Patents by Inventor Woo-chan Jung

Woo-chan Jung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7180129
    Abstract: A method of manufacturing an insulating layer that ensures reproducibility across like manufacturing apparatus. The insulating layer is formed on the substrate by (a) flowing an oxidizing gas at an oxidizing gas flow rate, (b) flowing a first carrier gas at a first carrier gas flow rate while carrying a first impurity including boron flowing at a first impurity flow rate, (c) flowing a second carrier gas at a second carrier gas flow rate while carrying a second impurity including phosphorus flowing at a second impurity flow rate, and (d) flowing a silicon source material at a silicon source flow rate. The second carrier gas flow rate is greater than the first carrier gas flow rate.
    Type: Grant
    Filed: September 30, 2003
    Date of Patent: February 20, 2007
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Woo-Chan Jung, Jin-Ho Jeon, Jeon-Sig Lim, Jong-Seung Yi
  • Publication number: 20050072991
    Abstract: A method of manufacturing an insulating layer that ensures reproducibility across like manufacturing apparatus. The insulating layer is formed on the substrate by (a) flowing an oxidizing gas at an oxidizing gas flow rate, (b) flowing a first carrier gas at a first carrier gas flow rate while carrying a first impurity including boron flowing at a first impurity flow rate, (c) flowing a second carrier gas at a second carrier gas flow rate while carrying a second impurity including phosphorus flowing at a second impurity flow rate, and (d) flowing a silicon source material at a silicon source flow rate. The second carrier gas flow rate is greater than the first carrier gas flow rate.
    Type: Application
    Filed: September 30, 2003
    Publication date: April 7, 2005
    Inventors: Woo-Chan Jung, Jin-Ho Jeon, Jeon-Sig Lim, Jong-Seung Yi
  • Patent number: 6867141
    Abstract: A method for fabricating a semiconductor device and forming an insulating film used therein, includes forming an isolation insulating film on a semiconductor wafer and forming gates, separated by gaps having a predetermined distance, on an active region. Next, a first interlayer dielectric film is deposited to a predetermined thickness on the semiconductor wafer having the gates, so that the gaps between the gates are not completely filled. Then, a sputtering etch is performed entirely on a surface of the first interlayer dielectric film. Thereafter, the first interlayer dielectric film is partially removed through isotropic etching. Next, a second interlayer dielectric film is deposited on the first interlayer dielectric film so that the gaps between the gates are completely filled.
    Type: Grant
    Filed: June 4, 2003
    Date of Patent: March 15, 2005
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Woo Chan Jung, Jong Koo Lee
  • Patent number: 6841851
    Abstract: A semiconductor device and a method for manufacturing the same, wherein a gate electrode structure is formed on a surface of a semiconductor substrate. Next, a gate poly oxide (GPOX) layer is deposited on a surface of the gate electrode structure and on the semiconductor substrate. Then, the surface of the semiconductor substrate is cleaned to remove any residue and the GPOX layer remaining on the semiconductor substrate. Next, an etch stopper is formed on the surface of the gate electrode structure and on the semiconductor substrate. Last, a high-density plasma (HDP) oxide layer is deposited on the etch stopper. The semiconductor device and method for manufacturing the same are capable of preventing bubble defects.
    Type: Grant
    Filed: May 30, 2003
    Date of Patent: January 11, 2005
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Woo-chan Jung
  • Patent number: 6730619
    Abstract: A method of manufacturing an insulating layer that ensures reproducibility across like manufacturing apparatus. The insulating layer is formed on the substrate by (a) flowing an oxidizing gas at an oxidizing gas flow rate, (b) flowing a first carrier gas at a first carrier gas flow rate while carrying a first impurity including boron flowing at a first impurity flow rate, (c) flowing a second carrier gas at a second carrier gas flow rate while carrying a second impurity including phosphorus flowing at a second impurity flow rate, and (d) flowing a silicon source material at a silicon source flow rate. The second carrier gas flow rate is greater than the first carrier gas flow rate.
    Type: Grant
    Filed: April 16, 2002
    Date of Patent: May 4, 2004
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Woo-Chan Jung, Jin-Ho Jeon, Jeon-Sig Lim, Jong-Seung Yi
  • Publication number: 20030207553
    Abstract: A method for fabricating a semiconductor device and forming an insulating film used therein, includes forming an isolation insulating film on a semiconductor wafer and forming gates, separated by gaps having a predetermined distance, on an active region. Next, a first interlayer dielectric film is deposited to a predetermined thickness on the semiconductor wafer having the gates, so that the gaps between the gates are not completely filled. Then, a sputtering etch is performed entirely on a surface of the first interlayer dielectric film. Thereafter, the first interlayer dielectric film is partially removed through isotropic etching. Next, a second interlayer dielectric film is deposited on the first interlayer dielectric film so that the gaps between the gates are completely filled.
    Type: Application
    Filed: June 4, 2003
    Publication date: November 6, 2003
    Inventors: Woo Chan Jung, Jong Koo Lee
  • Publication number: 20030205784
    Abstract: A semiconductor device and a method for manufacturing the same, wherein a gate electrode structure is formed on a surface of a semiconductor substrate. Next, a gate poly oxide (GPOX) layer is deposited on a surface of the gate electrode structure and on the semiconductor substrate. Then, the surface of the semiconductor substrate is cleaned to remove any residue and the GPOX layer remaining on the semiconductor substrate. Next, an etch stopper is formed on the surface of the gate electrode structure and on the semiconductor substrate. Last, a high-density plasma (HDP) oxide layer is deposited on the etch stopper. The semiconductor device and method for manufacturing the same are capable of preventing bubble defects.
    Type: Application
    Filed: May 30, 2003
    Publication date: November 6, 2003
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Woo-chan Jung
  • Patent number: 6617259
    Abstract: A method for fabricating a semiconductor device and forming an insulating film used therein, includes forming an isolation insulating film on a semiconductor wafer and forming gates, separated by gaps having a predetermined distance, on an active region. Next, a first interlayer dielectric film is deposited to a predetermined thickness on the semiconductor wafer having the gates, so that the gaps between the gates are not completely filled. Then, a sputtering etch is performed entirely on a surface of the first interlayer dielectric film. Thereafter, the first interlayer dielectric film is partially removed through isotropic etching. Next, a second interlayer dielectric film is deposited on the first interlayer dielectric film so that the gaps between the gates are completely filled.
    Type: Grant
    Filed: May 8, 2002
    Date of Patent: September 9, 2003
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Woo Chan Jung, Jong Koo Lee
  • Patent number: 6599792
    Abstract: A semiconductor device and a method for manufacturing the same, wherein a gate electrode structure is formed on a surface of a semiconductor substrate. Next, a gate poly oxide (GPOX) layer is deposited on a surface of the gate electrode structure and on the semiconductor substrate. Then, the surface of the semiconductor substrate is cleaned to remove any residue and the GPOX layer remaining on the semiconductor substrate. Next, an etch stopper is formed on the surface of the gate electrode structure and on the semiconductor substrate. Last, a high-density plasma (HDP) oxide layer is deposited on the etch stopper. The semiconductor device and method for manufacturing the same are capable of preventing bubble defects.
    Type: Grant
    Filed: July 29, 2002
    Date of Patent: July 29, 2003
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Woo-chan Jung
  • Publication number: 20030030077
    Abstract: A semiconductor device and a method for manufacturing the same, wherein a gate electrode structure is formed on a surface of a semiconductor substrate. Next, a gate poly oxide (GPOX) layer is deposited on a surface of the gate electrode structure and on the semiconductor substrate. Then, the surface of the semiconductor substrate is cleaned to remove any residue and the GPOX layer remaining on the semiconductor substrate. Next, an etch stopper is formed on the surface of the gate electrode structure and on the semiconductor substrate. Last, a high-density plasma (HDP) oxide layer is deposited on the etch stopper. The semiconductor device and method for manufacturing the same are capable of preventing bubble defects.
    Type: Application
    Filed: July 29, 2002
    Publication date: February 13, 2003
    Inventor: Woo-Chan Jung
  • Publication number: 20030008492
    Abstract: A method for fabricating a semiconductor device and forming an insulating film used therein, includes forming an isolation insulating film on a semiconductor wafer and forming gates, separated by gaps having a predetermined distance, on an active region. Next, a first interlayer dielectric film is deposited to a predetermined thickness on the semiconductor wafer having the gates, so that the gaps between the gates are not completely filled. Then, a sputtering etch is performed entirely on a surface of the first interlayer dielectric film. Thereafter, the first interlayer dielectric film is partially removed through isotropic etching. Next, a second interlayer dielectric film is deposited on the first interlayer dielectric film so that the gaps between the gates are completely filled.
    Type: Application
    Filed: May 8, 2002
    Publication date: January 9, 2003
    Inventors: Woo Chan Jung, Jong Koo Lee
  • Publication number: 20020130385
    Abstract: A method of manufacturing an insulating layer that ensures reproducibility across like manufacturing apparatus. The insulating layer is formed on the substrate by (a) flowing an oxidizing gas at an oxidizing gas flow rate, (b) flowing a first carrier gas at a first carrier gas flow rate while carrying a first impurity including boron flowing at a first impurity flow rate, (c) flowing a second carrier gas at a second carrier gas flow rate while carrying a second impurity including phosphorus flowing at a second impurity flow rate, and (d) flowing a silicon source material at a silicon source flow rate. The second carrier gas flow rate is greater than the first carrier gas flow rate.
    Type: Application
    Filed: April 16, 2002
    Publication date: September 19, 2002
    Inventors: Woo-Chan Jung, Jin-Ho Jeon, Jeon-Sig Lim, Jong-Seung Yi
  • Publication number: 20020068467
    Abstract: A method of fabricating a PE-SiON film includes forming a PE-SiON film by turning on a high frequency radio frequency (HF RF) power in the chamber after a plurality of reaction gases SiH4, N2, NH3, N2O have simultaneously flown into a chamber without proceeding a bypass process of SiH4.
    Type: Application
    Filed: June 21, 2001
    Publication date: June 6, 2002
    Inventors: Woo-Chan Jung, Jin-Ho Jeon, Jeon-Sig Lim, Jong-Seung Yi, Kyung-Tae Kim