Abstract: A photosensitive resin composition includes: (A) a binder resin; (B) a photopolymerizable monomer; (C) a photopolymerization initiator; (D) a quantum dot surface-modified with a compound having a thiol group at one terminal end and an alkoxy group, a cycloalkyl group, a carboxyl group, or a hydroxy group at the other terminal end; and (E) a solvent. A curable composition includes: (A?) a resin; (B?) a quantum dot surface-modified with a compound represented by Chemical Formula 1 or Chemical Formula 2; and (C?) a solvent. A method of manufacturing the surface-modified quantum dot, and a color filter manufactured using the photosensitive resin composition or the curable composition are also disclosed.

Abstract: A photosensitive resin composition includes: (A) a binder resin; (B) a photopolymerizable monomer; (C) a photopolymerization initiator; (D) a quantum dot surface-modified with a compound having a thiol group at one terminal end and an alkoxy group, a cycloalkyl group, a carboxyl group, or a hydroxy group at the other terminal end; and (E) a solvent. A curable composition includes: (A?) a resin; (B?) a quantum dot surface-modified with a compound represented by Chemical Formula 1 or Chemical Formula 2; and (C?) a solvent. A method of manufacturing the surface-modified quantum dot, and a color filter manufactured using the photosensitive resin composition or the curable composition are also disclosed.

Abstract: A method of cleaning (e.g., selectively removing an oxide from) a surface of a substrate is disclosed. An exemplary method includes providing one or more of a haloalkylamine and a halogenated sulfur compound to a reaction chamber to selectively remove the silicon oxide from the surface.

Abstract: An apparatus and methods for selectively etching a particular layer are disclosed. The apparatus and methods are directed towards maintaining the etch rate of the particular layer, while keeping intact a non-etched layer. A gas mixture may be flowed onto the substrate in separate loops having an oxide layer and an oxynitride layer as an etch layer and a nitride layer as a non-etched layer, for example. A reaction between the resulting gas mixture and the particular layer takes place, resulting in etching of the oxide layer and the oxynitride layer while maintaining the nitride layer in the above example.

Abstract: A method of precleaning a substrate includes supporting a substrate with silicon oxide on its surface within a reaction chamber of a semiconductor processing system and flowing a halogen-containing reactant and a hydrogen-containing reactant into the reaction chamber. A first preclean material is formed from the halogen-containing reactant, the hydrogen-containing reactant, and a first portion of the silicon oxide on the surface of the substrate. Additional halogen-containing reactant is flowed into the reaction chamber without flowing additional hydrogen-containing reactant into the reaction chamber, and a second preclean material is formed from the additional halogen-containing reactant and a second portion of the silicon oxide on the surface of the substrate. Methods of forming structures on substrates and semiconductor processing systems are also described.

Abstract: In some embodiments, a method for semiconductor processing preclean includes removing an oxide layer from a substrate using anhydrous hydrogen fluoride in combination with water vapor. A system for the preclean may be configured to separate the anhydrous hydrogen fluoride and the water vapor until they are delivered to a common volume near the substrate. Corrosion within components of the system may be limited by purification of anhydrous hydrogen fluoride, passivation of components, changing component materials, and heating components. Passivation may be achieved by filling a gas delivery component with anhydrous hydrogen fluoride and allowing the anhydrous hydrogen fluoride to remain in the gas delivery component to form a passivation layer. Consistent water vapor delivery may be achieved in part by heating components using heaters.

Abstract: An apparatus and methods for selectively etching a particular layer are disclosed. The apparatus and methods are directed towards maintaining the etch rate of the particular layer, while keeping intact a non-etched layer. A gas mixture may be flowed onto the substrate in separate loops having an oxide layer and an oxynitride layer as an etch layer and a nitride layer as a non-etched layer, for example. A reaction between the resulting gas mixture and the particular layer takes place, resulting in etching of the oxide layer and the oxynitride layer while maintaining the nitride layer in the above example.

Abstract: An apparatus and methods for selectively etching a particular layer are disclosed. The apparatus and methods are directed towards maintaining the etch rate of the particular layer, while keeping intact a non-etched layer. A gas mixture may be flowed onto the substrate in separate loops having an oxide layer and an oxynitride layer as an etch layer and a nitride layer as a non-etched layer, for example. A reaction between the resulting gas mixture and the particular layer takes place, resulting in etching of the oxide layer and the oxynitride layer while maintaining the nitride layer in the above example.

Abstract: A photosensitive resin composition for producing a photosensitive resin film is provided, along with the manufactured photosensitive resin film and a color filter including the photosensitive resin layer. The photosensitive resin composition includes: (A) a quantum dot; (B) a binder resin having a weight average molecular weight of about 2,000 g/mol to about 12,000 g/mol; (C) a photopolymerizable monomer; (D) a photopolymerization initiator; and (E) a solvent.

Abstract: A photosensitive resin composition for producing a photosensitive resin film is provided, along with the manufactured photosensitive resin film and a color filter including the photosensitive resin layer. The photosensitive resin composition includes: (A) a quantum dot; (B) a binder resin having a weight average molecular weight of about 2,000 g/mol to about 12,000 g/mol; (C) a photopolymerizable monomer; (D) a photopolymerization initiator; and (E) a solvent.

Abstract: A photosensitive resin composition includes: (A) a binder resin; (B) a photopolymerizable monomer; (C) a photopolymerization initiator; (D) a quantum dot surface-modified with a compound having a thiol group at one terminal end and an alkoxy group, a cycloalkyl group, a carboxyl group, or a hydroxy group at the other terminal end; and (E) a solvent. A curable composition includes: (A?) a resin; (B?) a quantum dot surface-modified with a compound represented by Chemical Formula 1 or Chemical Formula 2; and (C?) a solvent. A method of manufacturing the surface-modified quantum dot, and a color filter manufactured using the photosensitive resin composition or the curable composition are also disclosed.

Abstract: A thin film transistor array panel includes a first substrate; a gate line and a data line on the first substrate; a storage electrode line on the first substrate where a constant voltage is applied thereto; a first thin film transistor and a second thin film transistor which are connected to the gate line and the data line; a third thin film transistor which is connected to the gate line, the second thin film transistor and the storage electrode line; a first subpixel electrode which is connected to the first thin film transistor; and a second subpixel electrode which is connected to the second thin film transistor.

Abstract: A test apparatus for a display includes an interface transmitting characteristic information including a resolution of the display unit and each equivalent model of a plurality of pixels, a reference voltage model including a plurality of reference voltages respectively corresponding to a plurality of pixels included in a unit region of the display unit, and pixel information including a position of a plurality of pixels to be tested among a plurality of pixels, a pixel model generator that schematizes a plurality of pixels into a plurality of test pixels and at least one equivalent load pixel according to the characteristic information and the pixel information to generate a pixel model, and a voltage mapper that maps the reference voltage model to the pixel model to calculate test voltages respectively corresponding to a plurality of test pixels and the equivalent load pixel.

Abstract: A semiconductor device connected by an anisotropic conductive film including a first insulation layer, a conductive layer, and a second insulation layer one above another, wherein the conductive layer has an expansion length of 20% or less in a width direction thereof, and the second insulation layer has an expansion length of 50% or more in a width direction thereof, the expansion length is calculated according to Equation 1, below, after glass substrates are placed on upper and lower sides of the anisotropic conductive film respectively, followed by compression at 110° C. to 200° C. for 3 to 7 seconds under a load of 1 MPa to 7 MPa per unit area of a sample, Increased ratio of expansion length (%)=[(length of corresponding layer in width direction after compression?length of corresponding layer in width direction before compression)/length of corresponding layer in width direction before compression]×100.

Abstract: A thin film transistor array panel includes a first substrate; a gate line and a data line on the first substrate; a storage electrode line on the first substrate where a constant voltage is applied thereto; a first thin film transistor and a second thin film transistor which are connected to the gate line and the data line; a third thin film transistor which is connected to the gate line, the second thin film transistor and the storage electrode line; a first subpixel electrode which is connected to the first thin film transistor; and a second subpixel electrode which is connected to the second thin film transistor.

Abstract: A liquid crystal display panel, including: a first substrate including a common electrode; a second substrate including a plurality of pixels which are arranged in a matrix form and face the common electrode, wherein at least one of the pixels includes first and second subpixels; the first subpixel including a first subpixel electrode, wherein the first subpixel electrode includes a plurality of first micro branches, which are arranged at a first angle with respect to a polarization axis of a polarizer disposed adjacent to the first or second substrate; the second subpixel including a second subpixel electrode, wherein the second subpixel electrode includes a plurality of second micro branches, which are arranged at a second angle with respect to the polarization axis of the polarizer, wherein the first angle is different from the second angle by about 20° or less; and a liquid crystal layer interposed between the first and second substrates.

Abstract: A method for designing a photomask includes preparing mask layout data including first pattern data and second pattern data, the first pattern data including shape information of a design pattern, and the second pattern data including the shape information of the design pattern and array information, assigning a first photoshoot region to the mask layout data, and when the first photoshoot region overlaps the second pattern data, determining whether or not the first photoshoot region overlaps the second pattern data and reconstructing the second pattern data according to a boundary of the first photoshoot region.

Abstract: A thin film transistor array panel includes a first substrate; a gate line and a data line on the first substrate; a storage electrode line on the first substrate where a constant voltage is applied thereto; a first thin film transistor and a second thin film transistor which are connected to the gate line and the data line; a third thin film transistor which is connected to the gate line, the second thin film transistor and the storage electrode line; a first subpixel electrode which is connected to the first thin film transistor; and a second subpixel electrode which is connected to the second thin film transistor.

Abstract: A liquid crystal display panel, including: a pixel electrode formed on a first substrate; an alignment layer formed on the pixel electrode, wherein the alignment layer includes an alignment layer material and aligns first liquid crystal molecules in a direction substantially perpendicular to the pixel electrode; and a photo hardening layer formed on the alignment layer, wherein the photo hardening layer includes a photo hardening layer material and aligns second liquid crystal molecules to be tilted with respect to the pixel electrode, wherein the alignment layer material and the photo hardening layer material have different polarities from each other.

Abstract: Provided are a gate driving apparatus and a display device including the same. The gate driving apparatus includes a plurality of stages arranged sequentially, each stage is adapted to output a gate signal and including first output lines and a second output line, wherein the first output lines are electrically connected to a gate line corresponding to each of the stages and are adapted to transmit the gate signal to a plurality of pixels coupled to the gate line, the second output line is adapted to transmit the gate signal to a preceding stage of each of the stages, and the first output lines and the second output line share one contact pad.