Abstract: A chemical supplier includes a chemical reservoir containing a chemical mixture at a room temperature, an inner space of the chemical reservoir being separated from surroundings, a supply line through which the chemical mixture is supplied to a process chamber from the chemical reservoir, an inline heater positioned on the supply line and heating the chemical mixture in the supply line to a process temperature, and a power source driving the chemical mixture to move the chemical mixture toward the process chamber.

Abstract: Semiconductor devices are provided. A semiconductor device includes a fin protruding from a substrate. Moreover, the semiconductor device includes first and second gate structures on the fin, and an isolation region between the first and second gate structures. The isolation region includes first and second portions having different respective widths. Related methods of forming semiconductor devices are also provided.

Abstract: Semiconductor devices are provided. A semiconductor device includes a fin protruding from a substrate. Moreover, the semiconductor device includes first and second gate structures on the fin, and an isolation region between the first and second gate structures. The isolation region includes first and second portions having different respective widths. Related methods of forming semiconductor devices are also provided.

Abstract: Semiconductor devices are provided. A semiconductor device includes a fin protruding from a substrate. Moreover, the semiconductor device includes first and second gate structures on the fin, and an isolation region between the first and second gate structures. The isolation region includes first and second portions having different respective widths. Related methods of forming semiconductor devices are also provided.

Abstract: Semiconductor devices are provided. A semiconductor device includes a fin protruding from a substrate. Moreover, the semiconductor device includes first and second gate structures on the fin, and an isolation region between the first and second gate structures. The isolation region includes first and second portions having different respective widths. Related methods of forming semiconductor devices are also provided.

Abstract: Provided is a method of fabricating a semiconductor device. The method of fabricating a semiconductor device includes preparing a substrate in which a scribe lane region and a chip region are defined, forming a trench in the scribe lane region of the substrate, forming a stopper layer in a part in the trench, and forming an alignment mark material on the stopper layer.

Abstract: A method of fabricating a semiconductor device, the method including forming on a substrate a transistor that includes a gate electrode and a source and drain region, forming an interlayer insulating film on the transistor, forming a contact hole in the interlayer insulating film to expose a top surface of the source and drain region, and a thin film is formed at an interface between the contact hole and the exposed top surface of the source and drain region. The method further including selectively removing at least a portion of the thin film by performing an etching process in a non-plasma atmosphere, forming an ohmic contact film on the source and drain region where at least a portion of the thin film was selectively removed, and forming a contact plug by filling the contact hole with a conductive material.

Abstract: Provided is a method of fabricating a semiconductor device. The method of fabricating a semiconductor device includes preparing a substrate in which a scribe lane region and a chip region are defined, forming a trench in the scribe lane region of the substrate, forming a stopper layer in a part in the trench, and forming an alignment mark material on the stopper layer.

Abstract: A chemical supplier includes a chemical reservoir containing a chemical mixture at a room temperature, an inner space of the chemical reservoir being separated from surroundings, a supply line through which the chemical mixture is supplied to a process chamber from the chemical reservoir, an inline heater positioned on the supply line and heating the chemical mixture in the supply line to a process temperature, and a power source driving the chemical mixture to move the chemical mixture toward the process chamber.

Abstract: A semiconductor device includes a trench in a substrate, a gate filling a part of the trench, a tilted source on a side wall of the trench, the tilted source partially overlapping the gate, an interlayer insulating film on the substrate and filling the trench, and a contact hole penetrating parts of the interlayer insulating film and the substrate and contacting the tilted source, the contact hole having a tilted surface at an angle that is equal to or larger than 80 degrees and smaller than 90 degrees.

Abstract: A semiconductor device includes a substrate including a first region and a second region, a trench-gate transistor in the first region, the trench-gate transistor including a first trench in the substrate, a gate filling at least part of the first trench, and a source in the substrate and on each sidewall of the first trench, a first field diffusion junction in the second region, an interlayer insulating film on the substrate, the interlayer insulating film covering the trench-gate transistor and the first field diffusion junction, a first contact in the first region, the first contact passing through the interlayer insulating film and contacting the source, and a second contact in the second region, the second contact passing through the interlayer insulating film and contacting the first field diffusion junction, the first contact and the second contact having an equal height and including a same material.

Abstract: A method of fabricating a semiconductor device, the method including forming on a substrate a transistor that includes a gate electrode and a source and drain region, forming an interlayer insulating film on the transistor, forming a contact hole in the interlayer insulating film to expose a top surface of the source and drain region, and a thin film is formed at an interface between the contact hole and the exposed top surface of the source and drain region. The method further including selectively removing at least a portion of the thin film by performing an etching process in a non-plasma atmosphere, forming an ohmic contact film on the source and drain region where at least a portion of the thin film was selectively removed, and forming a contact plug by filling the contact hole with a conductive material.