Patents by Inventor Wonki Roh

Wonki Roh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12182486
    Abstract: A method of modeling damages to a crystal caused by an incident particle includes obtaining particle information and crystal information; estimating energy loss of the incident particle based on the particle information and the crystal information; estimating a volume of a vacancy based on the energy loss; estimating a vacancy reaction based on the crystal information and the volume of the vacancy; and generating output data based on the vacancy reaction, the output data including quantification data of the damages.
    Type: Grant
    Filed: October 1, 2021
    Date of Patent: December 31, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sangwoon Lee, Joohyun Jeon, Sungjin Kim, Seunghyun Kim, Wonki Roh, Chulwoo Park, Seongjae Byeon, Taeyoon An, Hyoeun Jung
  • Publication number: 20230180456
    Abstract: A semiconductor memory device including a transistor body extending in a first horizontal direction and including a first source/drain region, a single-crystal channel layer, and a second source/drain region sequentially arranged in the first horizontal direction, a gate electrode layer extending in a second horizontal direction orthogonal to the first horizontal direction and covering upper and lower surfaces of the single-crystal channel layer, a bit line connected to the first source/drain region, extending in a vertical direction, and having a first width in the second horizontal direction, a spacer covering upper and lower surfaces of the first source/drain region and having a second width greater than the first width, and a cell capacitor on a side opposite to the bit line with respect to the transistor body in the first horizontal direction and including lower and upper electrode layers and a capacitor dielectric layer therebetween may be provided.
    Type: Application
    Filed: November 29, 2022
    Publication date: June 8, 2023
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Euichul JEONG, Kiseok LEE, Wonki ROH, Hyungeun CHOI
  • Publication number: 20220309216
    Abstract: A method of modeling damages to a crystal caused by an incident particle includes obtaining particle information and crystal information; estimating energy loss of the incident particle based on the particle information and the crystal information; estimating a volume of a vacancy based on the energy loss; estimating a vacancy reaction based on the crystal information and the volume of the vacancy; and generating output data based on the vacancy reaction, the output data including quantification data of the damages.
    Type: Application
    Filed: October 1, 2021
    Publication date: September 29, 2022
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Sangwoon LEE, Joohyun JEON, Sungjin KIM, Seunghyun KIM, Wonki ROH, Chulwoo PARK, Seongjae BYEON, Taeyoon AN, Hyoeun JUNG
  • Publication number: 20220268830
    Abstract: A method for predicting a defect in a semiconductor device includes: calculating a first probability that particles will be generated in a semiconductor element by radiation; calculating a second probability that damage will occur in the semiconductor element due to the particles; generating a training data set using input data and simulation data, the input data including damage data generated using the first probability and the second probability and including at least one of a position in which the damage will occur and an amount of the damage, impurity concentration of impurities doped in at least a portion of the semiconductor element, and structural data of the semiconductor element, and the simulation data including electrical characteristics of the semiconductor element obtained as a result of a simulation based on the input data; and training a machine learning model based on the training data set to generate a defect prediction model.
    Type: Application
    Filed: October 6, 2021
    Publication date: August 25, 2022
    Inventors: Taeyoon An, Sangwoon Lee, Sungjin Kim, Seunghyun Kim, Wonki Roh, Chulwoo Park, Seongjae Byeon, Joohyun Jeon, Hyoeun Jung