Abstract: A method of cleaning a substrate processing apparatus that provides a processing space for accommodating a process wafer and includes a substrate support including an internal electrode, the method includes disposing a cover wafer on an upper surface of the substrate support; fixing the cover wafer to the substrate support using the internal electrode of the substrate support; plasma cleaning the processing space; and removing a current of the internal electrode and removing the cover wafer, wherein the cover wafer includes silicon carbide (SiC), a lower surface of the cover wafer is in contact with the substrate support, and an average roughness of an upper surface of the cover wafer is less than an average roughness of an upper surface of the process wafer.

Abstract: An electronic control unit configured to be supplied with electric power from a battery in a vehicle includes a controller. The controller is configured to accumulate the operating time of the electronic control unit under a condition where a switch of a drive source of the vehicle is in an OFF state. The controller is configured to reset the electronic control unit when the elapsed time from a start point of accumulation of the operating time is less than a predetermined elapsed time, at a point in time when the cumulative operating time obtained by accumulating the operating time reaches a predetermined cumulative time.

Abstract: A semiconductor memory device includes a substrate, first memory cells that are connected to first word lines extending along a first direction and first bit lines extending along a second direction, over the substrate, first conductive materials that are connected to the first word lines and extend from the first word lines along a third direction perpendicular to the first direction and the second direction, second conductive materials that are connected to the first bit lines and extend along the first direction over the first bit lines, and third conductive materials that are connected to the second conductive materials and extend from the second conductive materials along the third direction.

Abstract: A semiconductor memory device includes a substrate, first memory cells that are connected to first word lines extending along a first direction and first bit lines extending along a second direction, over the substrate, first conductive materials that are connected to the first word lines and extend from the first word lines along a third direction perpendicular to the first direction and the second direction, second conductive materials that are connected to the first bit lines and extend along the first direction over the first bit lines, and third conductive materials that are connected to the second conductive materials and extend from the second conductive materials along the third direction.

Abstract: An erase method of a nonvolatile memory device including a plurality of cell strings on a substrate is provided. Each string includes a plurality of memory cells stacked in a direction perpendicular to the substrate, a ground select transistor between the memory cells and the substrate, and string select transistors between the memory cells and a bit line. The erase method includes applying a precharge voltage during a first time to a first string select line, floating the first string select line during a second time after the first time, and applying an erase voltage to the substrate after the first time. The first string select line is connected to the string select transistors at a first height in the cell strings of a same row.

Abstract: An erase method of a nonvolatile memory device including a plurality of cell strings on a substrate is provided. Each string includes a plurality of memory cells stacked in a direction perpendicular to the substrate, a ground select transistor between the memory cells and the substrate, and string select transistors between the memory cells and a bit line. The erase method includes applying a precharge voltage during a first time to a first string select line, floating the first string select line during a second time after the first time, and applying an erase voltage to the substrate after the first time.

Abstract: Method and apparatus for reducing and dispersing wear to the surface of a rotatable disc in a disc drive using an adaptive dither process. The disc drive includes an actuator assembly that is secured in a parked position by a latch when not in use. The method includes determining an open latch current required to open the latch as the actuator assembly is moved from the parked position to a position over a user data storage portion of the disc. A dither current is subsequently applied to the actuator assembly to induce a reciprocating lateral displacement of the actuator assembly when the actuator assembly is secured in the parked position, wherein the maximum amplitude of the dither current is selected to be less than the open latch current.

Abstract: Method and apparatus for improving data transfer rate performance of a disc drive data handling system having a plurality of transducing heads adjacent a corresponding plurality of data recording surfaces. Concentric tracks on each of the recording surfaces are provided with a physical track address determined by servo data written to each track. Logical track addresses are assigned to the tracks by positioning a first head adjacent a selected location on the corresponding recording surface, measuring a head offset value for each of the remaining heads, and assigning the logical track addresses on each data recording surface in relation to the measured head offset values. The logical cylinders include tracks with different physical track addresses, and the tracks in each logical cylinder are nominally aligned with the heads. This reduces the need for corrective seeks after head switching within the same logical cylinder.

Abstract: Method and apparatus for reducing and dispersing wear to the surface of a rotatable disc in a disc drive using an adaptive dither process. The disc drive includes an actuator assembly that is secured in a parked position by a latch when not in use. The method includes determining an open latch current required to open the latch as the actuator assembly is moved from the parked position to a position over a user data storage portion of the disc. A dither current is subsequently applied to the actuator assembly to induce a reciprocating lateral displacement of the actuator assembly when the actuator assembly is secured in the parked position, wherein the maximum amplitude of the dither current is selected to be less than the open latch current.

Abstract: Method and apparatus for improving data transfer rate performance of a disc drive data handling system having a plurality of transducing heads adjacent a corresponding plurality of data recording surfaces. Concentric tracks on each of the recording surfaces are provided with a physical track address determined by servo data written to each track. Logical track addresses are assigned to the tracks by positioning a first head adjacent a selected location on the corresponding recording surface, measuring a head offset value for each of the remaining heads, and assigning the logical track addresses on each data recording surface in relation to the measured head offset values. The logical cylinders include tracks with different physical track addresses, and the tracks in each logical cylinder are nominally aligned with the heads. This reduces the need for corrective seeks after head switching within the same logical cylinder.