Abstract: The gas sensor according to an exemplary embodiment of the present invention comprises: an FET device including one or more gate electrodes; a sensor array part including a plurality of sensors, in which a first electrode of each sensor is connected to at least one gate electrode of the plurality of gate electrodes in the FET device; and a controller detecting a gas using a current between a drain-source in response to voltage changes in the gate electrode of the FET device, wherein each sensor includes: a first electrode connected to a gate electrode of the FET device; a second electrode receiving an operating voltage through a switch controlled by the controller; and a detection film interposed between the first electrode and the second electrode.

Abstract: A pressure sensor is proposed. The pressure sensor may include a base substrate, and at least one sensing electrode formed on the base substrate. The pressure sensor may also include an electrode wire electrically connected to one side of the sensing electrode, extending on the base substrate, and formed at one side of a power connection part. The pressure sensor may further include an insulative adhesive layer coated on a region of the base substrate other than a region on which the sensing electrode is formed. The pressure sensor may further include a resistant substrate which is stacked on and coupled to the base substrate by the adhesive layer and on one surface of which a resistor is formed to be spaced apart from and face the sensing electrode in a stacking direction. According to embodiments, it is possible to effectively achieve flexible response of a pressure sensor for external pressure.

Abstract: A conductive yarn pressure sensor is proposed. The pressure sensor may include a porous fiber layer having predetermined cavities formed therein. The pressure sensor may also include a first sensing electrode made of a first conductive yarn formed on one surface of the porous fiber layer, and a second sensing electrode made of a second conductive yarn formed on the other surface of the porous fiber layer. The first sensing electrode or the second sensing electrode may be provided so as to be in contact with each other in the cavities of the porous fiber layer due to external pressure. According to an embodiment, by having conductive yarn in flexible clothing or textile material, pressure can be sensed by effectively responding to deformation due to external pressure.

Abstract: This application relates to a pressure sensor. In one aspect, the sensor includes a base material and a through-hole formed to pass through the upper surface and the lower surface of the base material. The sensor may also include a conductive thread sensor including conductive thread that passes through the through-hole. According to some embodiments, the pressure sensor is implemented through a structural combination of the conductive thread and the base material so that the degree of design freedom can be effectively increased in the application of a variety of recent wearable flexible materials.

Abstract: Disclosed are a pressure sensor using conductive thread, the pressure sensor including a plurality of first conductive lines arranged parallel to each other in a first direction in a state of being spaced apart from each other, a plurality of second conductive lines arranged parallel to each other in a second direction intersecting the first direction in a state of being spaced apart from each other, and a spacer located between the plurality of first conductive lines and the plurality of second conductive lines, resistance of the spacer being changed when pressure is applied thereto, whereby it is possible to measure a wide range of pressure with elasticity and flexibility, and a method of manufacturing the same.

Abstract: A bio sensor using a FET element and an extended gate, and an operating method thereof are disclosed. A biosensor using a field effect transistor (FET) device and an extended gate electrode according to the present invention is characterized by comprising: an extended gate electrode connected to the FET element; a sensing electrode made of the same material as the extended gate electrode and on which a receptor antibody selectively recognizing a target molecule is fixed; and a reference electrode that maintains a constant potential and is selectively connected to the sensing electrode.

Abstract: The gas sensor according to an exemplary embodiment of the present invention comprises: an FET device including one or more gate electrodes; a sensor array part including a plurality of sensors, in which a first electrode of each sensor is connected to at least one gate electrode of the plurality of gate electrodes in the FET device; and a controller detecting a gas using a current between a drain-source in response to voltage changes in the gate electrode of the FET device, wherein each sensor includes: a first electrode connected to a gate electrode of the FET device; a second electrode receiving an operating voltage through a switch controlled by the controller; and a detection film interposed between the first electrode and the second electrode.

Abstract: Disclosed is a sensor for measuring skin conductivity and a method of manufacturing the same, wherein the sensor includes: a base board made of a flexible material; an electrode provided on a surface of the base board, and transmitting an electrical signal; and an uneven structure provided on the electrode, and configured to increase an electrical contact area with skin via sweat secreted onto a surface of skin.

Abstract: Disclosed is an image sensor using a nanowire, including a substrate, a photodetector for sensing incident light to produce photocurrent, the magnitude of which varies depending on the intensity of incident light, a signal processing module for outputting photodetection current including information about the presence or absence of incident light and the intensity of incident light based on the presence or absence of photocurrent and the magnitude thereof, and an electrode configured to electrically connect the photodetector and the signal processing module to each other and formed on the photodetector and the signal processing module, wherein the photodetector and the signal processing module are formed on the substrate, and the photodetector is formed of at least one silicon nanowire.

Abstract: Disclosed is a sensor for measuring skin conductivity and a method of manufacturing the same, wherein the sensor includes: a base board made of a flexible material; an electrode provided on a surface of the base board, and transmitting an electrical signal; and an uneven structure provided on the electrode, and configured to increase an electrical contact area with skin via sweat secreted onto a surface of skin.

Abstract: Disclosed is an avalanche photodiode using a silicon nanowire, including a first silicon nanowire formed of silicon (Si), a first conductive region formed by doping one surface of the first silicon nanowire with a first dopant, and a second conductive region formed by doping one surface of the first silicon nanowire with a second dopant having a conductive type different from that of the first dopant so as to be arranged continuously in a longitudinal direction from the first conductive region, wherein, when the magnitude of a reverse voltage applied to both ends of the first silicon nanowire is equal to or greater than a preset breakdown voltage, avalanche multiplication of inner current occurs due to the incidence of light from the outside.

Abstract: Disclosed is an avalanche photodiode using a silicon nanowire, including a first silicon nanowire formed of silicon (Si), a first conductive region formed by doping one surface of the first silicon nanowire with a first dopant, and a second conductive region formed by doping one surface of the first silicon nanowire with a second dopant having a conductive type different from that of the first dopant so as to be arranged continuously in a longitudinal direction from the first conductive region, wherein, when the magnitude of a reverse voltage applied to both ends of the first silicon nanowire is equal to or greater than a preset breakdown voltage, avalanche multiplication of inner current occurs due to the incidence of light from the outside.

Abstract: Disclosed is an image sensor using a nanowire, including a substrate, a photodetector for sensing incident light to produce photocurrent, the magnitude of which varies depending on the intensity of incident light, a signal processing module for outputting photodetection current including information about the presence or absence of incident light and the intensity of incident light based on the presence or absence of photocurrent and the magnitude thereof, and an electrode configured to electrically connect the photodetector and the signal processing module to each other and formed on the photodetector and the signal processing module, wherein the photodetector and the signal processing module are formed on the substrate, and the photodetector is formed of at least one silicon nanowire.

Abstract: Provided are an apparatus and method for eliminating noise. The method includes: detecting a speech section from a noise speech signal including a noise signal; separating the speech section into a consonant section and a vowel section on the basis of a VOP at the speech section; calculating a transfer function of a filter for eliminating the noise signal to allow the degree of noise elimination to be different in the consonant section and the vowel section; and eliminating the noise signal from the noise speech signal on the basis of the transfer function.

Abstract: An apparatus for correcting errors in speech recognition is provided. The apparatus includes a feature vector extracting unit extracting feature vectors from a received speech. A speech recognizing unit recognizes the received speech as a word sequence on the basis of the extracted feature vectors. A phoneme weighted finite state transducer (WFST)-based converting unit converts the recognized word sequence recognized by the speech recognizing unit into a phoneme WFST. A speech recognition error correcting unit corrects errors in the converted phoneme WFST. The speech recognition error correcting unit includes a WFST synthesizing unit modeling a phoneme WFST transferred from the phoneme WFST-based converting unit as pronunciation variation on the basis of a Kullback-Leibler (KL) distance matrix.

Abstract: An apparatus for correcting errors in speech recognition is provided. The apparatus includes a feature vector extracting unit extracting feature vectors from a received speech. A speech recognizing unit recognizes the received speech as a word sequence on the basis of the extracted feature vectors. A phoneme weighted finite state transducer (WFST)-based converting unit converts the recognized word sequence recognized by the speech recognizing unit into a phoneme WFST. A speech recognition error correcting unit corrects errors in the converted phoneme WFST. The speech recognition error correcting unit includes a WFST synthesizing unit modeling a phoneme WFST transferred from the phoneme WFST-based converting unit as pronunciation variation on the basis of a Kullback-Leibler (KL) distance matrix.

Abstract: Provided are an apparatus and method for eliminating noise. The method includes: detecting a speech section from a noise speech signal including a noise signal; separating the speech section into a consonant section and a vowel section on the basis of a VOP at the speech section; calculating a transfer function of a filter for eliminating the noise signal to allow the degree of noise elimination to be different in the consonant section and the vowel section; and eliminating the noise signal from the noise speech signal on the basis of the transfer function.

Abstract: The present invention provides a method for manufacturing a semiconductor nanowire device in mass production at a low cost without an additional complex nanowire alignment process or SOI substrate by forming a single crystal silicon nanowire with a simple process without forming an ultra fine pattern using an electron beam and transferring the nanowire separated from the substrate to another oxidation layer or insulation substrate. And also, the present invention suggests a method for simply manufacturing a nanowire device transferring the nanowire from a semiconductor substrate formed thereon the nanowire to another substrate formed thereon an insulation layer or the like.

Abstract: The present invention provides a method for manufacturing a semiconductor nanowire device in mass production at a low cost without an additional complex nanowire alignment process or SOI substrate by forming a single crystal silicon nanowire with a simple process without forming an ultra fine pattern using an electron beam and transferring the nanowire separated from the substrate to another oxidation layer or insulation substrate. And also, the present invention suggests a method for simply manufacturing a nanowire device transferring the nanowire from a semiconductor substrate formed thereon the nanowire to another substrate formed thereon an insulation layer or the like.

Abstract: A metal oxide electrode for a supercapacitor and a manufacturing method thereof are disclosed. Potassium permanganate is absorbed on a conductive material, such as carbon or activated carbon, and mixed with a solution including manganese acetate so as to form amorphous manganese oxide. Amorphous manganese oxide powder is grounded to a powder which is mixed with binder to form an electrode having a predetermined shape. The electrode reduces equivalent serial resistance and enhances high frequency characteristics since the contact area and the adhesion strength between the manganese oxide and the conductive carbon are improved. Also, the electrode has high capacitance suitable for a supercapacitor, which is manufactured therefrom at a greatly reduced cost.