Abstract: The present disclosure relates to a fiber network operation apparatus for providing a method of determining a physical path in consideration of network performance and resource efficiency in a space division multiplexing-based fiber network and allocating optical resources according thereto, and an operation method thereof.

Abstract: An apparatus for manufacturing a light emitting display device includes a stage, and at least one electric-field application module disposed on at least one side of the stage. The apparatus further includes at least one of: at least one printing head disposed above the stage, and a heating element disposed adjacent the stage. The at least one electric-field application module includes a probe head having at least one probe pin, and a driver connected to the probe head to move the probe head.

Abstract: Provided is a relay switch device including a relay housing, a first upper fixing terminal and a second upper fixing terminal arranged side by side over an inside and an outside of the relay housing, a first lower fixing terminal electrically connected to the first upper fixing terminal and arranged under the first upper fixing terminal to be apart a predetermined distance from the first upper fixing terminal, and a second lower fixing terminal electrically connected to the second upper fixing terminal and arranged under the second upper fixing terminal to be apart a predetermined distance from the second upper fixing terminal, and a circuit mode switch module provided to selectively contact the first and second upper fixing terminals or the first and second lower fixing terminals by moving a predetermined distance.

Abstract: A pixel includes a light emitting area including a central portion and an outer portion, a non-light emitting area surrounding the light emitting area, a first electrode and a second electrode that are spaced apart from each other in the light emitting area, and a first light emitting element disposed between the first electrode and the second electrode. The first electrode and the second electrode are spaced apart from each other at a first interval in the central portion, and are spaced apart from each other at a second interval in the outer portion. The second interval is larger than the first interval. An interval between the first electrode and the second electrode gradually increases from the central portion to the outer portion.

Abstract: A light emitting element, a manufacturing method of the light emitting element, a display device including the light emitting element, and a manufacturing method of the display device are provided. The light emitting element includes end portions including a first end portion and a second end portion; a side portion between the first end portion and the second end portion; a semiconductor stacked member including a first semiconductor layer adjacent to the first end portion, a second semiconductor layer adjacent to the second end portion, and an active layer between the first semiconductor layer and the second semiconductor layer; a first surface member on the side portion and having a first surface energy; and a second surface member on the end portions and having a second surface energy less than the first surface energy.

Abstract: A junction passage control system based on a location of an OHT using a power line communication, includes: an OHT controller mounted on an OHT which moves along tracks; and a central controller that is installed in a junction section of the tracks and controls junction passing of a plurality of OHTs, wherein power lines are laid on the tracks in a zone from a start point of the junction section to an end point of the junction section, and the central controller and the OHT controller transmit and receive data for a junction passage control through power line communication to and from each other.

Abstract: A display device in accordance with some embodiments may include a base layer, a first bank pattern and a second bank pattern on the base layer, and spaced apart from each other in a first direction, a first electrode overlapping the first bank pattern, a second electrode overlapping the second bank pattern, and a light emitting element aligned between the first electrode and the second electrode, wherein a distance between an end of the first electrode and an end of the first bank pattern differs from a distance between an end of the second electrode and an end of the second bank pattern in the first direction.

Abstract: The present disclosure relates to a scheme of managing and operating a multi-class quantum key provided in a unit of a quantum key length in a quantum cryptography communication network.

Abstract: The present disclosure relates to an eavesdropper detection apparatus and an operating method thereof, capable of effectively detecting an eavesdropper existing between a transmitter and a receiver in bit transmission by a quantum key distribution scheme.

Abstract: Disclosed are an apparatus for managing quantum keys and a method of operating the same to rapidly and flexibly provide quantum keys for network services by effectively and efficiently distributing quantum keys in a quantum-secured network.

Abstract: The present disclosure according to at least one embodiment provides a quantum key distribution (QKD)-based quantum digital signature method using a trusted node, the QKD-based quantum digital signature method being performed by a trusted node. The method comprises sharing a first secret key with a message-sending node, sharing a second secret key with a message-receiving node, generating a first trusted-node signature by performing a partial QKD process together with the message-sending node, generating a second trusted-node signature by performing a partial QKD process together with the message-receiving node, and verifying a first message with the shared first and second secret keys and with the first and second trusted-node signatures.

Abstract: A semiconductor device includes, first and second source/drain patterns on an active pattern and spaced apart from each other, a first source/drain contact on the first source/drain pattern and including a first source/drain barrier film and a first source/drain filling film on the first source/drain barrier film, a second source/drain contact on the second source/drain pattern, and a gate structure on the active pattern between the first and second source/drain contacts and including a gate electrode, wherein a top surface of the first source/drain contact is lower than a top surface of the gate structure, and a height from a top surface of the active pattern to a top surface of the first source/drain barrier film is less than a height from the top surface of the active pattern to a top surface of the first source/drain filling film.

Abstract: The present disclosure relates to a quantum key distribution network apparatus and an operation method for a quantum key distribution network, for independently operating a data transfer path and a quantum key consumption path on which a quantum key is consumed to encrypt corresponding data in a quantum key distribution network.

Abstract: A semiconductor device includes, first and second source/drain patterns on an active pattern and spaced apart from each other, a first source/drain contact on the first source/drain pattern and including a first source/drain barrier film and a first source/drain filling film on the first source/drain barrier film, a second source/drain contact on the second source/drain pattern, and a gate structure on the active pattern between the first and second source/drain contacts and including a gate electrode, wherein a top surface of the first source/drain contact is lower than a top surface of the gate structure, and a height from a top surface of the active pattern to a top surface of the first source/drain barrier film is less than a height from the top surface of the active pattern to a top surface of the first source/drain filling film.

Abstract: The present disclosure relates to a fiber network operation apparatus for providing a method of determining a physical path in consideration of network performance and resource efficiency in a space division multiplexing-based fiber network and allocating optical resources according thereto, and an operation method thereof.

Abstract: The present invention can provide an apparatus and a method for non-contact measuring momentum, the apparatus and the method being capable of quantitatively measuring the dynamic activity and static activity of a subject by using a plurality of IR-UWB radars and, particularly, capable of measuring, in real time, some activities of the human body and general activity of the human body by distinguishing moving activity of the subject from non-moving activity. Therefore, the activity of a subject is non-contact measured so as to minimize user inconvenience, thereby facilitating performance of an ADHD test even for a subject in a young age group, and thus ADHD can be diagnosed early.

Abstract: The present disclosure relates to an eavesdropper detection apparatus and an operating method thereof, capable of effectively detecting an eavesdropper existing between a transmitter and a receiver in bit transmission by a quantum key distribution scheme.

Abstract: A semiconductor device includes, first and second source/drain patterns on an active pattern and spaced apart from each other, a first source/drain contact on the first source/drain pattern and including a first source/drain barrier film and a first source/drain filling film on the first source/drain barrier film, a second source/drain contact on the second source/drain pattern, and a gate structure on the active pattern between the first and second source/drain contacts and including a gate electrode, wherein a top surface of the first source/drain contact is lower than a top surface of the gate structure, and a height from a top surface of the active pattern to a top surface of the first source/drain barrier film is less than a height from the top surface of the active pattern to a top surface of the first source/drain filling film.

Abstract: Provided is a semiconductor device having an enhanced characteristic and a resistor structure satisfying a desired target resistor value of a resistor device. A semiconductor device includes: a lower interlayer insulating layer disposed on a substrate comprising a resistor area; a resistor structure comprising a resistor layer and an etch stop pattern sequentially stacked on the lower interlayer insulating layer of the resistor area; an upper interlayer insulating layer configured to cover the resistor structure and disposed on the lower interlayer insulating layer; a resistor contact structure configured to pass through the upper interlayer insulating layer and the etch stop pattern and contact the resistor layer; and a resistor contact spacer disposed between the upper interlayer insulating layer, the etch stop pattern, and the resistor contact structure.

Abstract: Provided is a semiconductor device having an enhanced characteristic and a resistor structure satisfying a desired target resistor value of a resistor device. A semiconductor device includes: a lower interlayer insulating layer disposed on a substrate comprising a resistor area; a resistor structure comprising a resistor layer and an etch stop pattern sequentially stacked on the lower interlayer insulating layer of the resistor area; an upper interlayer insulating layer configured to cover the resistor structure and disposed on the lower interlayer insulating layer; a resistor contact structure configured to pass through the upper interlayer insulating layer and the etch stop pattern and contact the resistor layer; and a resistor contact spacer disposed between the upper interlayer insulating layer, the etch stop pattern, and the resistor contact structure.