-contact region spaced apart from a second n-contact region with the mesa disposed between the first and second n-contact regions, and an insulation layer including a first opening exposing the reflective electrode between the first and second n-contact regions. The first and second n-contact regions have a second opening that exposes the first conductive type semiconductor layer.Type: GrantFiled: September 16, 2019Date of Patent: August 25, 2020Assignee: Seoul Viosys Co., Ltd.Inventors: Jong Hyeon Chae, Jong Min Jang, Won Young Roh, Daewoong Suh, Dae Sung Cho, Joon Sup Lee, Kyu Ho Lee, Chi Hyun In
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Patent number: 10749080Abstract: A light emitting diode apparatus includes a substrate, a first conductive type semiconductor layer, a second conductive type semiconductor layer, a mesa, a lower insulating layer, a first pad and a second pad. The substrate has a first surface and a second surface opposite to the first surface. The first conductivity type semiconductor layer is disposed on the first surface of the substrate. The mesa is disposed on the first conductive semiconductor layer and has an active layer and the second conductive semiconductor layer. A peripheral edge of the first conductive semiconductor layer is exposed. The lower insulating layer covers the mesa and the first conductive semiconductor layer and has a plurality of first openings exposing the first conductive semiconductor layer along a peripheral edge of the substrate.Type: GrantFiled: October 22, 2019Date of Patent: August 18, 2020Assignee: Seoul Viosys Co., Ltd.Inventors: Jong Hyeon Chae, Joon Sup Lee, Won Young Roh, Min Woo Kang, Jong Min Jang, Hyun A Kim, Daewoong Suh
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Publication number: 20200258936Abstract: A light emitting device including a substrate, first and second light emitting diodes disposed thereon and including a first semiconductor layer, an active layer, and a second semiconductor layer, a first upper electrode electrically connected to the first semiconductor layer and insulated from the second semiconductor layer of the first light emitting diode, a second upper electrode electrically connected to the first semiconductor layer and insulated from the second semiconductor layer of the second light emitting diode, in which the first and second light emitting diodes are spaced apart from each other to expose the substrate, the first upper electrode has a protrusion electrically connected to the second semiconductor layer of the second light emitting diode and covering portions of the exposed substrate, the first light emitting diode, and the second light emitting diode, and the second upper electrode has a groove.Type: ApplicationFiled: April 24, 2020Publication date: August 13, 2020Inventors: Jong Min Jang, Jong Hyeon Chae, Joon Sup Lee, Daewoong Suh, Hyun A Kim, Won Young Roh, Min Woo Kang
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Patent number: 10693043Abstract: Disclosed are an LED and an LED module. The LED includes: a first conductivity type semiconductor layer; a mesa disposed over the first conductivity type semiconductor layer and including an active layer and a second conductivity type semiconductor layer; a first ohmic-contact structure in contact with the first conductivity type semiconductor layer; a second ohmic-contact structure in contact with the second conductivity type semiconductor layer; a lower insulating layer at least partially covering the mesa and the first conductivity type semiconductor layer and disposed to form a first opening part at least partially exposing the first ohmic-contact structure and a second opening part at least partially exposing the second ohmic-contact structure; and a current distributing layer connected to the first ohmic-contact structure at least partially exposed by the first opening part and disposed to form a third opening part at least partially exposing the second opening part.Type: GrantFiled: February 12, 2018Date of Patent: June 23, 2020Assignee: SEOUL VIOSYS CO., LTD.Inventors: Jong Hyeon Chae, Won Young Roh, Joon Sup Lee, Min Woo Kang, Jong Min Jang, Hyun A Kim, Seon Min Bae, Daewoong Suh
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Publication number: 20200176636Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.Type: ApplicationFiled: February 5, 2020Publication date: June 4, 2020Inventors: Jong Hyeon CHAE, Joon Sup LEE, Daewoong SUH, Won Young ROH, Min Woo KANG, Jong Min JANG, Se Hee OH, Hyun A KIM
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Patent number: 10672952Abstract: Provided are a light emitting diode (LED) in which a conductive barrier layer surrounding a reflective metal layer is defined by a protective insulating layer, and a method of manufacturing the same. A reflection pattern including a reflective metal layer and a conductive barrier layer is formed on an emission structure in which a first semiconductor layer, an active layer, and a second semiconductor layer are formed. The conductive barrier layer prevents diffusion of a reflective metal layer and extends to a protective insulating layer recessed under a photoresist pattern having an overhang structure during a forming process. Accordingly, a phenomenon where the conductive barrier layer is in contact with sidewalls of the photoresist pattern having an over-hang structure and the reflective metal layer forms points is prevented. Thus, LED modules having various shapes may be manufactured.Type: GrantFiled: July 15, 2019Date of Patent: June 2, 2020Assignee: SEOUL VIOSYS CO., LTD.Inventors: Jong Hyeon Chae, Jong Min Jang, Won Young Roh, Dae Woong Suh, Min Woo Kang, Joon Sub Lee, Hyun A. Kim
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Publication number: 20200098949Abstract: A light emitting diode apparatus includes a substrate, a first conductive type semiconductor layer, a second conductive type semiconductor layer, a mesa, a lower insulating layer, a first pad and a second pad. The substrate has a first surface and a second surface opposite to the first surface. The first conductivity type semiconductor layer is disposed on the first surface of the substrate. The mesa is disposed on the first conductive semiconductor layer and has an active layer and the second conductive semiconductor layer. A peripheral edge of the first conductive semiconductor layer is exposed. The lower insulating layer covers the mesa and the first conductive semiconductor layer and has a plurality of first openings exposing the first conductive semiconductor layer along a peripheral edge of the substrate.Type: ApplicationFiled: October 22, 2019Publication date: March 26, 2020Applicant: SEOUL VIOSYS CO., LTD.Inventors: Jong Hyeon CHAE, Joon Sup LEE, Won Young ROH, Min Woo KANG, Jong Min JANG, Hyun A KIM, Daewoong SUH
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Patent number: 10573785Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.Type: GrantFiled: December 11, 2017Date of Patent: February 25, 2020Assignee: SEOUL VIOSYS CO., LTD.Inventors: Jong Hyeon Chae, Joon Sup Lee, Daewoong Suh, Won Young Roh, Min Woo Kang, Jong Min Jang, Se Hee Oh, Hyun A Kim
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Publication number: 20200013928Abstract: A light emitting diode including a first conductive type semiconductor layer, a mesa disposed on the first conductive type semiconductor layer, the mesa including an active layer and a second conductive type semiconductor layer, a reflective electrode disposed on the mesa and configured to be in ohmic-contact with the second conductive type semiconductor layer, a current spreading layer disposed on the mesa and the reflective electrode, the current spreading layer including a first portion configured to be in ohmic-contact with an upper surface of the first conductive type semiconductor layer, a first n-contact region spaced apart from a second n-contact region with the mesa disposed between the first and second n-contact regions, and an insulation layer including a first opening exposing the reflective electrode between the first and second n-contact regions. The first and second n-contact regions have a second opening that exposes the first conductive type semiconductor layer.Type: ApplicationFiled: September 16, 2019Publication date: January 9, 2020Inventors: Jong Hyeon CHAE, Jong Min Jang, Won Young Roh, Daewoong Suh, Dae Sung Cho, Joon Sup Lee, Kyu Ho Lee, Chi Hyun In
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Patent number: 10516083Abstract: An LED is provided to include: a first conductive type semiconductor layer; an active layer positioned over the first conductive type semiconductor layer; a second conductive type semiconductor layer positioned over the active layer; and a defect blocking layer comprising a masking region to cover at least a part of the top surface of the second conductive semiconductor layer and an opening region to partially expose the top surface of the second conductive type semiconductor layer, wherein the active layer and the second conductive type semiconductor layer are disposed to expose a part of the first conductive type semiconductor layer, and wherein the defect blocking layer comprises a first region and a second region surrounding the first region, and a ratio of the area of the opening region to the area of the masking region in the first region is different from a ratio of the area of the opening region to the area of the masking region in the second region.Type: GrantFiled: February 4, 2019Date of Patent: December 24, 2019Assignee: SEOUL VIOSYS CO., LTD.Inventors: Jong Hyeon Chae, Jong Min Jang, Won Young Roh, Dae Woong Suh, Min Woo Kang, Joon Sub Lee, Hyun A. Kim, Kyoung Wan Kim, Chang Yeon Kim