Abstract: A method for detecting minimal residual disease using tumor information is provided, including acquiring first sequencing data associated with a first sample from a patient, acquiring second sequencing data associated with a second sample from the patient, acquiring third sequencing data associated with a third sample from the patient, and performing detection of minimal residual disease for the patient based on the first sequencing data, the second sequencing data, and the third sequencing data.

Abstract: A display device includes a backlight unit and a display panel. The backlight unit includes a bottom chassis that includes a fixing surface curved to have a shape that corresponds to a graph of a sine function, a light guide member that includes a light exit surface curved to have a shape that corresponds to the fixing surface, and a light source that provides light to the light guide member. The display panel includes a display surface curved to have a shape that corresponds to the light exit surface.

Abstract: The invention provides a semiconductor device including a capacitor capable of securing capacity and exhibiting improved reliability and a semiconductor package comprising the same. The semiconductor device includes: a substrate having a cell block; a plurality of capacitors, which are in the cell block of the substrate and have first electrodes; and a support pattern, which contacts sidewalls of the first electrodes of the plurality of capacitors and supports the plurality of capacitors, wherein the support pattern includes an upper support pattern including: a first upper pattern having a plate-like structure connected as a whole in the cell block; and a second upper pattern, which contacts a bottom surface of the first upper pattern and has a top surface having a smaller area than the bottom surface of the first upper pattern, the upper support pattern contacting sidewalls of upper ends of the first electrodes.

Abstract: A display device includes a backlight unit and a display panel. The backlight unit includes a bottom chassis that includes a fixing surface curved to have a shape that corresponds to a graph of a sine function, a light guide member that includes a light exit surface curved to have a shape that corresponds to the fixing surface, and a light source that provides light to the light guide member. The display panel includes a display surface curved to have a shape that corresponds to the light exit surface.

Abstract: A semiconductor memory device may include: a substrate having a cell area defined thereon, the cell area including a cell block area and an edge area; a plurality of bottom electrodes, on the substrate, which are in parallel with a top surface of the substrate and a first direction in parallel with a top surface of the substrate, and are arranged along a second direction intersecting the first direction; and a support structure pattern, in a flat plate shape, which connects the bottom electrodes to each other, supports the bottom electrodes onto the substrate, and includes a plurality of open areas, wherein a first profile, which is a horizontal cross-sectional profile in the edge area of the support structure pattern, has a wave shape.

Abstract: The invention provides a semiconductor device including a capacitor capable of securing capacity and exhibiting improved reliability and a semiconductor package comprising the same. The semiconductor device includes: a substrate having a cell block; a plurality of capacitors, which are in the cell block of the substrate and have first electrodes; and a support pattern, which contacts sidewalls of the first electrodes of the plurality of capacitors and supports the plurality of capacitors, wherein the support pattern includes an upper support pattern including: a first upper pattern having a plate-like structure connected as a whole in the cell block; and a second upper pattern, which contacts a bottom surface of the first upper pattern and has a top surface having a smaller area than the bottom surface of the first upper pattern, the upper support pattern contacting sidewalls of upper ends of the first electrodes.

Abstract: A semiconductor device includes a substrate; a hydrogen insulating layer disposed on the substrate and including hydrogen ions; a first level layer disposed on the substrate and including a first wire and a second wire; a second level layer disposed on the substrate at a different level from the first level layer and including a third wire; an interlayer insulating layer disposed between the first level layer and the second level layer; a diffusion prevention layer contacting the third wire; a contact plug penetrating the interlayer insulating layer and electrically connecting the second wire to the third wire; and a dummy contact plug penetrating the interlayer insulating layer. The dummy contact plug contacts the first and second level layers, is spaced apart from the diffusion prevention layer, and is configured to provide a movement path for the hydrogen ions in the hydrogen insulating layer.

Abstract: A semiconductor memory device may include: a substrate having a cell area defined thereon, the cell area including a cell block area and an edge area; a plurality of bottom electrodes, on the substrate, which are in parallel with a top surface of the substrate and a first direction in parallel with a top surface of the substrate, and are arranged along a second direction intersecting the first direction; and a support structure pattern, in a flat plate shape, which connects the bottom electrodes to each other, supports the bottom electrodes onto the substrate, and includes a plurality of open areas, wherein a first profile, which is a horizontal cross-sectional profile in the edge area of the support structure pattern, has a wave shape.

Abstract: A liquid crystal panel (LCD) may include: a flexible liquid crystal panel; and a housing unit for housing the liquid crystal panel. The housing unit may have an integrated structure which includes a bottom surface, a side surface connected from the bottom surface, and a top fixing end connected from the side surface, the liquid crystal panel may be housed between the bottom surface and the top fixing end, and the housing unit may be formed of a flexible soft material.

Abstract: A semiconductor device includes a substrate; a hydrogen insulating layer disposed on the substrate and including hydrogen ions; a first level layer disposed on the substrate and including a first wire and a second wire; a second level layer disposed on the substrate at a different level from the first level layer and including a third wire; an interlayer insulating layer disposed between the first level layer and the second level layer; a diffusion prevention layer contacting the third wire; a contact plug penetrating the interlayer insulating layer and electrically connecting the second wire to the third wire; and a dummy contact plug penetrating the interlayer insulating layer. The dummy contact plug contacts the first and second level layers, is spaced apart from the diffusion prevention layer, and is configured to provide a movement path for the hydrogen ions in the hydrogen insulating layer.

Abstract: A display apparatus includes a display panel displaying an image, a mold frame disposed under the display panel to support the display panel and a lower receiving container receiving the display panel and the mold frame and having an opening portion, a bottom portion having a chamfered portion that at least one of a corner of the opening portion is chamfered, a side wall extended from the bottom portion to an upper direction and an engaging portion extended from the side wall to be protruded to an outside direction.

Abstract: A liquid crystal panel (LCD) may include: a flexible liquid crystal panel; and a housing unit for housing the liquid crystal panel. The housing unit may have an integrated structure which includes a bottom surface, a side surface connected from the bottom surface, and a top fixing end connected from the side surface, the liquid crystal panel may be housed between the bottom surface and the top fixing end, and the housing unit may be formed of a flexible soft material.

Abstract: A semiconductor device includes a semiconductor structure having a first wire extending in a first direction, an intermetallic insulating layer covering the semiconductor structure, a via structure penetrating the intermetallic insulating layer, and a second wire extending on the intermetallic insulating layer in a second direction at a predetermined angle with respect to the first direction, the second wire being connected to the first wire through the via structure and including first and second portions on each other, and a protruding portion protruding from at least one of the first and second portions, the protruding portion being at a boundary of the first and second portions.

Abstract: A method of storing data in a nonvolatile memory device comprises performing a program operation on target memory cells among multiple memory cells, performing a first verify operation to determine whether the target memory cells are in a program pass state or a program fail state, and as a consequence of determining that the target memory cells are in the program pass state, performing a second verify operation to determine whether the target memory cells exhibit a program error symptom.

Abstract: A display apparatus includes a display panel displaying an image, a mold frame disposed under the display panel to support the display panel and a lower receiving container receiving the display panel and the mold frame and having an opening portion, a bottom portion having a chamfered portion that at least one of a corner of the opening portion is chamfered, a side wall extended from the bottom portion to an upper direction and an engaging portion extended from the side wall to be protruded to an outside direction.

Abstract: A semiconductor device includes an interlayer insulating layer on a substrate, and a direct contact (DC) structure vertically penetrating the interlayer insulating layer and contacting the substrate, the DC structure including a DC hole exposing the substrate, an insulating DC spacer on an inner wall of the DC hole, and a conductive DC plug on the DC spacer and filling the DC hole, the DC plug including a lower DC plug and an upper DC plug on the lower DC plug, the lower DC plug having a smaller horizontal width than that of the upper DC plug.

Abstract: A method of storing data in a nonvolatile memory device comprises performing a program operation on target memory cells among multiple memory cells, performing a first verify operation to determine whether the target memory cells are in a program pass state or a program fail state, and as a consequence of determining that the target memory cells are in the program pass state, performing a second verify operation to determine whether the target memory cells exhibit a program error symptom.

Abstract: A semiconductor device includes a semiconductor structure having a first wire extending in a first direction, an intermetallic insulating layer covering the semiconductor structure, a via structure penetrating the intermetallic insulating layer, and a second wire extending on the intermetallic insulating layer in a second direction at a predetermined angle with respect to the first direction, the second wire being connected to the first wire through the via structure and including first and second portions on each other, and a protruding portion protruding from at least one of the first and second portions, the protruding portion being at a boundary of the first and second portions.

Abstract: A semiconductor device includes an interlayer insulating layer on a substrate, and a direct contact (DC) structure vertically penetrating the interlayer insulating layer and contacting the substrate, the DC structure including a DC hole exposing the substrate, an insulating DC spacer on an inner wall of the DC hole, and a conductive DC plug on the DC spacer and filling the DC hole, the DC plug including a lower DC plug and an upper DC plug on the lower DC plug, the lower DC plug having a smaller horizontal width than that of the upper DC plug.

Abstract: A storage device comprises at least one nonvolatile memory and a lock mode management module. The lock mode management module places the storage device in a soft lock mode in which only predetermined writing operations are allowed, upon determining that a number of reserved blocks in a flash memory is less than or equal to a reference value.