Patents by Inventor Won-keun CHUNG
Won-keun CHUNG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240128347Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including a fin-type pattern extending in a first direction; a gate electrode extending in a second direction over the fin-type pattern, the second direction being different from the first direction; spacers on sidewalls of the gate electrode; a capping structure on the gate electrode and the spacers, the capping structure including a first capping pattern and a second capping pattern, the second capping pattern being on the first capping pattern; and an interlayer insulating film surrounding sidewalls of each of the spacers and sidewalls of the capping structure, the interlayer insulating film being in contact with the first capping pattern.Type: ApplicationFiled: December 27, 2023Publication date: April 18, 2024Inventors: Nam Gyu CHO, Rak Hwan KIM, Hyeok-Jun SON, Do Sun LEE, Won Keun CHUNG
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Publication number: 20240063276Abstract: A semiconductor device includes an active pattern on a substrate, the active pattern extending in a first direction, a gate electrode on the active pattern, the gate electrode extending in a second direction intersecting the first direction and including a first portion and a second portion arranged along the second direction, a first contact plug on the gate electrode, the first contact plug being connected to a top surface of the second portion of the gate electrode, a source/drain region in the active pattern on a sidewall of the gate electrode, and a source/drain contact on the source/drain region, a height of a top surface of the source/drain contact being higher than a top surface of the first portion of the gate electrode and lower than the top surface of the second portion of the gate electrode.Type: ApplicationFiled: October 17, 2023Publication date: February 22, 2024Inventors: Heon Bok LEE, Dae Yong KIM, Wan Don KIM, Jeong Hyuk YIM, Won Keun CHUNG, Hyo Seok CHOI, Sang Jin HYUN
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Patent number: 11881519Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including a fin-type pattern extending in a first direction; a gate electrode extending in a second direction over the fin-type pattern, the second direction being different from the first direction; spacers on sidewalls of the gate electrode; a capping structure on the gate electrode and the spacers, the capping structure including a first capping pattern and a second capping pattern, the second capping pattern being on the first capping pattern; and an interlayer insulating film surrounding sidewalls of each of the spacers and sidewalls of the capping structure, the interlayer insulating film being in contact with the first capping pattern.Type: GrantFiled: May 27, 2022Date of Patent: January 23, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Nam Gyu Cho, Rak Hwan Kim, Hyeok-Jun Son, Do Sun Lee, Won Keun Chung
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Patent number: 11799004Abstract: A semiconductor device includes an active pattern on a substrate, the active pattern extending in a first direction, a gate electrode on the active pattern, the gate electrode extending in a second direction intersecting the first direction and including a first portion and a second portion arranged along the second direction, a first contact plug on the gate electrode, the first contact plug being connected to a top surface of the second portion of the gate electrode, a source/drain region in the active pattern on a sidewall of the gate electrode, and a source/drain contact on the source/drain region, a height of a top surface of the source/drain contact being higher than a top surface of the first portion of the gate electrode and lower than the top surface of the second portion of the gate electrode.Type: GrantFiled: March 15, 2022Date of Patent: October 24, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Heon Bok Lee, Dae Yong Kim, Wan Don Kim, Jeong Hyuk Yim, Won Keun Chung, Hyo Seok Choi, Sang Jin Hyun
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Patent number: 11784260Abstract: A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern.Type: GrantFiled: July 12, 2022Date of Patent: October 10, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jae-Jung Kim, Dong-Soo Lee, Sang-Yong Kim, Jin-Kyu Jang, Won-Keun Chung, Sang-Jin Hyun
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Publication number: 20220352389Abstract: A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern.Type: ApplicationFiled: July 12, 2022Publication date: November 3, 2022Inventors: Jae-Jung KIM, Dong-Soo LEE, Sang-Yong KIM, Jin-Kyu JANG, Won-Keun CHUNG, Sang-Jin HYUN
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Publication number: 20220319916Abstract: A semiconductor device includes a first interlayer insulating film; a conductive connection structure provided in the first interlayer insulating film; a second interlayer insulating film provided on the first interlayer insulating film; a wiring structure provided in the second interlayer insulating film and connected to the conductive connection structure; and an insertion liner interposed between an upper surface of the conductive connection structure and the wiring structure, the insertion liner including carbon.Type: ApplicationFiled: June 13, 2022Publication date: October 6, 2022Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Won Keun CHUNG, Joon Gon LEE, Rak Hwan KIM, Chung Hwan SHIN, Do Sun LEE, Nam Gyu CHO
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Publication number: 20220285518Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including a fin-type pattern extending in a first direction; a gate electrode extending in a second direction over the fin-type pattern, the second direction being different from the first direction; spacers on sidewalls of the gate electrode; a capping structure on the gate electrode and the spacers, the capping structure including a first capping pattern and a second capping pattern, the second capping pattern being on the first capping pattern; and an interlayer insulating film surrounding sidewalls of each of the spacers and sidewalls of the capping structure, the interlayer insulating film being in contact with the first capping pattern.Type: ApplicationFiled: May 27, 2022Publication date: September 8, 2022Inventors: Nam Gyu CHO, Rak Hwan KIM, Hyeok-Jun SON, Do Sun LEE, Won Keun CHUNG
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Patent number: 11411124Abstract: A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern.Type: GrantFiled: December 28, 2020Date of Patent: August 9, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jae-Jung Kim, Dong-Soo Lee, Sang-Yong Kim, Jin-Kyu Jang, Won-Keun Chung, Sang-Jin Hyun
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Publication number: 20220199790Abstract: A semiconductor device includes an active pattern on a substrate, the active pattern extending in a first direction, a gate electrode on the active pattern, the gate electrode extending in a second direction intersecting the first direction and including a first portion and a second portion arranged along the second direction, a first contact plug on the gate electrode, the first contact plug being connected to a top surface of the second portion of the gate electrode, a source/drain region in the active pattern on a sidewall of the gate electrode, and a source/drain contact on the source/drain region, a height of a top surface of the source/drain contact being higher than a top surface of the first portion of the gate electrode and lower than the top surface of the second portion of the gate electrode.Type: ApplicationFiled: March 15, 2022Publication date: June 23, 2022Inventors: Heon Bok LEE, Dae Yong KIM, Wan Don Kim, Jeong Hyuk YIM, Won Keun CHUNG, Hyo Seok CHOI, Sang Jin HYUN
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Patent number: 11367651Abstract: A semiconductor device includes a first interlayer insulating film; a conductive connection structure provided in the first interlayer insulating film; a second interlayer insulating film provided on the first interlayer insulating film; a wiring structure provided in the second interlayer insulating film and connected to the conductive connection structure; and an insertion liner interposed between an upper surface of the conductive connection structure and the wiring structure, the insertion liner including carbon.Type: GrantFiled: June 16, 2020Date of Patent: June 21, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Won Keun Chung, Joon Gon Lee, Rak Hwan Kim, Chung Hwan Shin, Do Sun Lee, Nam Gyu Cho
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Patent number: 11349007Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including a fin-type pattern extending in a first direction; a gate electrode extending in a second direction over the fin-type pattern, the second direction being different from the first direction; spacers on sidewalls of the gate electrode; a capping structure on the gate electrode and the spacers, the capping structure including a first capping pattern and a second capping pattern, the second capping pattern being on the first capping pattern; and an interlayer insulating film surrounding sidewalls of each of the spacers and sidewalls of the capping structure, the interlayer insulating film being in contact with the first capping pattern.Type: GrantFiled: September 9, 2020Date of Patent: May 31, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Nam Gyu Cho, Rak Hwan Kim, Hyeok-Jun Son, Do Sun Lee, Won Keun Chung
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Patent number: 11296196Abstract: A semiconductor device includes an active pattern on a substrate, the active pattern extending in a first direction, a gate electrode on the active pattern, the gate electrode extending in a second direction intersecting the first direction and including a first portion and a second portion arranged along the second direction, a first contact plug on the gate electrode, the first contact plug being connected to a top surface of the second portion of the gate electrode, a source/drain region in the active pattern on a sidewall of the gate electrode, and a source/drain contact on the source/drain region, a height of a top surface of the source/drain contact being higher than a top surface of the first portion of the gate electrode and lower than the top surface of the second portion of the gate electrode.Type: GrantFiled: November 26, 2019Date of Patent: April 5, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Heon Bok Lee, Dae Yong Kim, Wan Don Kim, Jeong Hyuk Yim, Won Keun Chung, Hyo Seok Choi, Sang Jin Hyun
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Publication number: 20210210613Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including a fin-type pattern extending in a first direction; a gate electrode extending in a second direction over the fin-type pattern, the second direction being different from the first direction; spacers on sidewalls of the gate electrode; a capping structure on the gate electrode and the spacers, the capping structure including a first capping pattern and a second capping pattern, the second capping pattern being on the first capping pattern; and an interlayer insulating film surrounding sidewalls of each of the spacers and sidewalls of the capping structure, the interlayer insulating film being in contact with the first capping pattern.Type: ApplicationFiled: September 9, 2020Publication date: July 8, 2021Inventors: Nam Gyu CHO, Rak Hwan KIM, Hyeok-Jun SON, Do Sun LEE, Won Keun CHUNG
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Publication number: 20210151610Abstract: A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern.Type: ApplicationFiled: December 28, 2020Publication date: May 20, 2021Inventors: Jae-Jung KIM, Dong-Soo LEE, Sang-Yong KIM, Jin-Kyu JANG, Won-Keun CHUNG, Sang-Jin HYUN
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Patent number: 10923602Abstract: A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern.Type: GrantFiled: August 6, 2019Date of Patent: February 16, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jae-Jung Kim, Dong-Soo Lee, Sang-Yong Kim, Jin-Kyu Jang, Won-Keun Chung, Sang-Jin Hyun
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Publication number: 20210020500Abstract: A semiconductor device includes a first interlayer insulating film; a conductive connection structure provided in the first interlayer insulating film; a second interlayer insulating film provided on the first interlayer insulating film; a wiring structure provided in the second interlayer insulating film and connected to the conductive connection structure; and an insertion liner interposed between an upper surface of the conductive connection structure and the wiring structure, the insertion liner including carbon.Type: ApplicationFiled: June 16, 2020Publication date: January 21, 2021Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Won Keun Chung, Joon Gon Lee, Rak Hwan Kim, Chung Hwan Shin, Do Sun Lee, Nam Gyu Cho
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Publication number: 20200176575Abstract: A semiconductor device includes an active pattern on a substrate, the active pattern extending in a first direction, a gate electrode on the active pattern, the gate electrode extending in a second direction intersecting the first direction and including a first portion and a second portion arranged along the second direction, a first contact plug on the gate electrode, the first contact plug being connected to a top surface of the second portion of the gate electrode, a source/drain region in the active pattern on a sidewall of the gate electrode, and a source/drain contact on the source/drain region, a height of a top surface of the source/drain contact being higher than a top surface of the first portion of the gate electrode and lower than the top surface of the second portion of the gate electrode.Type: ApplicationFiled: November 26, 2019Publication date: June 4, 2020Inventors: Heon Bok Lee, Dae Yong Kim, Wan Don Kim, Jeong Hyuk Yim, Won Keun Chung, Hyo Seok Choi, Sang Jin Hyun
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Patent number: 10600913Abstract: A semiconductor device and a method for fabricating the same are provided.Type: GrantFiled: August 10, 2018Date of Patent: March 24, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Won Keun Chung, Jong Ho Park, Seung Ha Oh, Sang Yong Kim, Hoon Joo Na, Sang Jin Hyun
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Publication number: 20200035842Abstract: A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern.Type: ApplicationFiled: August 6, 2019Publication date: January 30, 2020Inventors: Jae-Jung KIM, Dong-Soo LEE, Sang-Yong KIM, Jin-Kyu JANG, Won-Keun CHUNG, Sang-Jin HYUN