Abstract: A semiconductor device may include a gate stack that includes a first insulating pattern, a second insulating pattern adjacent to the first insulating pattern, a third insulating pattern adjacent to the second insulating pattern, a first conductive pattern between the first and second insulating patterns, and a second conductive pattern between the second and third insulating patterns, a channel layer that extends in the gate stack, a tunnel insulating layer on the channel layer, and a first data storage pattern and a second data storage pattern on the tunnel insulating layer. The first data storage pattern may include a first outer portion between the first and second insulating patterns, and a first inner portion on the first outer portion.

Abstract: Provided is a display device in which a defect by external light reflection is minimized in a non-display area. The display device includes a display panel and a touch unit arranged on the display panel. The display panel may include: a substrate including a display area and a non-display area arranged around the display area; an insulator including a valley portion, the valley portion being defined as an opening arranged along an outer side of the display area in the non-display area; and a display unit arranged in the display area and including a light-emitting element electrically connected to a thin film transistor. The touch unit may include a reflection prevention unit that overlaps the valley portion and is configured to reduce reflectivity of external light.

Abstract: An electronic device is provided that includes a first housing, a second housing configured to be slidable from the first housing, and a main printed circuit board (PCB) disposed inside the first housing and including a processor mounted therein. The electronic device also includes a camera module disposed in the second housing, and a display module. The display module includes a display having a first region exposed externally and a second region within an internal space of the first housing, while in a slide-in state of the second housing. The display module also includes a first flexible PCB (FPCB) connected to the main PCB. At least a portion of the first FPCB is movable as the second housing slides out from the first housing. The camera module is electrically connected to the first FPCB to transmit and receive electrical signals to and from the processor mounted on the main PCB.

Abstract: A semiconductor device includes a plurality of gate electrodes spaced apart from each other in a vertical direction on a substrate, a plurality of channel structures respectively penetrating a plurality of gate electrodes and extending in the vertical direction, each comprising a channel layer having a stacked structure of a first oxide semiconductor channel layer and a second oxide semiconductor channel layer which have different conductivities, and a gate insulating layer disposed between the channel layer and each of the plurality of gate electrodes, and a plurality of bit lines disposed on the plurality of channel structures and respectively connected to the plurality of channel structures, and the gate insulating layer, the first oxide semiconductor channel layer, and the second oxide semiconductor channel layer are sequentially disposed.

Abstract: A method of manufacturing a semiconductor device is provided including the operations of forming a peripheral circuit structure including a substrate, circuit elements on the substrate, and interconnections on the circuit elements. The method includes forming a plate layer on the peripheral circuit structure, forming a preliminary stack structure by alternately stacking sacrificial layers and interlayer insulating layers on the plate layer in a first direction perpendicular to an upper surface of the plate layer, and patterning the stack structure to form a stepped structure to form patterned sacrificial layers and patterned interlayer insulating layers. The method includes forming deposition inhibition layers on exposed surfaces of the patterned interlayer insulating layers, forming selective deposition layers on exposed surfaces of the patterned sacrificial layers, forming channel structures penetrating through the preliminary stack structure in the first direction, and contacting the plate layer.

Abstract: A semiconductor device includes a conductive pattern, an insulating pattern, a channel film extending in a vertical direction inside a channel hole, a charge trap pattern between the conductive pattern and the channel film inside the channel hole, a tunneling dielectric film between the charge trap pattern and the channel film, and a blocking dielectric film extending between the conductive pattern and the charge trap pattern and between the insulating pattern and the tunneling dielectric film. The insulating pattern includes a first insulating pattern overlapping the conductive pattern in the vertical direction and a second insulating pattern protruding in the lateral direction from the first insulating pattern into the channel hole and toward the channel film. The first insulating pattern has a first dielectric constant, and the second insulating pattern has a second dielectric constant that is lower than the first dielectric constant.

Abstract: Provided is a cooking device comprising a first grilling plate, a second grilling plate disposed to face the first grilling plate, a shaft configured to adjust a distance between the first grilling plate and the second grilling plate and at least one processor that controls an operation of the shaft, wherein the at least one processor configured to control the operation of the shaft so that the distance between the first grilling plate and the second grilling plate becomes a first distance in case that the first grilling plate and the second grilling plate operate in a first mode, control the operation of the shaft so that the distance between the first grilling plate and the second grilling plate becomes a second distance in case that the first grilling plate and the second grilling plate operate in a second mode, wherein the second distance is shorter than the first distance, and apply heat to the first grilling plate and the second grilling plate.

Abstract: Disclosed is a transmission radio frequency (RF) circuit including a transmission mixer configured to receive an intermediate frequency (IF) signal and up-convert the IF signal into an RF signal, a driving amplifier configured to amplify the RF signal, and an LLC filter electrically connected to a differential output of the transmission mixer and a differential input of the driving amplifier, the LLC filter comprising a first inductor connecting a first node of the differential output of the transmission mixer to a first intermediate node, a second inductor connecting a second node of the differential output of the transmission mixer to a second intermediate node, a third inductor connecting the first intermediate node to the second intermediate node, and a capacitor in parallel with the third inductor.

Abstract: Integrated circuits and integrated circuit dies include TSVs laid out in symmetrical patterns. Because of the symmetrical arrangement of the TSVs and associated routing patterns, an integrated circuit is able to support operation of multiple similar dies that are placed in different positions in the integrated circuit. This in turn simplifies the design and production of the multiple similar dies, thus reducing development and manufacturing costs for the corresponding integrated circuits.

Abstract: Disclosed is a transmission radio frequency (RF) circuit including a transmission mixer configured to receive an intermediate frequency (IF) signal and up-convert the IF signal into an RF signal, a driving amplifier configured to amplify the RF signal, and an LLC filter electrically connected to a differential output of the transmission mixer and a differential input of the driving amplifier, the LLC filter comprising a first inductor connecting a first node of the differential output of the transmission mixer to a first intermediate node, a second inductor connecting a second node of the differential output of the transmission mixer to a second intermediate node, a third inductor connecting the first intermediate node to the second intermediate node, and a capacitor in parallel with the third inductor.

Abstract: A switching transformer includes a drive amplifier configured to output an input signal by amplifying a source signal, a primary circuit including a set of primary inductors, a primary switch, and a first primary connecting wire, the set of primary inductors being configured to receive the input signal at a first primary input/output terminal, the primary switch being configured to adjust an inductance of the set of primary inductors based on a first switching operation, and the first primary connecting wire being configured to electrically connect the first primary input/output terminal to an end of the primary switch, and a secondary circuit configured to mutually electrically couple to the first primary connecting wire and at least one primary inductor among the set of primary inductors.

Abstract: A fully differential amplifier includes: an input stage comprising a first amplification circuit and a second amplification circuit, one of which is configured to generate a push signal and the other of which is configured to generate a pull signal, each by amplifying a differential input signal; an output stage for generating a differential output signal based on the push signal and the pull signal; and a feedback circuit for providing common mode feedback to the first amplification circuit based on the differential output signal, wherein the second amplification circuit may include a passive network for setting a common mode voltage of the push signal or the pull signal.

Abstract: A switching transformer includes a drive amplifier configured to output an input signal by amplifying a source signal, a primary circuit including a set of primary inductors, a primary switch, and a first primary connecting wire, the set of primary inductors being configured to receive the input signal at a first primary input/output terminal, the primary switch being configured to adjust an inductance of the set of primary inductors based on a first switching operation, and the first primary connecting wire being configured to electrically connect the first primary input/output terminal to an end of the primary switch, and a secondary circuit configured to mutually electrically couple to the first primary connecting wire and at least one primary inductor among the set of primary inductors.