Abstract: A method for identifying autonomous driving vehicles, performed by an autonomous driving vehicle identification apparatus installed in a roadside unit (RSU), may comprise: receiving, from a vehicle entering a vehicle-to-infrastructure (V2I) communication area of the RSU, a probe vehicle data (PVD) message; determining whether a data element indicating an autonomous driving level is present in the PVD message; and in response to determining that the data element does not exist in the PVD message, identifying the vehicle transmitting the PVD message as a normal vehicle.

Abstract: A blockchain-based certification audit data sharing and integrity verification system includes at least one user equipment configured to participate in a blockchain-based platform and mounted with a user authentication application; at least one certification agency server configured to participate in the blockchain-based platform and to provide authentication data composed of user data for authenticity verification, certificate or completion certificate data, and certification audit data; at least one blockchain-based platform server configured to record an authentication transaction in a block; and a blockchain-based certification audit data sharing and integrity verification device configured to: generate audit result data by auditing forgery verification of a document requested by the user authentication application of the user equipment using the authentication data of the at least one certification agency server in interlock with the blockchain-based platform server, and share the generated audit result

Abstract: Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a process chamber having a treating space therein, a support unit placed in the process chamber and supporting a substrate, a gas supply unit supplying a treating gas into the process chamber, a plasma source generating plasma using the treating gas, and a liner unit adjacent to or being in contact with an inner side wall of the process chamber or the support unit in the process chamber. The support unit includes an upper plate on which the substrate is placed, a top surface of the upper plate being formed of a non-conduction material, an electrode plate placed below the upper plate and formed of a conduction material, and a lower plate placed below the electrode plate and having a ring shape. A cooling member is provided in the lower plate.

Abstract: Provided are a substrate supporting apparatus and a plasma etching apparatus having the same. There is provided a substrate supporting apparatus that can separately provide powers to a central region and an edge region by disposing an electrode supporting a substrate at the central region of the substrate supporting apparatus, and disposing an electrode receiving radio frequency (RF) power at the edge region of the substrate supporting apparatus. There is provided a substrate edge etching apparatus having the substrate supporting apparatus for removing layers or particles deposited in an edge region of a semiconductor substrate and preventing damage of a center region of the semiconductor substrate during an etching process of the substrate edge.

Abstract: Provided is a substrate processing apparatus using plasma. The apparatus includes a chamber having a processing space therein, a substrate supporting assembly located in the chamber and including an electrostatic chuck supporting a substrate, a gas supplying unit supplying gases into the chamber, and a power source applying power for generating plasma from the gases supplied into the chamber. The electrostatic chuck includes a dielectric plate including an electrode adsorbing the substrate by using an electrostatic force, a body located below the dielectric plate and including a metallic plate to which a high frequency power source is connected, and a bonding unit located between the dielectric plate and the body and fastening the dielectric plate and the body. The bonding unit is formed as a multilayer structure.

Abstract: Provided are a substrate supporting apparatus and a plasma etching apparatus having the same. There is provided a substrate supporting apparatus that can separately provide powers to a central region and an edge region by disposing an electrode supporting a substrate at the central region of the substrate supporting apparatus, and disposing an electrode receiving radio frequency (RF) power at the edge region of the substrate supporting apparatus. There is provided a substrate edge etching apparatus having the substrate supporting apparatus for removing layers or particles deposited in an edge region of a semiconductor substrate and preventing damage of a center region of the semiconductor substrate during an etching process of the substrate edge.