Abstract: Disclosed is a 1D nanofibers quasi-aligned, grid structure cross-laminated, and pore distribution and size controlled 3D polymer nanofiber membrane, and manufacturing method thereof. A 3D polymer nanofiber membrane controlled in pore size and porosity is formed by employing an electrospinning pattern forming apparatus that includes double insulating blocks quasi-aligns nanofibers in a specific direction by transforming an electric field and includes a current collector rotatable in 90°. Additionally, the 3D polymer nanofiber membrane may be used for air filters, separator, water filters, cell culture membranes, and so on by allowing various properties thereto through a functional surface coating.

Abstract: Provided is an electro-spinning type pattern forming apparatus. The electro-spinning type pattern forming apparatus includes a nozzle, a stage, and a fiber guide part. The nozzle has a first voltage applied thereto and spins a spinning solution. The stage is disposed below the nozzle to support a substrate on which a pattern is to be formed and has a second voltage applied thereto. The fiber guide part is disposed between the nozzle and the stage, and transforms the electric field formed between the nozzle and the stage to apply a force, acting in a direction parallel to the stage, to nano-fibers spun from the nozzle. The electro-spinning type pattern forming apparatus can form a nano-fiber pattern arranged in one direction.

Abstract: Disclosed is a 1D nanofibers quasi-aligned, grid structure cross-laminated, and pore distribution and size controlled 3D polymer nanofiber membrane, and manufacturing method thereof. A 3D polymer nanofiber membrane controlled in pore size and porosity is formed by employing an electrospinning pattern forming apparatus that includes double insulating blocks quasi-aligns nanofibers in a specific direction by transforming an electric field and includes a current collector rotatable in 90°. Additionally, the 3D polymer nanofiber membrane may be used for air filters, separator, water filters, cell culture membranes, and so on by allowing various properties thereto through a functional surface coating.

Abstract: Provided is an electro-spinning type pattern forming apparatus. The electro-spinning type pattern forming apparatus includes a nozzle, a stage, and a fiber guide part. The nozzle has a first voltage applied thereto and spins a spinning solution. The stage is disposed below the nozzle to support a substrate on which a pattern is to be formed and has a second voltage applied thereto. The fiber guide part is disposed between the nozzle and the stage, and transforms the electric field formed between the nozzle and the stage to apply a force, acting in a direction parallel to the stage, to nano-fibers spun from the nozzle. The electro-spinning type pattern forming apparatus can form a nano-fiber pattern arranged in one direction.

Abstract: An electrostatic spray printing apparatus includes a nozzle, a first voltage supply, and two guide electrodes. The nozzle sprays a solution containing an organic material. The first voltage supply divides the solution sprayed from the nozzle into fine droplets by applying a positive voltage to the nozzle. The guide electrodes are arranged to be spaced apart from each other with an end of the nozzle therebetween, extends in a first direction, and are grounded. The electrostatic spray printing apparatus forms an organic pattern with a uniform thickness.

Abstract: Exemplary embodiments relate to a semiconductor memory device and method of fabricating the same. The semiconductor member device may include a semiconductor substrate, a plurality of storage node contact plugs formed above the semiconductor substrate, and a plurality of storage node electrodes, each of the plurality of storage node electrodes may be located respectively above each of the plurality of storage node contact plugs. Each of the storage node electrodes may include a cylindrical body and a generally Y-shaped connection portion extending from the cylindrical body and interfacing the storage node contact plugs.