Abstract: A plasma apparatus for vapor phase etching and cleaning, includes a reactor body configured to process a substrate; a direct plasma generation area in the reactor body, into which a process gas is introduced and in which plasma is directly induced to disassociate the process gas; a substrate processing area in the reactor body in which the substrate is processed by reactive species produced by reacting the disassociated process gas introduced from the direct plasma generation area with a vaporised gas introduced from the outside of the reactor body; a plasma induction assembly configured to induce plasma in the direct plasma generation area; and a gas distribution baffle, disposed between the direct plasma generation area and the substrate processing area, having a plurality of through holes through which the disassociated process gas is introduced from the direct plasma generation area to the substrate processing area.