Patents by Inventor Woo Chung

Woo Chung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor devices and methods for fabricating the same
    Patent number: 9184136
    Abstract: A method of fabricating a semiconductor device includes providing a semiconductor substrate having a first surface and a second surface opposite the first surface, forming an alignment key and a connection contact that penetrate a portion of the semiconductor substrate and extend from the first surface toward the second surface, forming a first circuit on the first surface of the semiconductor substrate such that the first circuit is electrically connected to the connection contact, recessing the second surface of the semiconductor substrate to form a third surface exposing the alignment key and the connection contact, and forming a second circuit on the third surface of the semiconductor substrate such that the second circuit is electrically connected to the connection contact.
    Type: Grant
    Filed: December 27, 2013
    Date of Patent: November 10, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jiyoung Kim, Daeik Kim, Kang-Uk Kim, Nara Kim, Jemin Park, Kyuhyun Lee, Hyun-Woo Chung, Gyoyoung Jin, HyeongSun Hong, Yoosang Hwang
  • Menu display method of mobile terminal
    Patent number: 9182911
    Abstract: A mobile terminal including a display having a menu display portion configured to display a menu group among a plurality of menu groups that are arranged in a same planar surface, a handler mechanism configured to traverse through the plurality of menu groups, and a controller configured to select one menu group among the plurality of menu groups to be displayed in the menu display portion based on a manipulation of the handler mechanism.
    Type: Grant
    Filed: February 25, 2009
    Date of Patent: November 10, 2015
    Assignee: LG ELECTRONICS INC.
    Inventors: Jun-Serk Park, Mee-Yeon Choi, Dong-Seok Lee, Byoung-Nam Lee, Jin-Woo Chung
  • Top-feeding double-swirl type gasifier
    Patent number: 9170018
    Abstract: The present invention provides a top-feeding double-swirl type gasifier: a feed line through which pulverized coal is supplied by nitrogen; a distributor for dividing the pulverized coal supplied; a plurality of burner nozzles for supplying the pulverized coal, divided in the distributor, and an oxidizer; a pressure reactor in which the pulverized coal and the oxidizer react with each other to produce a flow of synthesis gas; and a swirl generator for imparting a swirling force to the oxidizer which is fed into the pressure reactor, the gasifier further comprising a slag cooling and storing container placed beneath the pressure reactor. Each of the burner nozzles consists of a triple tube having a circular cross section. The pulverized coal and carrier gas are supplied to the most central region of the burner nozzle, and an oxidizer is supplied to an annular region 34 surrounding the central region.
    Type: Grant
    Filed: December 10, 2010
    Date of Patent: October 27, 2015
    Assignee: SK INNOVATION CO., LTD.
    Inventors: Jin Wook Lee, Seok Woo Chung, Young Don Yoo, Yongseung Yun, Sam Ryong Park, Gyoo Tae Kim, Yong Il Lee
  • Semiconductor devices and methods for manufacturing the same
    Patent number: 9165935
    Abstract: A semiconductor device includes a semiconductor substrate including first trenches defining outer sidewalls of a pair of active pillars and a second trench defining opposing inner sidewalls of the pair of active pillars. The second trench may have a bottom surface located at a higher level than bottom surface of the first trench. Auxiliary conductive lines may be disposed in the first trenches to cover and cross the outer sidewalls of the pair of active pillars. A pair of main conductive lines may be disposed in a pair of recessed regions that are laterally recessed from lower portions of the inner sidewalls of the active pillars into the pair of active pillars. A common impurity region may be disposed in the semiconductor substrate under the second trench. Upper impurity regions may be disposed in upper portions of the active pillars.
    Type: Grant
    Filed: June 26, 2012
    Date of Patent: October 20, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyun-Woo Chung, Jiyoung Kim, Yongchul Oh, Sungkwan Choi, Yoosang Hwang
  • Methods of forming wirings in electronic devices
    Patent number: 9153487
    Abstract: A method of forming a wiring may include forming a first wire on a substrate; forming a material layer on the substrate, except on the first wire; forming a surface treatment film on the material layer; and forming a second wire on the first wire. The surface treatment film has physical properties opposite to the first wire. A method of forming a wiring may include forming a first wire on a substrate; forming a material layer on the substrate and the first wire; removing a portion of the material layer from the first wire; forming a surface treatment film on the material layer and the first wire; removing a portion of the surface treatment film from the first wire; and forming a second wire on the first wire. A thickness of the material layer on the substrate is greater than a thickness of the first wire on the substrate.
    Type: Grant
    Filed: August 31, 2012
    Date of Patent: October 6, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seung-ho Lee, Young-ki Hong, Sung-gyu Kang, Joong-hyuk Kim, Jae-woo Chung
  • METHOD OF PREPARING GRAPHENE-GRAPHENE FUSED MATERIAL AND METHOD OF PREPARING GRAPHENE-SUBSTRATE COMPOSITE USING THE SAME
    Publication number: 20150280207
    Abstract: The present invention relates to a method of preparing a graphene-substrate composite using a graphene-graphene fused material. The method of preparing a graphene-substrate composite includes (a) forming a nano graphene-metal fused material comprised of nano-graphene and nano metal, (b) thermally treating the plurality of nano graphene-metal fused materials at a temperature higher than a melting point of the nano metal to connect the plurality of nano graphene-metal fused materials to each other by a melting bonding of the nano metal to form a graphene-graphene fused material, (c) pulverizing the graphene-graphene fused material to form a graphene-graphene fused material powder, and (d) dispersing the graphene-graphene fused material powder in a substrate to form a graphene-substrate composite.
    Type: Application
    Filed: March 26, 2014
    Publication date: October 1, 2015
    Applicant: NANO CAST TECH Co., Ltd.
    Inventors: Jae Woo CHUNG, Jung Hyun KIM
  • Semiconductor devices having balancing capacitor and methods of forming the same
    Patent number: 9117696
    Abstract: A semiconductor memory device includes a substrate including cell block, a balancing block, and a sense block. A plurality of cell bit lines are formed in the cell block of. A plurality of cell plugs are formed adjacent to side surfaces of the bit lines. Cell inner spacers, air spacers, and cell outer spacers are formed between the cell bit lines and the cell plugs. A plurality of balancing bit lines are formed in the balancing block. A plurality of balancing plugs are formed adjacent to side surfaces of the balancing bit lines. Balancing inner spacers and balancing outer spacers are formed between the balancing bit lines and the balancing plugs. The balancing bit lines and at least some of the cell bit lines are connected to the sense block.
    Type: Grant
    Filed: November 12, 2013
    Date of Patent: August 25, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jong-Un Kim, Yoo-Sang Hwang, Hyun-Woo Chung
  • STAINLESS SEPARATOR FOR FUEL CELL AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20150236357
    Abstract: A stainless steel separator for fuel cells and a method of manufacturing the same are disclosed. The method includes preparing a stainless steel sheet as a matrix, performing surface modification on a surface of the stainless steel sheet to form a Cr-rich passive film having a comparatively increased amount of Cr in a superficial layer of the stainless steel sheet by decreasing an amount of Fe in the superficial layer of the stainless steel sheet, and forming a coating layer on the surface of the surface-modified stainless steel sheet. The coating layer is one selected from a metal nitride layer (MNx), a metal/metal nitride layer (M/MNx), a metal carbide layer (MCy), and a metal boride layer (MB) (where 0.5?x?1, 0.42?y?1, 0.5?z?2).
    Type: Application
    Filed: April 30, 2015
    Publication date: August 20, 2015
    Inventors: Yoo Taek JEON, Kyeong Woo CHUNG
  • STAINLESS SEPARATOR FOR FUEL CELL AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20150236319
    Abstract: A stainless steel separator for fuel cells and a method of manufacturing the same are disclosed. The method includes preparing a stainless steel sheet as a matrix, performing surface modification on a surface of the stainless steel sheet to form a Cr-rich passive film having a comparatively increased amount of Cr in a superficial layer of the stainless steel sheet by decreasing an amount of Fe in the superficial layer of the stainless steel sheet, and forming a coating layer on the surface of the surface-modified stainless steel sheet. The coating layer is one selected from a metal nitride layer (MNx), a metal/metal nitride layer (M/MNx), a metal carbide layer (MCy), and a metal boride layer (MBz) (where 0.5?x?1, 0.42?y?1, 0.5?z?2).
    Type: Application
    Filed: April 30, 2015
    Publication date: August 20, 2015
    Inventors: Yoo Taek JEON, Kyeong Woo CHUNG
  • STAINLESS SEPARATOR FOR FUEL CELL AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20150236356
    Abstract: A stainless steel separator for fuel cells and a method of manufacturing the same are disclosed. The method includes preparing a stainless steel sheet as a matrix, performing surface modification on a surface of the stainless steel sheet to form a Cr-rich passive film having a comparatively increased amount of Cr in a superficial layer of the stainless steel sheet by decreasing an amount of Fe in the superficial layer of the stainless steel sheet, and forming a coating layer on the surface of the surface-modified stainless steel sheet. The coating layer is one selected from a metal nitride layer (MNx), a metal/metal nitride layer (M/MNx), a metal carbide layer (MCy), and a metal boride layer (MBz) (where 0.5?x?1, 0.42?y?1, 0.5?z?2).
    Type: Application
    Filed: April 30, 2015
    Publication date: August 20, 2015
    Inventors: Yoo Taek JEON, Kyeong Woo CHUNG
  • Semiconductor devices with vertical channel transistors
    Patent number: 9111960
    Abstract: Semiconductor devices with vertical channel transistors, the devices including semiconductor patterns disposed on a substrate, first gate patterns disposed between the semiconductor patterns on the substrate, a second gate pattern spaced apart from the first gate patterns by the semiconductor patterns, and conductive lines crossing the first gate patterns. The second gate pattern includes a first portion extending parallel to the first gate patterns and a second portion extending parallel to the conductive lines.
    Type: Grant
    Filed: September 23, 2011
    Date of Patent: August 18, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hui-Jung Kim, Yongchul Oh, Daeik Kim, Hyun-Woo Chung
  • Semiconductor device
    Patent number: 9087728
    Abstract: A method of manufacturing a semiconductor device includes forming device isolation layer in a substrate to define active regions of which each has first regions and a second region between the first regions, forming a first trench and a pair of second trenches in the substrate, and forming gates in the second trenches, respectively. The first trench extends in a first direction and crosses the active regions and the device isolation layer. The second trenches are connected to a bottom of the first trench and extend in the first direction at both sides of the second regions.
    Type: Grant
    Filed: December 5, 2013
    Date of Patent: July 21, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyun-Woo Chung, Jiyoung Kim, Yoosang Hwang
  • Stainless separator for fuel cell and method of manufacturing the same
    Patent number: 9070907
    Abstract: A stainless steel separator for fuel cells and a method of manufacturing the same are disclosed. The method includes preparing a stainless steel sheet as a matrix, performing surface modification on a surface of the stainless steel sheet to form a Cr-rich passive film having a comparatively increased amount of Cr in a superficial layer of the stainless steel sheet by decreasing an amount of Fe in the superficial layer of the stainless steel sheet, and forming a coating layer on the surface of the surface-modified stainless steel sheet. The coating layer is one selected from a metal nitride layer (MNx), a metal/metal nitride layer (M/MNx), a metal carbide layer (MCy), and a metal boride layer (MBz) (where 0.5?x?1, 0.42?y?1, 0.5?z?2).
    Type: Grant
    Filed: April 17, 2009
    Date of Patent: June 30, 2015
    Assignee: HYUNDAI HYSCO
    Inventors: Yoo Taek Jeon, Kyeong Woo Chung
  • SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    Publication number: 20150179574
    Abstract: According to a method of fabricating a semiconductor device, a first mask pattern is used to etch first device isolation layers and active lines or form grooves, in which word lines will be provided. Thereafter, the active lines are etched in a self-alignment manner by using the first mask pattern as an etch mask. As a result, it is possible to suppress mask misalignment from occurring.
    Type: Application
    Filed: February 10, 2015
    Publication date: June 25, 2015
    Inventors: Jay-Bok CHOI, Jiyoung KIM, Hyun-Woo CHUNG, Sungkwan CHOI, Yoosang HWANG
  • METHOD OF DRIVING DISPLAY PANEL AND DISPLAY APPARATUS FOR PERFORMING THE SAME
    Publication number: 20150170598
    Abstract: A method of driving a display panel includes comparing a previous frame data and a present frame data, outputting an inversion control signal of the present frame based on a result of the comparing the previous frame data and the present frame data, generating a positive pixel voltage and a negative pixel voltage based on the inversion control signal and displaying an image based on the positive pixel voltage and the negative pixel voltage.
    Type: Application
    Filed: May 30, 2014
    Publication date: June 18, 2015
    Applicant: Samsung Display Co., LTD.
    Inventors: Bong-Chool JEON, Yun-Tae KIM, Choong-Hwa KIM, Chae-Woo CHUNG, Ki-Hyun PYUN, Eun-Bum PYUN
  • Inkjet printing device and method of driving the same
    Patent number: 9050793
    Abstract: An inkjet printing device includes a flow path plate comprising a manifold to supply ink, a pressure chamber filled with the ink supplied from the manifold, and a nozzle via which the ink is ejected, a piezoelectric actuator which is disposed on a top surface of the flow path plate and includes a lower electrode, a piezoelectric layer, and an upper electrode that are stacked sequentially, a first electrostatic electrode to generate an electrostatic field, and a second electrostatic electrode which is disposed a predetermined distance apart from a bottom surface of the flow path plate to generate the electrostatic field between the first electrostatic electrode and the second electrostatic electrode.
    Type: Grant
    Filed: April 22, 2008
    Date of Patent: June 9, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD
    Inventors: Jae-woo Chung, Young-ki Hong, Sung-gyu Kang
  • METHOD OF LEACHING MOLYBDENUM FROM SULFIDE MINERAL CONTAINING MOLYBDENUM AND COPPER THROUGH ELECTROLYTIC OXIDATION SCHEME
    Publication number: 20150122667
    Abstract: Disclosed is a method of leaching molybdenum (Mo) from the sulfide mineral containing molybdenum (Mo) and copper (Cu) through the electrolytic oxidation scheme. The method includes dipping the sulfide mineral containing the molybdenum (Mo) and the copper (Cu) into a solution having chloride dissolved therein, loading an electrode into the solution, and then applying a current to the solution.
    Type: Application
    Filed: November 26, 2013
    Publication date: May 7, 2015
    Applicant: KOREA INSTITUTE OF GEOSCIENCE AND MINERAL RESOURCES
    Inventors: Kyeong-Woo CHUNG, Hyung-Kyu PARK, Ho-Sung YOON, Chul-Joo KIM, Shun-Myung SHIN
  • METHOD OF RECOVERING RARE EARTH ELEMENTS FROM OXIDIZED SCRAP OF PERMANENT MAGNET
    Publication number: 20150122084
    Abstract: Disclosed is a method of recovering a rare earth element from oxidized scrap of permanent magnet. The method includes leaching an oxidized scrap of a permanent magnet from a sulfuric acid solution, and recovering the rare earth element after precipitating the rare earth element contained in the oxidized scrap of the permanent magnet by adding sodium sulfate into the sulfuric acid solution.
    Type: Application
    Filed: May 23, 2014
    Publication date: May 7, 2015
    Applicant: KOREA INSTITUTE OF GEOSCIENCE AND MINERAL RESOURCES
    Inventors: Ho-Sung YOON, Chul-Joo KIM, Kyeong-Woo CHUNG
  • Methods of forming patterns on a substrate
    Patent number: 9018036
    Abstract: A method of forming patterns on a substrate, the method including: placing a mask having an opening defining a portion of one surface of a substrate on which patterns are to be formed on the substrate; forming a first modification layer in the opening by ejecting a surface modification ink onto a surface of the substrate through the opening; ejecting a target ink having droplets of sizes larger than those of a surface modification ink such that the target ink is distributed on the first modification layer in the opening; and removing the mask.
    Type: Grant
    Filed: April 17, 2012
    Date of Patent: April 28, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Joong-hyuk Kim, Sung-gyu Kang, Seung-ho Lee, Jae-woo Chung, Young-ki Hong
  • Semiconductor devices including a vertical channel transistor and methods of fabricating the same
    Patent number: 8987811
    Abstract: According to example embodiments, a semiconductor device includes a plurality of active pillars protruding from a substrate. Each active pillar includes a channel region between upper and lower doped regions. A contact gate electrode faces the channel region and is connected to a word line. The word line extends in a first direction. A bit line is connected to the lower doped region and extends in a second direction. The semiconductor device further includes a string body connection portion that connects the channel region of at least two adjacent active pillars of the plurality of active pillars.
    Type: Grant
    Filed: August 17, 2012
    Date of Patent: March 24, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hak-soo Yu, Chulwoo Park, Hyun-Woo Chung, Sua Kim, Hyunho Choi, Hongsun Hwang