Abstract: Disclosed is a CMOS image sensor, which can minimize a reflectance of light at an interface between a photodiode and an insulating film, thereby enhancing image sensitivity. Such a CMOS image sensor includes a substrate provided with a photodiode consisting of Si, an insulating film consisting of SiO2 and formed on the substrate, a semi-reflection film interposed between the substrate and the insulating film, and metal interconnections, color filters and micro lenses constituting individual unit pixels. The semi-reflection film has a refraction index value between those of the Si photodiode and the SiO2 insulating film.

Abstract: The present invention relates to a method of manufacturing a semiconductor device. A barrier metal layer for blocking a metal material from being diffused into an insulating film is formed by means of an ALD method. At this time, the barrier metal layer is formed to have an amorphous structure and the barrier metal layer at the bottom of a contact hole or a via hole is selectively removed so that the barrier metal layer having good anti-diffusion properties even in a thin thickness is obtained. Therefore, it is possible to prevent resistance from increasing due to the barrier metal layer.

Abstract: Disclosed is a motor brake structure including: a rotor; a rotor axis relatively fixed to the rotor; a soft material brake having a central portion thereof into which the rotor axis is inserted, the soft material brake rotating identically with the rotor axis; and a case formed at an outer side of the brake, wherein the soft material brake has a base part having a mortise into which the rotor axis is inserted; a flexible part circularly extended from an end of the base part; and a friction part extended from an end of the flexible part, having a friction surface formed at an outer circumference thereof, and large-sized relative to at least the flexible part.