Abstract: Provided in the present specification is a novel structured semiconductor light-emitting element capable of preventing an electrode forming failure due to an arrangement error occurring during assembly or transfer of semiconductor light-emitting elements on a substrate, when a display device is implemented using the semiconductor light-emitting elements, wherein at least one of a plurality of semiconductor light-emitting elements according to one embodiment of the present disclosure comprises: a first conductive type semiconductor layer; a second conductive type semiconductor layer located on the first conductive type semiconductor layer; an active layer arranged between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a second conductive type electrode located on the second conductive type semiconductor layer; and a first conductive type electrode located on at least a one-side stepped portion of the first conductive type semiconductor layer exposed by etching

Abstract: A solar cell according to an embodiment of the present disclosure includes a first passivation layer including a first aluminum oxide layer positioned on a first conductivity-type region composed of a polycrystalline silicon layer having an n-type conductivity and having hydrogen, and a first dielectric layer positioned on the first aluminum oxide layer and including a material different from the first aluminum oxide layer.

Abstract: Embodiment relates to a semiconductor light emitting device for a display pixel and a display device including the same. A semiconductor light emitting device for a display pixel according to an embodiment includes a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, the first conductivity type semiconductor layer in the semiconductor light emitting device for a display pixel, a first contact electrode electrically connected to, a metal layer disposed under the first conductivity-type semiconductor layer, a second contact electrode disposed on the second conductivity-type semiconductor layer, and a passivation disposed on the light emitting structure may contain layers. The metal layer may include a magnetic material, and a weight ratio of the magnetic material to the weight of the semiconductor light emitting device may be 0.25% to 36.75%.

Abstract: An embodiment relates to a display device including a semiconductor light emitting device. The display device including a semiconductor light emitting device according to an embodiment may first and second assembly electrodes spaced apart from each other, a dielectric layer disposed on the first and second assembly electrodes, an insulating layer having an assembly hole and disposed on the dielectric layer and a semiconductor light emitting device disposed on the assembly hole. The height of the assembly hole may be 4.0 ?m or more.

Abstract: An inkjet head device comprises a body comprising light emitting devices, a nozzle installed on a lower side of the body to spray the light emitting devices onto the substrate in units of droplets, and a first guide part disposed in the body to guide the light emitting devices to the nozzle in a line. Since the light emitting devices arranged in a line by the first guide part are dropped on the substrate in units of a predetermined amount of droplets, the number of light emitting devices included in each droplet may be the same or similar. Thus, since the same or similar number of light-emitting elements are disposed or aligned in each sub-pixel, the luminance in each sub-pixel obtained by the light-emitting elements can be uniform.

Abstract: The display device includes a substrate, a first and second assembly wirings on the substrate, a partition having a hole on the first and second assembly wirings, and a semiconductor light emitting device in the hole, wherein the hole configured to have an inner side with a first obtuse angle to a lower side, and wherein the semiconductor light emitting device configured to have at least one side having a second obtuse angle with respect to the lower side.

Abstract: A solar cell can include a silicon semiconductor substrate; an oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer; a diffusion region at a second surface of the silicon semiconductor substrate; a dielectric film on the polysilicon layer; a first electrode connected to the polysilicon layer through the dielectric film; a passivation film on the diffusion region; and a second electrode connected to the diffusion region through the passivation film.

Abstract: A solar cell according to an embodiment of the present disclosure includes a first passivation layer including a first aluminum oxide layer positioned on a first conductivity-type region composed of a polycrystalline silicon layer having an n-type conductivity and having hydrogen, and a first dielectric layer positioned on the first aluminum oxide layer and including a material different from the first aluminum oxide layer.

Abstract: A solar cell according to an embodiment of the present disclosure includes a first passivation layer including a first aluminum oxide layer positioned on a first conductivity-type region composed of a polycrystalline silicon layer having an n-type conductivity and having hydrogen, and a first dielectric layer positioned on the first aluminum oxide layer and including a material different from the first aluminum oxide layer.

Abstract: The present invention may be applied to display device-related technical fields and relates to a display device using a semiconductor light-emitting element, such as a micro light-emitting diode (LED), and a manufacturing method therefor. The present invention, according to one embodiment, may comprise: a substrate; a stepped film positioned on at least some pixel regions, among a plurality of individual pixel regions positioned on the substrate; an assembly electrode positioned on the substrate or the stepped film; an insulation layer positioned on the assembly electrode; a partition wall positioned on the insulation layer and defining an assembly groove having mounted therein a semiconductor light-emitting element forming the individual pixel; the semiconductor light-emitting element mounted in an assembly surface of the assembly groove; and a lighting electrode electrically connected to the semiconductor light-emitting element.

Abstract: Provided in the present specification are a substrate structure having an exclusive design for allowing assembly on a substrate, at the same time, of a plurality of semiconductor light emitting devices having various colors, and a new type of semiconductor light emitting device, such that the semiconductor light emitting devices can be quickly and accurately assembled on the substrate with a concern about color mixing. Here, at least one of the plurality of semiconductor light emitting devices, according to one embodiment of the present invention, comprises a bump part located in the lateral direction of a surface to be assembled. An assembly groove in which the semiconductor light emitting device including the bump part is assembled is provided with a protrusion part facing toward the inside of the assembly groove.

Abstract: A solar cell can include a silicon semiconductor substrate; an oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer; a diffusion region at a second surface of the silicon semiconductor substrate; a dielectric film on the polysilicon layer; a first electrode connected to the polysilicon layer through the dielectric film; a passivation film on the diffusion region; and a second electrode connected to the diffusion region through the passivation film.

Abstract: The display device includes a substrate, a first and second assembly wirings on the substrate, a partition having a hole on the first and second assembly wirings, and a semiconductor light emitting device in the hole, wherein the hole configured to have an inner side with a first obtuse angle to a lower side, and wherein the semiconductor light emitting device configured to have at least one side having a second obtuse angle with respect to the lower side.

Abstract: The display device can include a substrate; a barrier rib disposed on the substrate and having an assembly hole; a semiconductor light emitting device in the assembly hole; and an adhesive part between the substrate and the semiconductor light emitting device within the assembly hole. The adhesive part can include adhesive particles in contact with each other.

Abstract: A semiconductor light emitting device includes a light emitting structure having a first region and a second region along a major axis direction, an insulating layer surrounding a side surface of the first region, and a first electrode surrounding a side surface of the second region. The thickness of the insulating layer is the same as the thickness of the first electrode. Therefore, when implementing a display, lighting defects can be prevented and luminance deviation can be eliminated, thereby improving image quality.

Abstract: The present invention provides an assembly substrate used in a method for manufacturing a display device which mounts semiconductor light emitting devices on a predetermined position of an assembly substrate by using an electric field and a magnetic field.

Abstract: The display device can include a substrate, a barrier rib having an assembly hole on the substrate, a semiconductor light emitting device in the assembly hole, and a first connection part disposed in the assembly hole and on the barrier rib and electrically connected to a side surface of the semiconductor light emitting device. In the embodiment, maximum luminance can always be obtained regardless of whether the assembling wirings disposed on the substrate are disposed on the same layer or different layers, and each pixel has constant luminance, thereby improving image quality due to luminance uniformity.

Abstract: Embodiment relates to a semiconductor light emitting device for a display pixel and a display device including the same. A semiconductor light emitting device for a display pixel according to an embodiment includes a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, the first conductivity type semiconductor layer in the semiconductor light emitting device for a display pixel, a first contact electrode electrically connected to, a metal layer disposed under the first conductivity-type semiconductor layer, a second contact electrode disposed on the second conductivity-type semiconductor layer, and a passivation disposed on the light emitting structure may contain layers. The metal layer may include a magnetic material, and a weight ratio of the magnetic material to the weight of the semiconductor light emitting device may be 0.25% to 36.75%.

Abstract: An inkjet head device comprises a body comprising light emitting devices, a nozzle installed on a lower side of the body to spray the light emitting devices onto the substrate in units of droplets, and a first guide part disposed in the body to guide the light emitting devices to the nozzle in a line. Since the light emitting devices arranged in a line by the first guide part are dropped on the substrate in units of a predetermined amount of droplets, the number of light emitting devices included in each droplet may be the same or similar. Thus, since the same or similar number of light-emitting elements are disposed or aligned in each sub-pixel, the luminance in each sub-pixel obtained by the light-emitting elements can be uniform.

Abstract: A display device comprises a substrate comprises a substrate comprising a plurality of sub pixels, a first electrode in the plurality of sub pixels, a second electrode in the plurality of sub pixels, and adjacent to the first electrode, a first magnetic layer between the first electrode and the second electrode, and a plurality of light emitting elements between the first electrode and the second electrode. The light emitting element comprises at least one second magnetic layer in contact with the magnetic layer.