Patents by Inventor Wong-Cheng Shih
Wong-Cheng Shih has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8269311Abstract: An integrated circuit device having a capacitor structure and methods of manufacture are disclosed. The device has a substrate, e.g., silicon wafer, silicon on insulator, epitaxial wafer. The device has a dielectric layer overlying the substrate and a polysilicon layer overlying the dielectric layer. The device has a tungsten silicide layer overlying the polysilicon layer and a first oxide layer overlying the tungsten silicide layer. A nitride layer overlies the oxide layer. A second oxide layer is overlying the nitride layer to form a sandwiched oxide on nitride on oxide structure to form a capacitor dielectric. The device also has an upper capacitor plate formed overlying the second oxide layer.Type: GrantFiled: July 28, 2010Date of Patent: September 18, 2012Assignee: Semiconductor Manufacturing International (Shanghai) CorporationInventors: Chia-Ming Hsu, Wong Cheng Shih
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Publication number: 20110062551Abstract: An integrated circuit device having a capacitor structure and methods of manufacture are disclosed. The device has a substrate, e.g., silicon wafer, silicon on insulator, epitaxial wafer. The device has a dielectric layer overlying the substrate and a polysilicon layer overlying the dielectric layer. The device has a tungsten silicide layer overlying the polysilicon layer and a first oxide layer overlying the tungsten silicide layer. A nitride layer overlies the oxide layer. A second oxide layer is overlying the nitride layer to form a sandwiched oxide on nitride on oxide structure to form a capacitor dielectric. The device also has an upper capacitor plate formed overlying the second oxide layer.Type: ApplicationFiled: July 28, 2010Publication date: March 17, 2011Applicant: Semiconductor Manufacturing International (Shanghai) CorporationInventors: Chia-Ming Hsu, Wong Cheng Shih
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Publication number: 20050132549Abstract: A method for making metal-insulator-metal (MIM) capacitors having insulators with high-dielectric-constant and sandwiched between wide-band-gap insulators resulting in low leakage currents and high capacitance per unit area is achieved. The high-k layer increases the capacitance per unit area for next generation mixed-signal devices while the wide-band-gap insulators reduce leakage currents. In a second embodiment, a multilayer of different high-k materials is formed between the wide-band-gap insulators to substantially increase the capacitance per unit area. The layer materials and thicknesses are optimized to reduce the nonlinear capacitance dependence on voltage.Type: ApplicationFiled: May 25, 2004Publication date: June 23, 2005Inventors: Wong-Cheng Shih, Wen-Chi Ting, Tzyh-Cheang Lee, Chih-Hsien Lin, Shyh-Chyi Wong
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Patent number: 6656844Abstract: A method of forming a DRAM capacitor structure featuring increased surface area, has been developed. The method features a polysilicon top plate structure located overlying an array comprised of individual polysilicon storage node structures. Each polysilicon storage node structure is comprised with tall, vertical features, and additional surface area is obtained via removal of butted insulator layer from a first group of surfaces of the storage node structures. Insulator layer remains butted to a second group of storage node structure surfaces to prevent collapse of the tall, vertical features of the storage node structures during subsequent processing sequences.Type: GrantFiled: October 18, 2001Date of Patent: December 2, 2003Assignee: Taiwan Semiconductor Manufacturing CompanyInventors: Chun-Chieh Lin, Wong-Cheng Shih
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Patent number: 6640403Abstract: A method for forming a dielectric-constant-enhanced capacitor is provided. A wafer in a reaction chamber is provided, wherein said wafer comprises a first conductive layer. Then, a first dielectric layer is formed above said first conductive layer to prevent said first conductive layer from growing silicon oxide and to diminish leakage current. Next a precursor is transmitted to a vaporizer. Then said precursor is transformed to a gas and said gas is transmitted to said reaction chamber. Next, a second dielectric layer is deposited above said first dielectric layer. Then a heat treatment is proceeded and a second conductive layer is formed on said second dielectric layer.Type: GrantFiled: May 29, 2001Date of Patent: November 4, 2003Assignee: Vanguard International Semiconductor CorporationInventors: Wong-Cheng Shih, Lan Lin Chao, Tai-Bor Wu, Chich-Shang Chang
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Patent number: 6620702Abstract: Methods are presented for reducing the thermal budget in a semiconductor manufacturing process that include for instance, depositing high dielectric constant films to form MIS capacitors, where processes including plasma nitridation and oxidation and deposition processes including ALD and PVD are selectively employed to lower the overall thermal budget thereby allowing smaller structures to be reliably manufactured.Type: GrantFiled: June 25, 2001Date of Patent: September 16, 2003Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wong-Cheng Shih, Lan-Lin Chao
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Publication number: 20030096473Abstract: A method for making metal-insulator-metal (MIM) capacitors having insulators with high-dielectric-constant and sandwiched between wide-band-gap insulators resulting in low leakage currents and high capacitance per unit area is achieved. The high-k layer increases the capacitance per unit area for next generation mixed-signal devices while the wide-band-gap insulators reduce leakage currents. In a second embodiment, a multilayer of different high-k materials is formed between the wide-band-gap insulators to substantially increase the capacitance per unit area. The layer materials and thicknesses are optimized to reduce the nonlinear capacitance dependence on voltage.Type: ApplicationFiled: November 16, 2001Publication date: May 22, 2003Applicant: Taiwan Semiconductor Manufacturing CompanyInventors: Wong-Cheng Shih, Wenchi Ting, Tzyh-Cheang Lee, Chin-Hsien Lin, Shyh-Chyi Wong
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Patent number: 6559497Abstract: Within a method for fabricating a capacitor structure and a capacitor structure fabricated employing the method, there is provided a conductor barrier layer formed upon an upper capacitor plate formed within the capacitor structure. There is also provided a silicon layer formed upon the conductor barrier layer. The conductor barrier layer and the silicon layer provide for enhanced interdiffusion stability and enhanced delamination stability with respect to the upper capacitor plate, and thus enhanced reliability and performance of the capacitor structure.Type: GrantFiled: September 6, 2001Date of Patent: May 6, 2003Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wong-Cheng Shih, Tai Bor Wu, Chich Shang Chang
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Publication number: 20030077882Abstract: A method of fabricating a strained-silicon structure comprising the following steps. A substrate having an insulator layer formed thereover is provided. A silicon-on-insulator layer is formed over the insulator layer. A first SiGe layer is formed over the silicon-on-insulator layer. The first SiGe layer being strained. At least the first SiGe layer is annealed to convert the strained SiGe layer to a relaxed first SiGe layer. A second SiGe layer, having the same composition as the first SiGe layer, is formed over the first SiGe layer. The second SiGe layer being relaxed. An epitaxial silicon layer is grown over the second SiGe layer. The epitaxial silicon layer being strained to complete formation of the strained-silicon structure.Type: ApplicationFiled: July 26, 2001Publication date: April 24, 2003Applicant: Taiwan Semiconductor Manfacturing CompanyInventors: Wong-Cheng Shih, Wenchi Ting
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Publication number: 20030047770Abstract: Within a method for fabricating a capacitor structure and a capacitor structure fabricated employing the method, there is provided a conductor barrier layer formed upon an upper capacitor plate formed within the capacitor structure. There is also provided a silicon layer formed upon the conductor barrier layer. The conductor barrier layer and the silicon layer provide for enhanced interdiffusion stability and enhanced delamination stability with respect to the upper capacitor plate, and thus enhanced reliability and performance of the capacitor structure.Type: ApplicationFiled: September 6, 2001Publication date: March 13, 2003Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wong-Cheng Shih, Tai Bor Wu, Chich Shang Chang
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Publication number: 20020197818Abstract: Methods are presented for reducing the thermal budget in a semiconductor manufacturing process that include for instance, depositing high dielectric constant films to form MIS capacitors, where processes including plasma nitridation and oxidation and deposition processes including ALD and PVD are selectively employed to lower the overall thermal budget thereby allowing smaller structures to be reliably manufactured.Type: ApplicationFiled: June 25, 2001Publication date: December 26, 2002Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wong-Cheng Shih, Lan-Lin Chao
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Microelectronic capacitor with capacitor plate layer formed of tungsten rich tungsten oxide material
Patent number: 6456482Abstract: Within both a method for forming a capacitor and a capacitor formed employing the method, there is employed for forming at least part of at least one of a first capacitor plate and a second capacitor plate a tungsten rich tungsten oxide material having a tungsten:oxygen atomic ratio of from about 5:1 to about 1:1. By forming the at least part of the at least one of the first capacitor plate and the second capacitor plate of the foregoing tungsten rich tungsten oxide material, the capacitor is formed with attenuated leakage current density.Type: GrantFiled: September 5, 2001Date of Patent: September 24, 2002Assignee: Taiwan Semiconductor Manufacturing Co., LtdInventors: Wong-Cheng Shih, Tai Bor Wu, Chich Shang Chang -
Patent number: 6436787Abstract: A method for fabricating an increased capacitance metal-insulator-metal capacitor using an integrated copper damascene process is described. A contact node is provided overlying a semiconductor substrate. An intermetal dielectric layer is deposited overlying the contact node. A damascene opening is formed through the intermetal dielectric layer to the contact node. A first metal layer is formed on the bottom and sidewalls of the damascene opening and overlying the intermetal dielectric layer. A first barrier metal layer is is deposited overlying the first metal layer. A dielectric layer is dpeosited overlying the first barrier metal layer. A second barrier metal layer is deposited overlying the dielectric layer. A second metal layer is formed overlying the second barrier metal layer and completely filling the damascene opening.Type: GrantFiled: July 26, 2001Date of Patent: August 20, 2002Assignee: Taiwan Semiconductor Manufacturing CompanyInventors: Wong-Cheng Shih, Tzyh-Cheang Lee, Wenchi Ting, Chih-Hsien Lin, Shyh-Chyi Wong
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Patent number: 6387761Abstract: A method for improving the interface between a silicon nitride film and a silicon surface is described. According to the present invention a silicon nitride film is formed on a silicon surface of a substrate. While said substrate is heated the silicon nitride film is exposed to an ambient comprising hydrogen (H2). In a prefered embodiment of the present invention the ambient comprises H2 and N2.Type: GrantFiled: February 4, 2000Date of Patent: May 14, 2002Assignees: Applied Materials, Inc., Vanguard Semiconductor, Ltd.Inventors: Wong-Cheng Shih, Pravin K. Narwankar, Randall S. Urdahl, Turgut Sahin
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Publication number: 20020012222Abstract: A method for forming a dielectric-constant-enhanced capacitor includes depositing a silicon nitride layer on polysilicon layer first, then a dielectric-constant-enhanced Tantalum-oxide-based film is deposited next, and a metal layer is deposited last. The dielectric-constant-enhanced film is produced by chemical vapor deposition and composed of a mixture of tantalum oxide and titanium oxide wherein the ratio of Ti to Ta is in range from 5 to 15 mole percent. The dielectric constant is greatly improved by a factor of 2 to 3.5 in this invention. After the dielectric-constant-enhanced thin film has been deposited, the heat treatment procedure will be proceed to diminish the leakage current greatly, when it is used in a capacitor.Type: ApplicationFiled: May 29, 2001Publication date: January 31, 2002Inventor: Wong-Cheng Shih
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Patent number: 6103567Abstract: A method of fabricating a dielectric layer which is application to be used in a capacitor. A first conductive layer is provided. A nitridation step is performed on the first conductive layer, so that a nitride layer is formed on a surface of the first conductive layer. A dielectric layer with a high dielectric constant is formed, followed by a thermal treatment and an oxygen plasma treatment to terminate dangling bonds of the dielectric layer. Consequently, oxygen is distributed on a surface of the dielectric layer and bonded with dangling bonds of the dielectric layer distributed on the surface.Type: GrantFiled: August 10, 1999Date of Patent: August 15, 2000Assignee: Vanguard International Semiconductor Corp.Inventors: Wong-Cheng Shih, Guan-Jye Peng, Lan-Lin Chao
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Patent number: 6037235Abstract: A method for improving the interface between a silicon nitride film and a silicon surface is described. According to the present invention a silicon nitride film is formed on a silicon surface of a substrate. While said substrate is heated the silicon nitride film is exposed to an ambient comprising hydrogen (H.sub.2). In a prefered embodiment of the present invention the ambient comprises H.sub.2 and N.sub.2.Type: GrantFiled: September 14, 1998Date of Patent: March 14, 2000Assignee: Applied Materials, Inc.Inventors: Pravin K. Narwankar, Randall S. Urdahl, Turgut Sahin, Wong-Cheng Shih