Abstract: A suspension for a vehicle may include: a center leaf spring; side leaf springs respectively installed on opposing sides of the center leaf spring; and mounting brackets configured to connect the center leaf spring and the side leaf springs, respectively, and to support the center leaf spring to be movable in a longitudinal direction.

Abstract: A suspension for a vehicle may include: a main frame; a lower leaf spring installed on either side of the main frame; an upper leaf spring disposed above the lower leaf spring so as to be spaced apart from the lower leaf spring; a connection bracket supported by the upper leaf spring, and rotatably mounted on the main frame; an eye clip mounted on an end portion of the lower leaf spring, and connected to a wheel; and a rubber bush mounted on either side of the upper leaf spring, and connected to a vehicle body.

Abstract: A method for manufacturing a semiconductor device and a semiconductor device, the method including forming an active pattern on a substrate such that the active pattern includes sacrificial patterns and semiconductor patterns alternately and repeatedly stacked on the substrate; and forming first spacer patterns at both sides of each of the sacrificial patterns by performing an oxidation process, wherein the first spacer patterns correspond to oxidized portions of each of the sacrificial patterns, wherein the sacrificial patterns include a first semiconductor material containing impurities, wherein the semiconductor patterns include a second semiconductor material different from the first semiconductor material, and wherein the impurities include an element different from semiconductor elements of the first semiconductor material and the second semiconductor material.

Abstract: An image sensor includes a photoelectric converter configured to convert received light into charges in response to the received light and provide the charges to a first node, a transfer transistor configured to provide a voltage of the first node to a floating diffusion node, a reset transistor configured to reset a voltage of the floating diffusion node to a driving voltage based on a reset signal, a source follower transistor configured to provide a unit pixel output based on the voltage of the floating diffusion node, a select transistor connected to the source follower transistor and gated with a selection signal to output the unit pixel output to the outside, and a ferroelectric capacitor connected to the floating diffusion node, wherein the ferroelectric capacitor is configured to adjust a conversion gain of the floating diffusion node based on a conversion gain mode of the ferroelectric capacitor, the conversion gain mode being a first conversion gain mode, a second conversion gain mode, or a third co

Abstract: A semiconductor device includes a substrate including a first region and a second region, a first gate stack on the first region and including a first gate stacked insulating film and a first gate electrode on the first gate stacked insulating film, and a second gate stack on the second region and including a second gate stacked insulating film and a second gate electrode on the second gate stacked insulating film, wherein a width of the first gate stack is greater than a width of the second gate stack and the second gate stacked insulating film includes a plurality of ferroelectric material films.

Abstract: A semiconductor memory includes a bit line extending in a first direction, first and second active patterns, which are alternately disposed in the first direction and on the bit line, and each of which includes a horizontal portion and a vertical portion, first word lines disposed on the horizontal portions of the first active patterns to cross the bit line, second word lines disposed on the horizontal portions of the second active patterns to cross the bit line, and an intermediate structure provided in a first gap region between the first and second word lines or in a second gap region between the vertical portions of the first and second active patterns. The first and second active patterns, which are adjacent to each other, may be disposed to be symmetric with respect to each other.

Abstract: Aspects of the present inventive concept provide a semiconductor device capable of enhancing performance and reliability through source/drain engineering in a transistor including an oxide semiconductor layer. The semiconductor device includes a substrate, a metal oxide layer disposed on the substrate, a source/drain pattern being in contact with the metal oxide layer and including a portion protruding from a top surface of the metal oxide layer, a plurality of gate structures disposed on the metal oxide layer with the source/drain pattern interposed therebetween and each including gate spacers and an insulating material layer, the insulating material layer being in contact with the metal oxide layer, and not extending along a top surface of the source/drain pattern, and a contact disposed on the source/drain pattern, the contact being connected to the source/drain pattern.

Abstract: A semiconductor device includes a substrate including an active pattern, a channel pattern on the active pattern, the channel pattern including a plurality of semiconductor patterns that are spaced apart from each other and are vertically stacked, a source/drain pattern connected to the plurality of semiconductor patterns, a through pattern penetrating the source/drain pattern, a metal-semiconductor compound layer between the source/drain pattern and the through pattern, a gate electrode on the plurality of semiconductor patterns, the gate electrode including inner electrodes between adjacent semiconductor patterns of the plurality of semiconductor patterns and an outer electrode on an uppermost semiconductor pattern of the plurality of semiconductor patterns, an active contact on the through pattern, and a first metal layer on the active contact, the first metal layer including a power wiring and first wirings connected to the active contact.

Abstract: A leaf spring apparatus for a vehicle suspension includes a leaf spring, a carrier disposed on an end portion of the leaf spring and mounted on a wheel of a vehicle, a first connection unit connecting the end portion of the leaf spring and the carrier to each other, a cross member disposed on top of the leaf spring and supporting a body of the vehicle, and a second connection unit connecting the leaf spring and the cross member to each other.

Abstract: A semiconductor device includes a substrate including a first region and a second region, a first gate stack on the first region and including a first gate stacked insulating film and a first gate electrode on the first gate stacked insulating film, and a second gate stack on the second region and including a second gate stacked insulating film and a second gate electrode on the second gate stacked insulating film, wherein a width of the first gate stack is greater than a width of the second gate stack and the second gate stacked insulating film includes a plurality of ferroelectric material films.

Abstract: Disclosed are a vehicle suspension spring device and a vehicle suspension system having the same. The vehicle suspension spring device includes a leaf spring unit comprising at least one leaf spring disposed in a lateral direction of a vehicle, a pair of first coupling parts provided at opposite ends of the leaf spring unit in a longitudinal direction and rotatably coupled to a pair of axles on which opposite wheels of the vehicle are mounted, and a pair of second coupling parts provided at two points between the opposite ends of the leaf spring unit in the longitudinal direction to be rotatably coupled to a subframe of the vehicle.

Abstract: A semiconductor device can include a semiconductor substrate and an active region in the semiconductor substrate, where the active region can include an oxide semiconductor material having a variable atomic concentration of oxygen. A first source/drain region can be in the active region, where the first source/drain region can have a first atomic concentration of oxygen in the oxide semiconductor material. A second source/drain region can be in the active region spaced apart from first source/drain region and a channel region can be in the active region between the first source/drain region and the second source/drain region, where the channel region can have a second atomic concentration of oxygen in the oxide semiconductor material that is less than the first atomic concentration of oxygen. A gate electrode can be on the channel region and extend between the first source/drain region and the second source/drain region.

Abstract: A leaf spring device for a suspension system for a vehicle according to the present disclosure may include a center leaf spring, side leaf springs respectively disposed at two opposite sides of the center leaf spring, and bracket modules each including a center bracket configured to accommodate an end of the center leaf spring, and a side bracket connected to the center bracket and configured to accommodate an end of the side leaf spring.

Abstract: A semiconductor device includes a substrate including a first region and a second region, a first gate stack on the first region and including a first gate stacked insulating film and a first gate electrode on the first gate stacked insulating film, and a second gate stack on the second region and including a second gate stacked insulating film and a second gate electrode on the second gate stacked insulating film, wherein a width of the first gate stack is greater than a width of the second gate stack and the second gate stacked insulating film includes a plurality of ferroelectric material films.

Abstract: A leaf spring apparatus for a vehicle suspension includes a leaf spring, a carrier disposed on an end portion of the leaf spring and mounted on a wheel of a vehicle, a first connection unit connecting the end portion of the leaf spring and the carrier to each other, a cross member disposed on top of the leaf spring and supporting a body of the vehicle, and a second connection unit connecting the leaf spring and the cross member to each other.

Abstract: An image sensor includes a photoelectric converter configured to convert received light into charges in response to the received light and provide the charges to a first node, a transfer transistor configured to provide a voltage of the first node to a floating diffusion node, a reset transistor configured to reset a voltage of the floating diffusion node to a driving voltage based on a reset signal, a source follower transistor configured to provide a unit pixel output based on the voltage of the floating diffusion node, a select transistor connected to the source follower transistor and gated with a selection signal to output the unit pixel output to the outside, and a ferroelectric capacitor connected to the floating diffusion node, wherein the ferroelectric capacitor is configured to adjust a conversion gain of the floating diffusion node based on a conversion gain mode of the ferroelectric capacitor, the conversion gain mode being a first conversion gain mode, a second conversion gain mode, or a third co

Abstract: Disclosed are a vehicle suspension spring device and a vehicle suspension system having the same. The vehicle suspension spring device includes a leaf spring unit comprising at least one leaf spring disposed in a lateral direction of a vehicle, a pair of first coupling parts provided at opposite ends of the leaf spring unit in a longitudinal direction and rotatably coupled to a pair of axles on which opposite wheels of the vehicle are mounted, and a pair of second coupling parts provided at two points between the opposite ends of the leaf spring unit in the longitudinal direction to be rotatably coupled to a subframe of the vehicle.

Abstract: A semiconductor device includes a substrate, a first insulating layer on the substrate, source and drain patterns at spaced-apart locations on the first insulating layer, and a channel layer having a transition metal therein, such as a transition metal dichalcogenide. The channel layer extends on the first insulating layer and between the source and drain patterns. A second insulating layer is also provided, which extends on the channel layer and has a thickness less than a thickness of the first insulating layer. A gate structure is provided, which extends on the second insulating layer, and opposite the channel layer. The channel layer may include at least one of MoS2, WS2, MoSe2, WSe2, MoSe2, WTe2, and ZrSe2.

Abstract: Semiconductor devices having improved electrical characteristics are described, as are methods of fabricating the same. The semiconductor device may include a first gate electrode on a substrate and extending in a first direction, a second gate electrode on the substrate and running across the first gate electrode while extending in a second direction, and a channel structure between the second gate electrode and lateral surfaces in the second direction of the first gate electrode and between the second gate electrode and a top surface of the first gate electrode. The channel structure may include a first dielectric layer that covers in contact with the lateral surfaces and the top surface of the first gate electrode; a second dielectric layer on the first dielectric layer and in contact with the second gate electrode; and a channel layer between the first dielectric layer and the second dielectric layer.

Abstract: Aspects of the present inventive concept provide a semiconductor device capable of enhancing performance and reliability through source/drain engineering in a transistor including an oxide semiconductor layer. The semiconductor device includes a substrate, a metal oxide layer disposed on the substrate, a source/drain pattern being in contact with the metal oxide layer and including a portion protruding from a top surface of the metal oxide layer, a plurality of gate structures disposed on the metal oxide layer with the source/drain pattern interposed therebetween and each including gate spacers and an insulating material layer, the insulating material layer being in contact with the metal oxide layer, and not extending along a top surface of the source/drain pattern, and a contact disposed on the source/drain pattern, the contact being connected to the source/drain pattern.