Abstract: An integrated circuit device includes a substrate and a first electrically insulating layer on the substrate. An electrically conductive contact plug is provided, which extends at least partially through the first electrically insulating layer. The contact plug includes a protrusion having a top surface that is spaced farther from the substrate relative to a top surface of a portion of the first electrically insulating layer extending adjacent the contact plug. An electrically conductive line is provided with a terminal end, which extends on a first portion of the protrusion. A second electrically insulating layer is provided, which extends on a second portion of the protrusion and on the first electrically insulating layer. The second electrically insulating layer has a sidewall, which extends opposite a sidewall of the terminal end of the electrically conductive line.

Abstract: There is provided a method for providing driver's driving information of a user terminal device, including accessing a driving information providing server storing data generated in a driving recording device for a vehicle, receiving driving record data including event record data corresponding to a driving-related event of a driver from the driving information providing server, and displaying a driving-related event occurrence location on a map using the received driving record data. The driving-related event may include at least two or more of a lane departure event, a forward collision possibility event, a rear side collision possibility event, a sudden deceleration event, a sudden acceleration event, a sudden stop event, a sudden start event, and a speeding event.

Abstract: An integrated circuit device includes a substrate and a first electrically insulating layer on the substrate. An electrically conductive contact plug is provided, which extends at least partially through the first electrically insulating layer. The contact plug includes a protrusion having a top surface that is spaced farther from the substrate relative to a top surface of a portion of the first electrically insulating layer extending adjacent the contact plug. An electrically conductive line is provided with a terminal end, which extends on a first portion of the protrusion. A second electrically insulating layer is provided, which extends on a second portion of the protrusion and on the first electrically insulating layer. The second electrically insulating layer has a sidewall, which extends opposite a sidewall of the terminal end of the electrically conductive line.

Abstract: An integrated circuit device includes a substrate and a first electrically insulating layer on the substrate. An electrically conductive contact plug is provided, which extends at least partially through the first electrically insulating layer. The contact plug includes a protrusion having a top surface that is spaced farther from the substrate relative to a top surface of a portion of the first electrically insulating layer extending adjacent the contact plug. An electrically conductive line is provided with a terminal end, which extends on a first portion of the protrusion. A second electrically insulating layer is provided, which extends on a second portion of the protrusion and on the first electrically insulating layer. The second electrically insulating layer has a sidewall, which extends opposite a sidewall of the terminal end of the electrically conductive line.

Abstract: A copper line having self assembled monolayer for use in ULSI semiconductor devices and methods of making the same are presented. The copper line includes an interlayer dielectric, a self-assembled monolayer, catalytic particles on the monolayer, and a copper layer on the monolayer with the catalytic particles. The method includes the steps of forming an interlayer dielectric on a semiconductor substrate having a metal line forming region; forming a self-assembled monolayer on the metal line forming region; adsorbing catalytic particles on the self-assembled monolayer; forming using an electroless process a copper seed layer on the self-assembled monolayer having the catalytic particles adsorbed thereto; and forming a copper layer on the copper seed layer to fill in the metal line forming region.

Abstract: A copper line having self assembled monolayer for use in ULSI semiconductor devices and methods of making the same are presented. The copper line includes an interlayer dielectric, a self-assembled monolayer, catalytic particles on the monolayer, and a copper layer on the monolayer with the catalytic particles. The method includes the steps of forming an interlayer dielectric on a semiconductor substrate having a metal line forming region; forming a self-assembled monolayer on the metal line forming region; adsorbing catalytic particles on the self-assembled monolayer; forming using an electroless process a copper seed layer on the self-assembled monolayer having the catalytic particles adsorbed thereto; and forming a copper layer on the copper seed layer to fill in the metal line forming region.

Abstract: A copper wiring of a semiconductor device is which is resistant to unwanted diffusion of copper from away from the copper wiring is presented. The copper wiring includes an interlayer dielectric, a self-assembly monolayer, a plurality of catalyst particles, a metal layer, and a copper layer. The interlayer dielectric on the semiconductor substrate has a wiring forming region. The self-assembly monolayer is the wiring forming region. The plurality of catalyst particles are adsorbed onto the surface of the self-assembly monolayer. The metal layer is formed on the self-assembly monolayer which has the adsorbed catalyst particles such that the metal layer serves as both a seed layer and as a diffusion barrier. The copper layer substantially fills in the wiring forming region.

Abstract: A copper line having self assembled monolayer for use in ULSI semiconductor devices and methods of making the same are presented. The copper line includes an interlayer dielectric, a self-assembled monolayer, catalytic particles on the monolayer, and a copper layer on the monolayer with the catalytic particles. The method includes the steps of forming an interlayer dielectric on a semiconductor substrate having a metal line forming region; forming a self-assembled monolayer on the metal line forming region; adsorbing catalytic particles on the self-assembled monolayer; forming using an electroless process a copper seed layer on the self-assembled monolayer having the catalytic particles adsorbed thereto; and forming a copper layer on the copper seed layer to fill in the metal line forming region.