Abstract: A computing device includes at least one memory, and at least one processor configured to generate, based on first analysis on a pathological slide image, first biomarker expression information, generate, based on a user input for updating at least some of results of the first analysis, second biomarker expression information about the pathological slide image, and control a display device to output a report including medical information about at least some regions included in the pathological slide image, based on at least one of the first biomarker expression information or the second biomarker expression information.

Abstract: A semiconductor memory device includes a substrate including a trench and a contact recess, a direct contact placed inside the trench and having a width smaller than a width of the trench, a bit line structure placed on the direct contact and having a width smaller than the width of the trench, a spacer structure placed on side surfaces of the direct contact and the bit line structure, and a buried contact spaced apart from the direct contact and the bit line structure by the spacer structure and filling the contact recess. The spacer structure includes an oxide film placed between the direct contact and the buried contact inside the trench, a seed layer placed on the oxide film inside the trench between the direct contact and the buried contact, and a bulk layer filling the trench on the seed layer and including silicon nitride. The seed layer includes carbon.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate a bit line structure disposed on the substrate, a trench adjacent to at least one side of the bit line structure, a storage contact structure disposed within the trench, and comprising a storage contact, a silicide layer, and a storage pad which are stacked sequentially. A spacer structure is disposed between the bit line structure and the storage contact structure.

Abstract: A cervicothoracic spine restorator is disclosed. In the cervicothoracic spine restorator, a fixing structure is further included, such that relaxation of muscles such as pectoralis major muscle, pectoralis minor muscle, rectus abdominis muscle, and trapezius muscle or latissimus dorsi muscle can be easily performed. Further, the blood vessel may be expanded and the blood may be supplied smoothly to the head. This may help recovery and correction during a short correction period. There is an advantage that a separate correction mechanism, which is used for spine correction such as a abdomen band, is unnecessary.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate a bit line structure disposed on the substrate, a trench adjacent to at least one side of the bit line structure, a storage contact structure disposed within the trench, and comprising a storage contact, a silicide layer, and a storage pad which are stacked sequentially. A spacer structure is disposed between the bit line structure and the storage contact structure.

Abstract: A cervicothoracic spine restorator is disclosed. In the cervicothoracic spine restorator, a fixing structure is further included, such that relaxation of muscles such as pectoralis major muscle, pectoralis minor muscle, rectus abdominis muscle, and trapezius muscle or latissimus dorsi muscle can be easily performed. Further, the blood vessel may be expanded and the blood may be supplied smoothly to the head. This may help recovery and correction during a short correction period. There is an advantage that a separate correction mechanism, which is used for spine correction such as a abdomen band, is unnecessary.

Abstract: A semiconductor device includes a lower interconnection having second conductivity-type impurities on a substrate having first conductivity-type impurities. A switching device is on the lower interconnection. A first blocking layer is provided between the lower interconnection and the switching device. The first blocking layer includes carbon (C), germanium (Ge), or a combination thereof. A second blocking layer may be provided between the substrate and the lower interconnection.

Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes an active region defined by a device isolation layer formed in a cell region, a transistor including a buried gate in the active region, a metal contact formed on the active region positioned at one side of the buried gate, a landing pad on the metal contact, a capacitor on the landing pad and electrically connected to the active region, and a metal oxide layer between the metal contact and the active region.

Abstract: Provided are a semiconductor device and a method of manufacturing the semiconductor device. In order to improve reliability by solving a problem of conductivity that may occur when an air spacer structure that may reduce a capacitor coupling phenomenon between a plurality of conductive lines is formed, there are provided a semiconductor device including: a substrate having an active region; a contact plug connected to the active region; a landing pad spacer formed to contact a top surface of the contact plug; a contact conductive layer formed to contact the top surface of the contact plug and formed in a space defined by the landing pad spacer; a metal silicide layer formed on the contact conductive layer; and a landing pad connected to the contact conductive layer in a state in which the metal silicide layer is disposed between the landing pad and the contact conductive layer, and a method of manufacturing the semiconductor device.

Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes an active region defined by a device isolation layer formed in a cell region, a transistor including a buried gate in the active region, a metal contact formed on the active region positioned at one side of the buried gate, a landing pad on the metal contact, a capacitor on the landing pad and electrically connected to the active region, and a metal oxide layer between the metal contact and the active region.

Abstract: Provided are a semiconductor device and a method of manufacturing the semiconductor device. In order to improve reliability by solving a problem of conductivity that may occur when an air spacer structure that may reduce a capacitor coupling phenomenon between a plurality of conductive lines is formed, there are provided a semiconductor device including: a substrate having an active region; a contact plug connected to the active region; a landing pad spacer formed to contact a top surface of the contact plug; a contact conductive layer formed to contact the top surface of the contact plug and formed in a space defined by the landing pad spacer; a metal silicide layer formed on the contact conductive layer; and a landing pad connected to the contact conductive layer in a state in which the metal silicide layer is disposed between the landing pad and the contact conductive layer, and a method of manufacturing the semiconductor device.

Abstract: A semiconductor device includes a substrate having a conductive area, a first pattern formed on the substrate and having a contact hole through which the conductive area is exposed, and a contact plug in the contact hole. The contact plug includes first and second silicon layers. The first silicon layer, formed from a first compound including at least two silicon atoms, is formed in the contact hole to contact a top surface of the conductive area and a side wall of the first pattern. The second silicon layer, formed from a second compound including a number of silicon atoms less than the number of the silicon atoms of the first compound, is formed on the first silicon layer and fills a remaining space of the contact hole, the second silicon layer being spaced apart from the first pattern at an entrance of the contact hole.

Abstract: A semiconductor device includes a substrate having a conductive area, a first pattern formed on the substrate and having a contact hole through which the conductive area is exposed, and a contact plug in the contact hole. The contact plug includes first and second silicon layers. The first silicon layer, formed from a first compound including at least two silicon atoms, is formed in the contact hole to contact a top surface of the conductive area and a side wall of the first pattern. The second silicon layer, formed from a second compound including a number of silicon atoms less than the number of the silicon atoms of the first compound, is formed on the first silicon layer and fills a remaining space of the contact hole, the second silicon layer being spaced apart from the first pattern at an entrance of the contact hole.

Abstract: A semiconductor device includes a lower interconnection having second conductivity-type impurities on a substrate having first conductivity-type impurities. A switching device is on the lower interconnection. A first blocking layer is provided between the lower interconnection and the switching device. The first blocking layer includes carbon (C), germanium (Ge), or a combination thereof. A second blocking layer may be provided between the substrate and the lower interconnection.

Abstract: A semiconductor device includes a substrate having a conductive area, a first pattern formed on the substrate and having a contact hole through which the conductive area is exposed, and a contact plug in the contact hole. The contact plug includes first and second silicon layers. The first silicon layer, formed from a first compound including at least two silicon atoms, is formed in the contact hole to contact a top surface of the conductive area and a side wall of the first pattern. The second silicon layer, formed from a second compound including a number of silicon atoms less than the number of the silicon atoms of the first compound, is formed on the first silicon layer and fills a remaining space of the contact hole, the second silicon layer being spaced apart from the first pattern at an entrance of the contact hole.

Abstract: A semiconductor device includes a substrate having a conductive area, a first pattern formed on the substrate and having a contact hole through which the conductive area is exposed, and a contact plug in the contact hole. The contact plug includes first and second silicon layers. The first silicon layer, formed from a first compound including at least two silicon atoms, is formed in the contact hole to contact a top surface of the conductive area and a side wall of the first pattern. The second silicon layer, formed from a second compound including a number of silicon atoms less than the number of the silicon atoms of the first compound, is formed on the first silicon layer and fills a remaining space of the contact hole, the second silicon layer being spaced apart from the first pattern at an entrance of the contact hole.

Abstract: A method of fabricating a static random access memory device includes selectively removing an insulating film and growing a single crystalline silicon layer using selective epitaxy growth, the single crystalline silicon layer being grown in a portion from which the insulating film is removed; recessing the insulating film; and depositing an amorphous silicon layer on the single crystalline silicon layer and the insulating film, such that the amorphous silicon layer partially surrounds a top surface and side surfaces of the single crystalline silicon layer.

Abstract: Example embodiments of the present invention relate to methods of manufacturing a semiconductor device. Other example embodiments of the present invention relate to methods of manufacturing a semiconductor device having a gate electrode. In the method of manufacturing the semiconductor device, a gate electrode may be formed on a semiconductor substrate. Damage in the semiconductor substrate and a sidewall of the gate electrode may be cured, or repaired, by a radical re-oxidation process to form an oxide layer on the semiconductor substrate and the gate electrode.

Abstract: An online game service system for randomly allocating game channels according to user behavior patterns includes a user behavior pattern database, a channel database, a channel server, and a game server so that users having the same or similar game behavior patterns may play games. The user behavior pattern database stores behavior pattern classification references and user game behavior patterns. The channel database stores a list of random channels and data on game rooms at the random channels. The channel server selects a random channel according to the user behavior pattern, provides data on game rooms generated in the selected random channel, and controls a user to enter a game room. The game server provides a game service to the users having entered game rooms, determines game behavior patterns of the users by using behavior pattern references, and stores the determined game behavior patterns in the user behavior pattern database.