Abstract: A nanopore device for detecting charged biopolymer molecules and defining a nanochannel, includes a first gating nanoelectrode addressing a first end of the nanochannel. The device also includes a second gating nanoelectrode addressing a second end of the nanochannel opposite the first end. The device further includes a first sensing nanoelectrode addressing a first location in the nanochannel between the first and second ends.

Abstract: A nanopore device for detecting charged biopolymer molecules and defining a nanochannel, includes a first gating nanoelectrode addressing a first end of the nanochannel. The device also includes a second gating nanoelectrode addressing a second end of the nanochannel opposite the first end. The device further includes a first sensing nanoelectrode addressing a first location in the nanochannel between the first and second ends.

Abstract: A photodetector using graphene includes: a gate electrode; a graphene channel layer which is opposite to and spaced apart from the gate electrode and does not have ?-binding; a first electrode which contacts a first side of the graphene channel layer; and a second electrode which contacts a side of the graphene channel layer, where the first and second sides are opposite to each other, and where the graphene channel layer includes a first graphene layer and a first nanoparticle disposed on the first graphene layer. The first graphene layer may include a single graphene layer, or the first graphene layer may include a plurality of single graphene layers, which is sequentially stacked and does not have ?-binding.

Abstract: A photodetector using graphene includes: a gate electrode; a graphene channel layer which is opposite to and spaced apart from the gate electrode and does not have ?-binding; a first electrode which contacts a first side of the graphene channel layer; and a second electrode which contacts a side of the graphene channel layer, where the first and second sides are opposite to each other, and where the graphene channel layer includes a first graphene layer and a first nanoparticle disposed on the first graphene layer. The first graphene layer may include a single graphene layer, or the first graphene layer may include a plurality of single graphene layers, which is sequentially stacked and does not have ?-binding.

Abstract: A method of producing metallic nanocrystals (107) embedded in high-k dielectric material as well as a nonvolatile flash memory device (100) comprising a discrete charge carrier storage layer, the discrete charge carrier storage layer comprising metallic nanocrystals (107) embedded in high-k dielectric material. In the method described in this invention, firstly an ultra-thin metal film is deposited over a first (105) and a second (106) dielectric layer including high-k dielectric material provided on a substrate (101). Then, the ultra-thin metal film is annealed for forming the metallic nanocrystals (107) on the second dielectric layer (106). Finally, the second dielectric layer (106) and the metallic nanocrystals (107) are covered with a third dielectric layer (108) of high-k dielectric material for forming metallic nanocrystals (107) embedded in high-k dielectric material.

Abstract: A method of producing dielectric oxide nanodots (104) embedded in silicon dioxide as well as a nonvolatile flash memory device comprising a trapping layer (224), the trapping layer (224) comprising dielectric oxide nanodots (104) embedded in silicon dioxide are presented. Firstly an ultra-thin metal film is deposited over a first dielectric layer including silicon dioxide provided on a substrate. Then, the ultra-thin metal film is annealed for forming metallic nanodots (104) on the first dielectric layer. Afterwards, the metallic nanodots (104) are annealed for forming dielectric oxide nanodots (104) on the first dielectric layer. Finally, the first dielectric layer and the dielectric oxide nanodots (104) are covered with a second dielectric layer of silicon dioxide for forming dielectric oxide nanodots (104) embedded in silicon dioxide.

Abstract: A method for patterning a layer of a microelectronic device includes the step of forming an etching mask on the layer to be etched opposite the microelectronic substrate. The etching mask defines exposed portions of the material layer and the etching mask has a notch in the sidewall thereof adjacent the material layer. The exposed portions of the material layer are then etched. More particularly, the step of forming the etching mask can include the steps of forming a first patterned mask layer on the layer to be etched and forming a second patterned mask layer on the first patterned mask layer wherein the second patterned mask layer extends beyond the first patterned mask layer thereby defining the notch in the sidewall of the etching mask.

Abstract: A method for patterning a layer of a microelectronic device includes the step of forming an etching mask on the layer to be etched opposite the microelectronic substrate. The etching mask defines exposed portions of the material layer and the etching mask has a notch in the sidewall thereof adjacent the material layer. The exposed portions of the material layer are then etched. More particularly, the step of forming the etching mask can include the steps of forming a first patterned mask layer on the layer to be etched and forming a second patterned mask layer on the first patterned mask layer wherein the second patterned mask layer extends beyond the first patterned mask layer thereby defining the notch in the sidewall of the etching mask.