Abstract: Disclosed is a display device including a substrate including display and non-display areas, a first thin-film transistor located in the non-display area, and second and third thin-film transistors located in the display area. The first thin-film transistor includes a first semiconductor pattern, a first gate electrode overlapping the first semiconductor pattern, and first source and first drain electrodes connected to the first semiconductor pattern. The second thin-film transistor includes second and third semiconductor patterns including a first oxide semiconductor, a second gate electrode overlapping the second semiconductor pattern, a third gate electrode overlapping the third semiconductor pattern, and second source and second drain electrodes connected to the second and third semiconductor patterns.

Abstract: Disclosed is a display device including a substrate including display and non-display areas, a first thin-film transistor located in the non-display area, and second and third thin-film transistors located in the display area. The first thin-film transistor includes a first semiconductor pattern, a first gate electrode overlapping the first semiconductor pattern, and first source and first drain electrodes connected to the first semiconductor pattern. The second thin-film transistor includes second and third semiconductor patterns including a first oxide semiconductor, a second gate electrode overlapping the second semiconductor pattern, a third gate electrode overlapping the third semiconductor pattern, and second source and second drain electrodes connected to the second and third semiconductor patterns.

Abstract: A thin film transistor (TFT) substrate includes a TFT on the substrate. The TFT includes an active patterned layer which is made of a polycrystalline silicon, which includes a channel portion, a source portion and a drain portion, and in which protrusions are formed at boundaries between grains and recess spaces are formed between the protrusions. A barrier pattern film fills the recess spaces and forms a flat surface with the protrusions. A gate electrode is on a gate insulating layer located on the barrier pattern film and the protrusions and overlays or corresponds to the channel portion. A source electrode and a drain electrode are on the gate electrode and respectively contact the source portion and the drain portion.

Abstract: An electroluminescent display apparatus may include a first semiconductor pattern including a first channel region and a first conductive region which is a region other than the first channel region, a first gate electrode overlapping the first channel region of the first semiconductor pattern with a first gate insulation layer therebetween, a first interlayer insulation layer covering the first semiconductor pattern, and the first gate electrode, a second semiconductor pattern disposed on the first interlayer insulation layer, the second semiconductor pattern including a second channel region and a second conductive region which is a region other than the second channel region, and a second gate electrode overlapping the second channel region of the second semiconductor pattern with a second gate insulation layer therebetween.

Abstract: Disclosed is a display device including a substrate including display and non-display areas, a first thin-film transistor located in the non-display area, and second and third thin-film transistors located in the display area. The first thin-film transistor includes a first semiconductor pattern, a first gate electrode overlapping the first semiconductor pattern, and first source and first drain electrodes connected to the first semiconductor pattern. The second thin-film transistor includes second and third semiconductor patterns including a first oxide semiconductor, a second gate electrode overlapping the second semiconductor pattern, a third gate electrode overlapping the third semiconductor pattern, and second source and second drain electrodes connected to the second and third semiconductor patterns.

Abstract: A thin film transistor (TFT) substrate includes a TFT on the substrate. The TFT includes an active patterned layer which is made of a polycrystalline silicon, which includes a channel portion, a source portion and a drain portion, and in which protrusions are formed at boundaries between grains and recess spaces are formed between the protrusions. A barrier pattern film fills the recess spaces and forms a flat surface with the protrusions. A gate electrode is on a gate insulating layer located on the barrier pattern film and the protrusions and overlays or corresponds to the channel portion. A source electrode and a drain electrode are on the gate electrode and respectively contact the source portion and the drain portion.

Abstract: A driving thin-film transistor can include a substrate; a first active layer disposed on the substrate and including a first protruding portion; a second active layer overlapping with the first active layer and including a second protruding portion; a gate electrode disposed between the first active layer and the second active layer; a source electrode connected to the first protruding portion of the first active layer; and a drain electrode connected to the second protruding portion of the second active layer, in which the first protruding portion of the first active layer and the second protruding portion of the second active layer are located at different positions.

Abstract: An organic light-emitting diode (OLED) display device can include a plurality of gate lines and a plurality of data lines crossing each other to define a plurality of pixels; and an OLED and a pixel driving circuit for independently driving the OLED in each pixel, in which the pixel driving circuit includes a switching thin film transistor (TFT) and a driving TFT, a gate electrode of the switching TFT is connected to one of the plurality of gate lines, a first electrode of the switching TFT is connected to one of the plurality of data lines, a second electrode of the switching TFT is directly connected to a gate electrode of the driving TFT, a first electrode of the driving TFT is directly connected to the one of the plurality of gate lines, a second electrode of the driving TFT is connected to an anode of the OLED, and a cathode of the OLED is connected to a low-potential power line, and the one of the plurality of gate lines applies a scan power signal including a scan pulse corresponding to a gate on volta

Abstract: A driving thin-film transistor can include a substrate; a first active layer disposed on the substrate and including a first protruding portion; a second active layer overlapping with the first active layer and including a second protruding portion; a gate electrode disposed between the first active layer and the second active layer; a source electrode connected to the first protruding portion of the first active layer; and a drain electrode connected to the second protruding portion of the second active layer, in which the first protruding portion of the first active layer and the second protruding portion of the second active layer are located at different positions.

Abstract: Discussed is an organic light-emitting diode (OLED) display device for providing a signal to control a transistor and a power voltage to drive an OLED by using one signal line. The device according to an embodiment includes a plurality of gate lines and a plurality of data lines crossing each other to define a plurality of pixels, and a OLED and a pixel driving circuit for independently driving the OLED in each pixel.

Abstract: Disclosed is an organic electroluminescent device (OELD) includes a first substrate including a pixel region that includes an element region and a light emission region; a storage capacitor disposed at the element region, and including a first storage electrode, a first buffer layer on the first storage electrode, and a second storage electrode on the first buffer layer; a second buffer layer on the storage capacitor; a plurality of TFTs on the second buffer layer at the element region; and a passivation layer on the plurality of TFTs, wherein the storage capacitor overlaps at least one of the plurality of TFTs.

Abstract: Discussed is an organic light-emitting diode (OLED) display device for providing a signal to control a transistor and a power voltage to drive an OLED by using one signal line. The device according to an embodiment includes a plurality of gate lines and a plurality of data lines crossing each other to define a plurality of pixels, and a OLED and a pixel driving circuit for independently driving the OLED in each pixel.

Abstract: Disclosed is an organic electroluminescent device (OELD) includes a first substrate including a pixel region that includes an element region and a light emission region; a storage capacitor disposed at the element region, and including a first storage electrode, a first buffer layer on the first storage electrode, and a second storage electrode on the first buffer layer; a second buffer layer on the storage capacitor; a plurality of TFTs on the second buffer layer at the element region; and a passivation layer on the plurality of TFTs, wherein the storage capacitor overlaps at least one of the plurality of TFTs.

Abstract: A method of fabricating a liquid crystal display device includes forming a first adhesive pattern on a first auxiliary substrate; forming a first process panel by attaching a first substrate to the first auxiliary substrate using the first adhesive pattern; forming an array element on the first substrate; forming a second adhesive pattern on a second auxiliary substrate; forming a second process panel by attaching a second substrate to the second auxiliary substrate using the second adhesive pattern; forming a color filter element on the second substrate; attaching the first and second process panels with a liquid crystal panel between the first and second process panels; weakening an adhesive strength of the first and second adhesive patterns; and detaching the first and second auxiliary substrates from the first and second substrates, respectively.

Abstract: A method of fabricating a liquid crystal display device includes forming a first adhesive pattern on a first auxiliary substrate; forming a first process panel by attaching a first substrate to the first auxiliary substrate using the first adhesive pattern; forming an array element on the first substrate; forming a second adhesive pattern on a second auxiliary substrate; forming a second process panel by attaching a second substrate to the second auxiliary substrate using the second adhesive pattern; forming a color filter element on the second substrate; attaching the first and second process panels with a liquid crystal panel between the first and second process panels; weakening an adhesive strength of the first and second adhesive patterns; and detaching the first and second auxiliary substrates from the first and second substrates, respectively.