Abstract: Methods for forming a Group V-containing film comprise: a) exposing a substrate to a vapor of a Group V (five)-containing film forming composition; b) exposing the substrate to a co-reactant; and c) repeating the steps of a) and b) until a desired thickness of the Group V (five)-containing film is deposited on the substrate using a vapor deposition process, wherein the Group V (five)-containing film forming composition comprises a precursor having the formula: wherein M is Group V (five) element, vanadium (V), niobium (Nb), or tantalum (Ta); R1 to R8 each is H, a C1-C6 alkyl group, a fluoro group, an alkylsilyl group, a germyl group, an alkylamide or an alkylsilylamide; m=1 to 5, n=1 to 5.

Abstract: The disclosed lanthanide precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and at least one bidentate ligand. These precursors are suitable for depositing lanthanide containing films.

Abstract: A Metal-containing film forming composition comprising a precursor having the formula: M(?NR1)(OR2)(OR3)mL. Wherein, M = V or Nb or Ta; R1-R3 = independently H or C1-C10 alkyl group; L = Substituted or unsubstituted cyclopentadienes, cyclohexadienes, cycloheptadienes, cyclooctadienes, fluorenes, indenes, fused ring systems, propene, butadiene, pentadienes, hexadienes, heptadienes; m = 0 or 1.

Abstract: The disclosed lanthanide precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and at least one bidentate ligand. These precursors are suitable for depositing lanthanide containing films.

Abstract: A method for forming a Group IV transition metal containing film comprises a) exposing a substrate to a vapor of a Group IV transition metal containing film forming composition; b) exposing the substrate to a co-reactant; and c) repeating the steps of a) and b) until a desired thickness of the Group IV transition metal containing film is deposited on the substrate using a vapor deposition process,

Abstract: Processes of selectively depositing a metal-containing film comprise: providing a surface having a plurality of materials exposed thereon simultaneously, and exposing the surface to a vapor of a metal-containing film-forming composition that contains a precursor having the formula: LxM(—N(R)—(CR?2)n—NR?2) wherein M is a Group 12, Group 13, Group 14, Group 15, Group IV or Group V element; x+1 is the oxidation state of the M; L is an anionic ligand, independently selected from dialkylamine, alkoxy, alkylimine, bis(trialkylsilylamine), amidinate, betadiketonate, keto-imine, halide, or the like; R, R? each are independently a C1-C10 linear, branched or cyclic alkyl, alkenyl, or trialkylsilyl group; R? is H or a C1-C10 linear, branched or cyclic alkyl, alkenyl or trialkylsilyl group; n=1-4, wherein at least one of the materials is at least partially blocked by a blocking agent from the deposition of the metal-containing film through a vapor deposition process.

Abstract: Disclosed is a method for improving step coverage of a film deposited on high aspect ratio (HAR) apertures in a substrate. The method comprises i) sequentially or simultaneously exposing the substrate to a vapor of an inhibitor, a vapor of a precursor and a vapor of a co-reactant; and ii) allowing the film with a desired step coverage being deposited on the surface of the HAR apertures through a vapor deposition process, wherein the inhibitor contains O, N, S, P, B, C, F, Cl, Br, or I.

Abstract: Lanthanide-containing film forming compositions comprising Lanthanide precursors having the general formulae: wherein Ln is a Lanthanide; A is independently N, Si, B, P or O; each E is independently C, Si, B or P; m and n are independently 0, 1 or 2; m+n>1; each R is independently an H or a C1-C4 hydrocarbyl group; L is a ?1 anionic ligand selected from the group consisting of NR?2, OR?, Cp, amidinate, ?-diketonate, or keto-iminate, wherein R? is an H or a C1-C4 hydrocarbon group; and L? is NR? or O, wherein R? is an H or a C1-C4 hydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Lanthanide-containing films on one or more substrates via vapor deposition processes.

Abstract: Methods for forming a Group V-containing film comprise: a) exposing a substrate to a vapor of a Group V-containing film forming composition; b) exposing the substrate to a co-reactant; and c) repeating the steps of a) and b) until a desired thickness of the Group V-containing film is deposited on the substrate using a vapor deposition process, wherein the Group V-containing film forming composition comprises a precursor having the formula: wherein M is a Group V (five) element selected from V, Nb, or Ta; R is H, Me, Et, nPr, iPr, nBu, sBu, iBu, tBu, n-pentyl, i-pentyl, neo-pentyl, or tert-amyl; each R1, R2, R3 is independently H, an alkyl group, or a —SiR?3 group, with each R? independently being H or an alkyl group; and each R11, R12, R13, R14, R15 is independently H, Me, Et, nPr, iPr, nBu, sBu, iBu, or tBu. Methods for deposition of a LiNbO3 film on a powder are disclosed.

Abstract: Processes of selectively depositing a metal-containing film comprise: providing a surface having a plurality of materials exposed thereon simultaneously, and exposing the surface to a vapor of a metal-containing film-forming composition that contains a precursor having the formula: LxM(—N(R)—(CR?2)n—NR?2) wherein M is a Group 12, Group 13, Group 14, Group 15, Group IV or Group V element; x+1 is the oxidation state of the M; L is an anionic ligand, independently selected from dialkylamine, alkoxy, alkylimine, bis(trialkylsilylamine), amidinate, betadiketonate, keto-imine, halide, or the like; R, R? each are independently a C1-C10 linear, branched or cyclic alkyl, alkenyl, or trialkylsilyl group; R? is H or a C1-C10 linear, branched or cyclic alkyl, alkenyl or trialkylsilyl group; n=1-4, wherein at least one of the materials is at least partially blocked by a blocking agent from the deposition of the metal-containing film through a vapor deposition process.

Abstract: Group 4 transition metal-containing film forming compositions are disclosed comprising Group 4 transition metal precursors having the formula: wherein M is Ti, Zr, or Hf; each A is independently N, Si, B or P; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n>1; each R is independently a H or a C1-C4 hydrocarbon group; each L is independently a ?1 anionic ligand selected from the group consisting of NR?2, OR?, Cp, amidinate, ?-diketonate, or keto-iminate, wherein R? is a H or a C1-C4 hydrocarbon group; and L? is NR? or O, wherein R? is a H or a C1-C4 hydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.

Abstract: Group 4 transition metal-containing film forming compositions are disclosed. The Group 4 transition metal-containing film forming compositions comprise Group 4 transition metal precursors having the formula L2-M-C5R4—[(ER2)m-(ER2)n—O]—, wherein M is Ti, Zr, or Hf bonded in an ?5 bonding mode to the cyclopentadienyl group; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n>1; each R is independently a hydrogen or a C1-C4 hydrocarbon group; each L is independently a ?1 anionic ligand selected from the group consisting of NR?2, OR?, Cp, amidinate, ?-diketonate or keto-iminate, wherein R? is H or a C1-C4 hydrocarbon group; and adjacent R's may be joined to form a hydrocarbyl ring. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on the substrates via vapor deposition processes.

Abstract: Lanthanide-containing film forming compositions comprising Lanthanide precursors having the general formulae: wherein Ln is a Lanthanide; A is independently N, Si, B, P or O; each E is independently C, Si, B or P; m and n are independently 0, 1 or 2; m+n>1; each R is independently an H or a C1-C4 hydrocarbyl group; L is a ?1 anionic ligand selected from the group consisting of NR?2, OR?, Cp, amidinate, ?-diketonate, or keto-iminate, wherein R? is an H or a C1-C4 hydrocarbon group; and L? is NR? or O, wherein R? is an H or a C1-C4 hydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Lanthanide-containing films on one or more substrates via vapor deposition processes.

Abstract: Group 4 transition metal-containing film forming compositions comprising Group 4 transition metal precursors having the formula: wherein M is Ti, Zr, or Hf; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n>1; o and p is independently 0, 1 or 2; p>1; each R is independently hydrogen or a C1-C4 hydrocarbon group; each L is independently a ?1 anionic ligand selected from the group consisting of NR?2, OR?, Cp, amidinate, ?-diketonate or keto-iminate, wherein R? is a H or a C1-C4 hydrocarbon group; and each L? is independently NR? or O, wherein R? is a H or a C1-C4 hydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.

Abstract: Group 4 transition metal-containing film forming compositions comprising Group 4 transition metal precursors having the formula: wherein M is Ti, Zr, or Hf; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n>1; o and p is independently 0, 1 or 2; o+p>1; each R is independently hydrogen or or a C1-C4 hydrocarbon group; each L is independently a ?1 anionic ligand selected from the group consisting of NR?2, OR?, Cp, amidinate, ?-diketonate or keto-iminate, wherein R? is a H or a C1-C4 hydrocarbon group; and each L? is independently NR? or O, wherein R? is a H or a C1-C4 hydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.

Abstract: Group 4 transition metal-containing film forming compositions are disclosed comprising Group 4 transition metal precursors having the formula: wherein M is Ti, Zr, or Hf; each A is independently N, Si, B or P; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n>1; each R is independently a H or a C1-C4 hydrocarbon group; each L is independently a ?1 anionic ligand selected from the group consisting of NR?2, OR?, Cp, amidinate, ?-diketonate, or keto-iminate, wherein R? is a H or a C1-C4 hydrocarbon group; and L? is NR? or O, wherein R? is a H or a C1-C4 hydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.

Abstract: Group 4 transition metal-containing film forming compositions are disclosed. The Group 4 transition metal-containing film forming compositions comprise Group 4 transition metal precursors having the formula L2-M-C5R4-[(ER2)2—NR]—, wherein M is Ti, Zr, or Hf bonded in an ?5 bonding mode to the Cp group; each E is independently C, Si, B or P; each R is independently a hydrogen or a C1-C4 hydrocarbon group; and each L is independently a ?1 anionic ligand selected from the group consisting of NR?2, OR?, Cp, amidinate, ?-diketonate, or keto-iminate, wherein R? is a H or a C1-C4 hydrocarbon group and adjacent R?s may be joined to form a hydrocarbyl ring; provided that at least one R on the Cp is C1 to C4. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.

Abstract: Group 4 transition metal-containing film forming compositions are disclosed comprising Group 4 transition metal precursors having the formula: wherein M is Ti, Zr, or Hf; each A is independently N, Si, B or P; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n>1; each R is independently a H or a C1-C4 hydrocarbon group; each L is independently a ?1 anionic ligand selected from the group consisting of NR?2, OR?, Cp, amidinate, ?-diketonate, or keto-iminate, wherein R? is a H or a C1-C4 hydrocarbon group; and L? is NR? or O, wherein R? is a H or a C1-C4 hydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.

Abstract: Disclosed are Niobium-containing film forming compositions, methods of synthesizing the same, and methods of forming Niobium-containing films on one or more substrates via atomic layer deposition processes using the Niobium-containing film forming compositions.

Abstract: Disclosed are Group 5 transition metal-containing thin film forming precursors. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 5 transition metal-containing thin films on one or more substrates via vapor deposition processes.