Abstract: A method of manufacturing a composite electrode for an all-solid-state battery includes: preparing a precursor solution by mixing at least one solid electrolyte precursor and at least one polar solvent; stirring the precursor solution; preparing an electrode slurry by adding an active material to the stirred precursor solution; and heat-treating the electrode slurry and obtaining the composite electrode for the all-solid-state battery, wherein the composite electrode for the all-solid-state battery includes: the active material; and a coating layer disposed on the active material and including a solid electrolyte.

Abstract: An anisotropic conductive film, the anisotropic conductive film including an insulating layer and a conductive layer laminated on the insulating layer, the conductive layer containing conductive particles, wherein after glass substrates are positioned to face each other on the upper and lower surface of the anisotropic conductive film and are pressed against the anisotropic conductive film at 3 MPa (based on the sample area) and 160° C. (based on the detection temperature of the anisotropic conductive film) for 5 sec, a ratio of the area of the insulating layer to that of the conductive layer is from about 1.3:1 to about 3.0:1.

Abstract: A semiconductor device connected by an anisotropic conductive film, the anisotropic conductive film including a polyurethane resin; at least one other resin selected from the group of an ethylene-vinyl acetate copolymer resin, an acrylonitrile resin, and a styrene resin; isobornyl acrylate; and conductive particles.

Abstract: A semiconductor device connected using an anisotropic conductive adhesive composition, the anisotropic conductive adhesive composition including a thermosetting polymerization initiator; and tetrahydrofurfuryl (meth)acrylate or furfuryl (meth)acrylate, wherein the tetrahydrofurfuryl (meth)acrylate or furfuryl (meth)acrylate is present in the composition in an amount of 1 wt % to 25 wt %, based on the total weight of the composition in terms of solid content.

Abstract: A semiconductor device connected by an anisotropic conductive film, the film having a storage modulus of 100 MPa to 300 MPa at 40° C. after curing of the film, and a peak point of 80° C. to 90° C. in a DSC (Differential Scanning calorimeter) profile of the film.

Abstract: A semiconductor device including a first connecting member including a first electrode; a second connecting member including a second electrode; and an anisotropic conductive film between the first connecting member and the second connecting member, the anisotropic conductive film bonding the first electrode to the second electrode, wherein the anisotropic conductive film exhibits linear indentations in an inter-terminal space of the second connecting member after pre-compression and primary compression of the anisotropic conductive film onto the first and second connecting members.

Abstract: A semiconductor device connected by an anisotropic conductive film, the film having a storage modulus of 100 MPa to 300 MPa at 40° C. after curing of the film, and a peak point of 80° C. to 90° C. in a DSC (Differential Scanning calorimeter) profile of the film.

Abstract: A semiconductor device including a first connecting member including a first electrode; a second connecting member including a second electrode; and an anisotropic conductive film between the first connecting member and the second connecting member, the anisotropic conductive film bonding the first electrode to the second electrode, wherein the anisotropic conductive film exhibits linear indentations in an inter-terminal space of the second connecting member after pre-compression and primary compression of the anisotropic conductive film onto the first and second connecting members.

Abstract: A semiconductor device connected by an anisotropic conductive film, the anisotropic conductive film including a polyurethane resin; at least one other resin selected from the group of an ethylene-vinyl acetate copolymer resin, an acrylonitrile resin, and a styrene resin; isobornyl acrylate; and conductive particles.

Abstract: A semiconductor device connected using an anisotropic conductive adhesive composition, the anisotropic conductive adhesive composition including a thermosetting polymerization initiator; and tetrahydrofurfuryl (meth)acrylate or furfuryl (meth)acrylate, wherein the tetrahydrofurfuryl (meth)acrylate or furfuryl (meth)acrylate is present in the composition in an amount of 1 wt % to 25 wt %, based on the total weight of the composition in terms of solid content.

Abstract: An anisotropic conductive film, the anisotropic conductive film including an insulating layer and a conductive layer laminated on the insulating layer, the conductive layer containing conductive particles, wherein after glass substrates are positioned to face each other on the upper and lower surface of the anisotropic conductive film and are pressed against the anisotropic conductive film at 3 MPa (based on the sample area) and 160° C. (based on the detection temperature of the anisotropic conductive film) for 5 sec, a ratio of the area of the insulating layer to that of the conductive layer is from about 1.3:1 to about 3.0:1.

Abstract: An anisotropic conductive film includes a first insulating adhesive layer, a conductive adhesive layer, and a second insulating adhesive layer which are sequentially stacked on a base film, wherein an adhesive strength ratio of the second insulating adhesive layer to the first insulating adhesive layer is about 1.1 to about 20.