Abstract: A deposition system which is configured to enable improved temperature uniformity of a heated substrate may include a susceptor provided in a chamber to hold a substrate, a reflection housing provided outside the chamber, a heating module including light sources provided in the reflection housing, and a reflection control module provided in the reflection housing between the heat sources and the chamber. The reflection control module may be configured to reflect light, which propagates along a first trajectory from the light sources toward a center region of the substrate, to propagate along a second trajectory toward an edge region of the substrate, thereby providing improved substrate irradiance uniformity and thus improved substrate temperature uniformity. Improved substrate temperature uniformity may result in improved thickness uniformity of layers provided on the substrate in a deposition process.

Abstract: A method for manufacturing a thin film transistor substrate, the method can include a first mask process for forming a gate electrode on a substrate; a step for forming a gate insulating layer covering the gate electrode; a second mask process for forming a source electrode overlapping with one side of the gate electrode, and a drain electrode overlapping with other side of the gate electrode and being apart from the source electrode, on the gate insulating layer; and a third mask process for forming an oxide semiconductor layer extending from the source electrode to the drain electrode, and an etch stopper having the same shape and size with the oxide semiconductor layer on the oxide semiconductor layer.

Abstract: Discussed are an organic light emitting diode display which can minimize a malfunction due to an open failure caused in a fabricating process of the organic light emitting diode display using thin film transistors as control elements, and fabricating and inspecting method of the organic light emitting diode display. Accordingly, at least one contact part is further formed by forming an upper metal layer of a dual gate structure with respect to an area in which an open failure easily occurs due to a step difference on a substrate of the organic light emitting diode display, so that a signal can be normally applied even when the open failure occurs.

Abstract: A deposition system which is configured to enable improved temperature uniformity of a heated substrate may include a susceptor provided in a chamber to hold a substrate, a reflection housing provided outside the chamber, a heating module including light sources provided in the reflection housing, and a reflection control module provided in the reflection housing between the heat sources and the chamber. The reflection control module may be configured to reflect light, which propagates along a first trajectory from the light sources toward a center region of the substrate, to propagate along a second trajectory toward an edge region of the substrate, thereby providing improved substrate irradiance uniformity and thus improved substrate temperature uniformity. Improved substrate temperature uniformity may result in improved thickness uniformity of layers provided on the substrate in a deposition process.

Abstract: A method for manufacturing a thin film transistor substrate, the method can include a first mask process for forming a gate electrode on a substrate; a step for forming a gate insulating layer covering the gate electrode; a second mask process for forming a source electrode overlapping with one side of the gate electrode, and a drain electrode overlapping with other side of the gate electrode and being apart from the source electrode, on the gate insulating layer; and a third mask process for forming an oxide semiconductor layer extending from the source electrode to the drain electrode, and an etch stopper having the same shape and size with the oxide semiconductor layer on the oxide semiconductor layer.

Abstract: The present disclosure relates to a thin film transistor substrate having a metal oxide semiconductor for flat panel displays and a method for manufacturing the same. The present disclosure suggests a thin film transistor substrate including: a gate electrode on a substrate; a gate insulating layer covering the gate electrode; a source electrode overlapping with one side of the gate electrode on the gate insulating layer; a drain electrode being apart from the source electrode and overlapping with other side of the gate electrode on the gate insulating layer; an oxide semiconductor layer contacting an upper surface of the source electrode and the drain electrode, and extending from the source electrode to the drain electrode; and an etch stopper having the same shape with the oxide semiconductor layer, and contacting an upper surface of the oxide semiconductor layer.

Abstract: Discussed are an organic light emitting diode display which can minimize a malfunction due to an open failure caused in a fabricating process of the organic light emitting diode display using thin film transistors as control elements, and fabricating and inspecting method of the organic light emitting diode display. Accordingly, at least one contact part is further formed by forming an upper metal layer of a dual gate structure with respect to an area in which an open failure easily occurs due to a step difference on a substrate of the organic light emitting diode display, so that a signal can be normally applied even when the open failure occurs.

Abstract: The present disclosure relates to a thin film transistor substrate having a metal oxide semiconductor for flat panel displays and a method for manufacturing the same. The present disclosure suggests a thin film transistor substrate including: a gate electrode on a substrate; a gate insulating layer covering the gate electrode; a source electrode overlapping with one side of the gate electrode on the gate insulating layer; a drain electrode being apart from the source electrode and overlapping with other side of the gate electrode on the gate insulating layer; an oxide semiconductor layer contacting an upper surface of the source electrode and the drain electrode, and extending from the source electrode to the drain electrode; and an etch stopper having the same shape with the oxide semiconductor layer, and contacting an upper surface of the oxide semiconductor layer.

Abstract: A disk drive that has an air deflector which deflects at least a portion of airflow away from an actuator arm assembly of the drive. The air flow is typically generated by a rotating disk of the disk drive.

Abstract: A disk drive that has an air deflector which deflects at least a portion of airflow away from an actuator arm assembly of the drive. The air flow is typically generated by a rotating disk of the disk drive.

Abstract: A hard disk drive that includes a wave stringer. The wave stringer can attenuate energy which propagates through a base plate of the disk drive. The wave stringer may be designed by initially analyzing propagation patterns of both acoustic and shock waves applied to the drive. The wave stringer is then designed, constructed and assembled to the disk drive to attenuate critical frequencies at weak points of the disk drive. The wave stringer may have a plurality of ribs designed to vary the mechanical impedance of the drive to attenuate the propagated energy.

Abstract: A disk drive that has an air deflector which deflects at least a portion of airflow away from an actuator arm assembly of the drive. The air flow is typically generated by a rotating disk of the disk drive.

Abstract: A disk drive that has an air deflector which deflects at least a portion of airflow away from an actuator arm assembly of the drive. The air flow is typically generated by a rotating disk of the disk drive.