Abstract: Disclosed are an apparatus for managing quantum keys and a method of operating the same to rapidly and flexibly provide quantum keys for network services by effectively and efficiently distributing quantum keys in a quantum-secured network.

Abstract: The present disclosure relates to a fiber network operation apparatus for providing a method of determining a physical path in consideration of network performance and resource efficiency in a space division multiplexing-based fiber network and allocating optical resources according thereto, and an operation method thereof.

Abstract: The present disclosure relates to a scheme of managing and operating a multi-class quantum key provided in a unit of a quantum key length in a quantum cryptography communication network.

Abstract: The present disclosure relates to an eavesdropper detection apparatus and an operating method thereof, capable of effectively detecting an eavesdropper existing between a transmitter and a receiver in bit transmission by a quantum key distribution scheme.

Abstract: Disclosed are an apparatus for managing quantum keys and a method of operating the same to rapidly and flexibly provide quantum keys for network services by effectively and efficiently distributing quantum keys in a quantum-secured network.

Abstract: The present disclosure according to at least one embodiment provides a quantum key distribution (QKD)-based quantum digital signature method using a trusted node, the QKD-based quantum digital signature method being performed by a trusted node. The method comprises sharing a first secret key with a message-sending node, sharing a second secret key with a message-receiving node, generating a first trusted-node signature by performing a partial QKD process together with the message-sending node, generating a second trusted-node signature by performing a partial QKD process together with the message-receiving node, and verifying a first message with the shared first and second secret keys and with the first and second trusted-node signatures.

Abstract: A semiconductor device includes, first and second source/drain patterns on an active pattern and spaced apart from each other, a first source/drain contact on the first source/drain pattern and including a first source/drain barrier film and a first source/drain filling film on the first source/drain barrier film, a second source/drain contact on the second source/drain pattern, and a gate structure on the active pattern between the first and second source/drain contacts and including a gate electrode, wherein a top surface of the first source/drain contact is lower than a top surface of the gate structure, and a height from a top surface of the active pattern to a top surface of the first source/drain barrier film is less than a height from the top surface of the active pattern to a top surface of the first source/drain filling film.

Abstract: The present disclosure relates to a quantum key distribution network apparatus and an operation method for a quantum key distribution network, for independently operating a data transfer path and a quantum key consumption path on which a quantum key is consumed to encrypt corresponding data in a quantum key distribution network.

Abstract: A semiconductor device includes, first and second source/drain patterns on an active pattern and spaced apart from each other, a first source/drain contact on the first source/drain pattern and including a first source/drain barrier film and a first source/drain filling film on the first source/drain barrier film, a second source/drain contact on the second source/drain pattern, and a gate structure on the active pattern between the first and second source/drain contacts and including a gate electrode, wherein a top surface of the first source/drain contact is lower than a top surface of the gate structure, and a height from a top surface of the active pattern to a top surface of the first source/drain barrier film is less than a height from the top surface of the active pattern to a top surface of the first source/drain filling film.

Abstract: The present disclosure relates to a fiber network operation apparatus for providing a method of determining a physical path in consideration of network performance and resource efficiency in a space division multiplexing-based fiber network and allocating optical resources according thereto, and an operation method thereof.

Abstract: The present invention can provide an apparatus and a method for non-contact measuring momentum, the apparatus and the method being capable of quantitatively measuring the dynamic activity and static activity of a subject by using a plurality of IR-UWB radars and, particularly, capable of measuring, in real time, some activities of the human body and general activity of the human body by distinguishing moving activity of the subject from non-moving activity. Therefore, the activity of a subject is non-contact measured so as to minimize user inconvenience, thereby facilitating performance of an ADHD test even for a subject in a young age group, and thus ADHD can be diagnosed early.

Abstract: The present disclosure relates to an eavesdropper detection apparatus and an operating method thereof, capable of effectively detecting an eavesdropper existing between a transmitter and a receiver in bit transmission by a quantum key distribution scheme.

Abstract: A semiconductor device includes, first and second source/drain patterns on an active pattern and spaced apart from each other, a first source/drain contact on the first source/drain pattern and including a first source/drain barrier film and a first source/drain filling film on the first source/drain barrier film, a second source/drain contact on the second source/drain pattern, and a gate structure on the active pattern between the first and second source/drain contacts and including a gate electrode, wherein a top surface of the first source/drain contact is lower than a top surface of the gate structure, and a height from a top surface of the active pattern to a top surface of the first source/drain barrier film is less than a height from the top surface of the active pattern to a top surface of the first source/drain filling film.

Abstract: Provided is a semiconductor device having an enhanced characteristic and a resistor structure satisfying a desired target resistor value of a resistor device. A semiconductor device includes: a lower interlayer insulating layer disposed on a substrate comprising a resistor area; a resistor structure comprising a resistor layer and an etch stop pattern sequentially stacked on the lower interlayer insulating layer of the resistor area; an upper interlayer insulating layer configured to cover the resistor structure and disposed on the lower interlayer insulating layer; a resistor contact structure configured to pass through the upper interlayer insulating layer and the etch stop pattern and contact the resistor layer; and a resistor contact spacer disposed between the upper interlayer insulating layer, the etch stop pattern, and the resistor contact structure.

Abstract: Provided is a semiconductor device having an enhanced characteristic and a resistor structure satisfying a desired target resistor value of a resistor device. A semiconductor device includes: a lower interlayer insulating layer disposed on a substrate comprising a resistor area; a resistor structure comprising a resistor layer and an etch stop pattern sequentially stacked on the lower interlayer insulating layer of the resistor area; an upper interlayer insulating layer configured to cover the resistor structure and disposed on the lower interlayer insulating layer; a resistor contact structure configured to pass through the upper interlayer insulating layer and the etch stop pattern and contact the resistor layer; and a resistor contact spacer disposed between the upper interlayer insulating layer, the etch stop pattern, and the resistor contact structure.

Abstract: A torque converter includes a torsional damper assembly. The torsional damper assembly includes a damper. The damper has an electromagnetic coil and a magnetorheological fluid. The electromagnetic coil is positioned such that a magnetic field from the electromagnetic coil adjusts a viscosity of the magnetorheological fluid when a current flows through the electromagnetic coil.

Abstract: A torque converter includes a torsional damper assembly. The torsional damper assembly includes a damper. The damper has an electromagnetic coil and a magnetorheological fluid. The electromagnetic coil is positioned such that a magnetic field from the electromagnetic coil adjusts a viscosity of the magnetorheological fluid when a current flows through the electromagnetic coil.

Abstract: A brake clutch for an automatic transmission includes a piston that is positioned adjacent a multi-disc clutch pack and is movable between an engaged configuration and a disengaged configuration relative to the multi-disc clutch pack. Teeth of a plurality of ratcheting teeth of the piston are meshed with teeth of a plurality of ratcheting teeth of a retaining assembly of the brake clutch. A related automatic transmission is also provided.

Abstract: A process for formation of an MOS semiconductor device having an LDD structure is disclosed, which may include the steps of: forming an active region and an isolation region on a semiconductor substrate; forming a first insulating layer on the surface of the substrate; forming a gate electrode on the first insulating layer in the active region; foxing a layer of a heat sensitive fluid material on the gate electrode; carrying out a first ion implantation into the substrate; carrying out a first heat treatment on the heat sensitive layer; carrying out a second ion implantation into the substrate; removing the residual fluid material; forming a second insulating layer on the whole surface of the wafer; and carrying out a second heat treatment on the wafer.