Abstract: An apparatus for manufacturing a semiconductor device, including: a wet treatment chamber; a nozzle provided in the wet treatment chamber and configured to spray a treatment material onto a substrate; a supercritical fluid treatment chamber configured to supply a supercritical fluid onto the substrate to treat the substrate; a transfer device comprising an arm configured to transfer the substrate between the wet treatment chamber and the supercritical fluid treatment chamber; and a controller configured to control the wet treatment chamber to spray the treatment material onto the arm

Abstract: In a first aspect of the present disclosure, there is provided a nonvolatile memory device comprising: two electrodes; and a protein switching layer interposed between the two electrodes and including an amino acid, wherein then a voltage is applied to one of the electrodes, the amino acid chelates with an active electrode material to form a conductive filament, wherein the formation of the conductive filament allows a resistance state of the device to vary.

Abstract: In a first aspect of the present disclosure, there is provided a nonvolatile memory device comprising: two electrodes; and a protein switching layer interposed between the two electrodes and including an amino acid, wherein then a voltage is applied to one of the electrodes, the amino acid chelates with an active electrode material to form a conductive filament, wherein the formation of the conductive filament allows a resistance state of the device to vary.