Abstract: A multi-bit-per-cell memory includes a memory array having reference cells and storage cells, a read circuit, a content addressable memory, and an encoder. When data is written to the memory, a set of reference values for the write are written to the reference cells. The reference values correspond to the multi-bit digital values that can be stored in a single storage cell. For a read operation, the read circuit reads the reference values from the reference cells and stores the reference values in the content addressable memory. The read circuit then reads a data value from a storage cell associated with the reference values and applies the value read to the content addressable memory for a match operation. The output data is equal to the number or address of the entry containing the reference value that matches the data value.