Abstract: An image sensor including a substrate including a first surface and a second surface, and including a plurality of photoelectric conversion elements therein. A plurality of pixels may be provided in the substrate, a plurality of pixel separation structures may be configured to separate the plurality of pixels, and a plurality of contacts may be respectively connected to the plurality of pixel separation structures. A first contact among the plurality of contacts may be configured to apply a current to a first portion of the plurality of pixel separation structures, and a second contact among the plurality of contacts may be configured to detect a current from a second portion of the plurality of pixel separation structures.

Abstract: An image sensor includes a dual vertical gate. The dual vertical gate includes two vertical extension portions that are spaced apart from each other in a first direction and vertically extend in a second direction perpendicular to the first direction into a substrate, and a connection portion that connects the two vertical extension portions to each other. An element isolation layer is disposed adjacent to a side surface of the vertical extension portion in the first direction. The two vertical extension portions are separated by a separation area that extends in the second direction, and a top surface of the separation area is lower than a top surface of the element isolation layer.