Abstract: A multi-chip package may include a package substrate, a first semiconductor chip, a second semiconductor chip and a supporting member. The first semiconductor chip may be arranged on an upper surface of the package substrate. The first semiconductor chip may be electrically connected with the package substrate. The second semiconductor chip may be arranged on an upper surface of the first semiconductor chip. The second semiconductor chip may be electrically connected with the first semiconductor chip. The second semiconductor chip may have a protrusion overhanging an area beyond a side surface of the first semiconductor chip. The supporting member may be interposed between the protrusion of the second semiconductor chip and the package substrate to prevent a deflection of the protrusion. Thus, the protrusion may not be deflected.

Abstract: A three-dimensional (3D) semiconductor device may include a stack of chips, including a master chip and one or more slave chips. I/O connections of slave chips need not be connected to channels on a motherboard, and only electrode pads of a master chip may be connected to the channels. Only the master chip may provide a load to the channels. A through-substrate via (TSV) boundary may be set on a data input path, a data output path, an address/command path, and/or a clock path of a semiconductor device in which the same type of semiconductor chips are stacked.

Abstract: A semiconductor package includes a circuit board comprising a first surface and a second surface opposite the first surface. A first semiconductor chip is stacked on the first surface and a second semiconductor chip stacked on the first semiconductor chip. A region of the second chip protrudes beyond a side of the first semiconductor chip. A support underpins the protruding region of the second chip. The support may be, for example, dry film solder resist dam.

Abstract: The product advertisement management system is connected to an online marketplace and a marketplace system. An input interface unit receives advertisement bidding information which comprises a product number and a bidding price. An advertisement processing unit combines the advertisement bidding information with data of an advertiser product database (DB). A category-keyword matching unit receives product click information which comprises an input keyword, product categories and the numbers of product clicks and selects a matching category which is to be matched with the input keyword. A control unit displays product information, which corresponds to the matching category matched with a search keyword of the online marketplace or corresponds to a search category, in order of bidding price. The category-keyword matching unit selects a product category with a largest number of product clicks as the matching category among the product categories having the input keyword same.

Abstract: A multi-chip package may include a package substrate, a first semiconductor chip, a second semiconductor chip and a supporting member. The first semiconductor chip may be arranged on an upper surface of the package substrate. The first semiconductor chip may be electrically connected with the package substrate. The second semiconductor chip may be arranged on an upper surface of the first semiconductor chip. The second semiconductor chip may be electrically connected with the first semiconductor chip. The second semiconductor chip may have a protrusion overhanging an area beyond a side surface of the first semiconductor chip. The supporting member may be interposed between the protrusion of the second semiconductor chip and the package substrate to prevent a deflection of the protrusion. Thus, the protrusion may not be deflected.

Abstract: A three-dimensional (3D) semiconductor device may include a stack of chips, including a master chip and one or more slave chips. I/O connections of slave chips need not be connected to channels on a motherboard, and only electrode pads of a master chip may be connected to the channels. Only the master chip may provide a load to the channels. A through-substrate via (TSV) boundary may be set on a data input path, a data output path, an address/command path, and/or a clock path of a semiconductor device in which the same type of semiconductor chips are stacked.

Abstract: A three-dimensional (3D) semiconductor device may include a stack of chips, including a master chip and one or more slave chips. I/O connections of slave chips need not be connected to channels on a motherboard, and only electrode pads of a master chip may be connected to the channels. Only the master chip may provide a load to the channels. A through-substrate via (TSV) boundary may be set on a data input path, a data output path, an address/command path, and/or a clock path of a semiconductor device in which the same type of semiconductor chips are stacked.

Abstract: A multi-chip package may include a package substrate, a first semiconductor chip, a second semiconductor chip and a supporting member. The first semiconductor chip may be arranged on an upper surface of the package substrate. The first semiconductor chip may be electrically connected with the package substrate. The second semiconductor chip may be arranged on an upper surface of the first semiconductor chip. The second semiconductor chip may be electrically connected with the first semiconductor chip. The second semiconductor chip may have a protrusion overhanging an area beyond a side surface of the first semiconductor chip. The supporting member may be interposed between the protrusion of the second semiconductor chip and the package substrate to prevent a deflection of the protrusion.

Abstract: A semiconductor package includes a circuit board comprising a first surface and a second surface opposite the first surface. A first semiconductor chip is stacked on the first surface and a second semiconductor chip stacked on the first semiconductor chip. A region of the second chip protrudes beyond a side of the first semiconductor chip. A support underpins the protruding region of the second chip. The support may be, for example, dry film solder resist dam.

Abstract: A semiconductor device having semiconductor chips of different thicknesses is provided. The semiconductor device may include a first semiconductor chip, a sub-board on a first side of the first semiconductor chip, at least one second semiconductor chip on a second side of the first semiconductor chip, at least one external contact terminal on the at least one second semiconductor chip. In example embodiments the at least one second semiconductor chip may include a plurality of through silicon vias and the at least one external contact terminal may be in electrical contact with the first semiconductor chip and the at least one second semiconductor chip via the plurality of through silicon vias. In example embodiments, the at least one second semiconductor chip may be thinner than the first semiconductor chip.

Abstract: Provided is a semiconductor package comprising a substrate, a semiconductor chip formed on the substrate, and an interposer including a plurality of segments which are separated from each other and arranged on the substrate to surround the semiconductor chip. And a stacked package for multiple chips including the semiconductor package with a plurality of segments of an interposer is provided.

Abstract: A multi-chip package may include a package substrate, a first semiconductor chip, a second semiconductor chip and a supporting member. The first semiconductor chip may be arranged on an upper surface of the package substrate. The first semiconductor chip may be electrically connected with the package substrate. The second semiconductor chip may be arranged on an upper surface of the first semiconductor chip. The second semiconductor chip may be electrically connected with the first semiconductor chip. The second semiconductor chip may have a protrusion overhanging an area beyond a side surface of the first semiconductor chip. The supporting member may be interposed between the protrusion of the second semiconductor chip and the package substrate to prevent a deflection of the protrusion. Thus, the protrusion may not be deflected.

Abstract: A three-dimensional (3D) semiconductor device may include a stack of chips, including a master chip and one or more slave chips. I/O connections of slave chips need not be connected to channels on a motherboard, and only electrode pads of a master chip may be connected to the channels. Only the master chip may provide a load to the channels. A through-substrate via (TSV) boundary may be set on a data input path, a data output path, an address/command path, and/or a clock path of a semiconductor device in which the same type of semiconductor chips are stacked.

Abstract: A semiconductor device having semiconductor chips of different thicknesses is provided. The semiconductor device may include a first semiconductor chip, a sub-board on a first side of the first semiconductor chip, at least one second semiconductor chip on a second side of the first semiconductor chip, at least one external contact terminal on the at least one second semiconductor chip. In example embodiments the at least one second semiconductor chip may include a plurality of through silicon vias and the at least one external contact terminal may be in electrical contact with the first semiconductor chip and the at least one second semiconductor chip via the plurality of through silicon vias. In example embodiments, the at least one second semiconductor chip may be thinner than the first semiconductor chip.

Abstract: Provided are a memory card and a method of fabricating the memory card. The memory card includes: a printed circuit board including conductive wires exposed to at least a portion of an outer wall of the printed circuit board; at least one electronic device mounted on the printed circuit board; and a molding part sealing the at least one electronic device on the printed circuit board and the conductive wires exposed to the outer wall of the printed circuit board, and simultaneously exposing at least a portion of the outer wall of the printed circuit board.

Abstract: Provided are a memory card and a method of fabricating the memory card. The memory card includes: a printed circuit board including conductive wires exposed to at least a portion of an outer wall of the printed circuit board; at least one electronic device mounted on the printed circuit board; and a molding part sealing the at least one electronic device on the printed circuit board and the conductive wires exposed to the outer wall of the printed circuit board, and simultaneously exposing at least a portion of the outer wall of the printed circuit board.

Abstract: According to various embodiments of the present invention, a bonding pad structure of a semiconductor device reduces damage caused by thermo-mechanical stress in beam lead bonding. A method of fabricating an improved bonding pad structure is also provided. A polysilicon film plate is preferably formed between a bonding pad metal layer and a dielectric layer. The polysilicon film plate absorbs external thermo-mechanical stress and improves the durability of the bonding pad in a bond pull test (BPT). The bonding between the bonding pad metal layer and the dielectric layer is also improved. Other features and advantages are also provided.

Abstract: An apparatus for preventing regeneration of endometrial synechia, which comprises: an air injection tube, into which air is injected from the outside; a drainage lumen tube for draining intrauterine residue and blood, in which the air injection tube is received; an air hole formed at one side around an upper end of the drainage lumen tube to eject the air passed through the air injection tube; and a balloon fixed to the drainage lumen tube while covering the air hole formed at one side around the upper end of the drainage lumen tube, the balloon being configured to be inflated to conform to a shape of a woman's uterus within the uterus by the air injected through the air injection tube and air hole. The balloon of the apparatus is adapted to uniformly and safely spread to the whole interior of the uterus including the intrauterine isthmus and fundus uteri, thereby preventing regeneration of endometrial synechia as well as minimizing inconvenience to patients.

Abstract: A high-speed and high-pressure injection heat-generating device is provided, and enables liquid injected at a high speed and under a high pressure to become heated by the force of the friction and resistance generated from the collisions of liquid molecules as passing through a heating generating unit, and thus the heated liquid can be used for the purpose of heating water. By connecting a liquid circulating pump to a liquid feeding tube through which source liquid is supplied to the heating generating device on the outlet side of the liquid circulating pump and providing a tube with bends in the heating unit, where the tube includes a plurality projections closely formed on an inner surface thereof, more heating efficiency can be obtained. Therefore, the heat generating device can provide a heating source or hot water thereby obtaining a high temperature efficiency in variety of fields such as heating and hot water supply, without consuming energy sources like oil or gas.

Abstract: According to various embodiments of the present invention, a bonding pad structure of a semiconductor device reduces damage caused by thermo-mechanical stress in beam lead bonding. A method of fabricating an improved bonding pad structure is also provided. A polysilicon film plate is preferably formed between a bonding pad metal layer and a dielectric layer. The polysilicon film plate absorbs external thermo-mechanical stress and improves the durability of the bonding pad in a bond pull test (BPT). The bonding between the bonding pad metal layer and the dielectric layer is also improved. Other features and advantages are also provided.