Patents by Inventor Woo-Seok Jeon

Woo-Seok Jeon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10929009
    Abstract: An electronic device is provided. The electronic device includes a housing, a touch screen display that includes a first edge and a second edge, a microphone, at least one speaker, a wireless communication circuit, a memory, and a processor operably connected with the touch screen display, the microphone, the at least one speaker, the wireless communication circuit, and the memory. The processor is configured to output a home screen including a plurality of application icons in a matrix pattern. The processor is configured receive an input from the first edge to the second edge. The processor is configured output a user interface on the touch screen display that includes a button that allows user to call a first operation and a plurality of cards. To call the first operation the processor is configured to receive a user input, transmit data and receive a response, and perform a task.
    Type: Grant
    Filed: April 30, 2018
    Date of Patent: February 23, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young Seok Lim, Hong Seok Kwon, Ho Min Moon, Mi Jung Park, Woo Young Park, Ki Hyoung Son, Won Ick Ahn, Pil Seung Yang, Jae Seok Yoon, Gi Soo Lee, Sun Jung Lee, Jae Hyeok Lee, Hyun Yeul Lee, Hyeon Cheon Jo, Doo Soon Choi, Kyung Wha Hong, Da Som Lee, Yong Joon Jeon
  • Patent number: 10825880
    Abstract: A display device includes: a substrate; a semiconductor on the substrate and including a driving channel; a first insulating layer on the semiconductor; a driving gate electrode on the first insulating layer and overlapping the driving channel; a second insulating layer on the driving gate electrode and the first insulating layer and including first and second dielectric constant layers, the second dielectric constant layer having a dielectric constant that is greater than that of the first dielectric constant layer; a storage electrode on the second insulating layer; a passivation layer covering the storage electrode and the second insulating layer; a pixel electrode on the passivation layer; an emission member on the pixel electrode; and a common electrode on the emission member, wherein the storage electrode overlaps the driving gate electrode, and wherein the storage electrode, the driving gate electrode and the second insulating layer therebetween form a storage capacitor.
    Type: Grant
    Filed: September 27, 2018
    Date of Patent: November 3, 2020
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Jin Ho Hwang, Byeong-Beom Kim, Chul Min Bae, Woo-Seok Jeon
  • Publication number: 20200161394
    Abstract: A method for forming a light emitting element pattern according to an embodiment of the inventive concept includes forming a pattern layer having an opening on a target material, forming a light emitting element pattern on the target material in correspondence to the opening, and removing the pattern layer. Here, the pattern layer includes a first pattern layer disposed on the target material, a second pattern layer disposed on the first pattern layer, and a third pattern layer disposed on the second pattern layer. The second pattern layer has an undercut portion recessed from edges of the third pattern layer.
    Type: Application
    Filed: August 8, 2019
    Publication date: May 21, 2020
    Inventor: Woo-Seok JEON
  • Patent number: 10573701
    Abstract: An organic light emitting display device includes a substrate, an active layer, a gate electrode, a first high dielectric constant (hereinafter “high-k”) insulation structure, source and drain electrodes, and a light emitting structure. The active layer is disposed on the substrate. The gate electrode is disposed on the active layer. The first high-k insulation structure is disposed on the gate electrode and includes a carbon-doped first high-k insulation layer and a first ammonia layer on the carbon-doped first high-k insulation layer. The source and drain electrodes are disposed on the first high-k insulation structure and constitute a semiconductor element together with the active layer and the gate electrode. The light emitting structure is disposed on the source and drain electrodes.
    Type: Grant
    Filed: November 9, 2018
    Date of Patent: February 25, 2020
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Woo-Seok Jeon, Byeong-Beom Kim, Chulmin Bae, Jinho Hwang
  • Publication number: 20190355793
    Abstract: A display device includes a first electrode disposed on a substrate; a pixel defining layer including first through third exposure areas, each exposing at least part of the first electrode; first through third organic light emitting layers disposed in the first through third exposure areas, respectively; a second electrode disposed on the first through third organic light emitting layers; a first capping layer disposed on the second electrode and overlapping upper surfaces of the first through third organic light emitting layers; a second capping member disposed on the first capping layer, does not overlap the upper surface of the first organic light emitting layer, and overlaps only a portion of each of the upper surfaces of the second and third organic light emitting layers; and an encapsulation layer covering the second capping member.
    Type: Application
    Filed: April 16, 2019
    Publication date: November 21, 2019
    Inventors: Eon Seok Oh, Woo Sik Jeon, Sang Yeol Kim, Han Ggoch Nu Ri Jo
  • Publication number: 20190206969
    Abstract: A display device includes: a substrate; a semiconductor on the substrate and including a driving channel; a first insulating layer on the semiconductor; a driving gate electrode on the first insulating layer and overlapping the driving channel; a second insulating layer on the driving gate electrode and the first insulating layer and including first and second dielectric constant layers, the second dielectric constant layer having a dielectric constant that is greater than that of the first dielectric constant layer; a storage electrode on the second insulating layer; a passivation layer covering the storage electrode and the second insulating layer; a pixel electrode on the passivation layer; an emission member on the pixel electrode; and a common electrode on the emission member, wherein the storage electrode overlaps the driving gate electrode, and wherein the storage electrode, the driving gate electrode and the second insulating layer therebetween form a storage capacitor.
    Type: Application
    Filed: September 27, 2018
    Publication date: July 4, 2019
    Inventors: JIN HO HWANG, Byeong-Beom KIM, Chul Min BAE, Woo-Seok JEON
  • Publication number: 20190148472
    Abstract: An organic light emitting display device includes a substrate, an active layer, a gate electrode, a first high dielectric constant (hereinafter “high-k”) insulation structure, source and drain electrodes, and a light emitting structure. The active layer is disposed on the substrate. The gate electrode is disposed on the active layer. The first high-k insulation structure is disposed on the gate electrode and includes a carbon-doped first high-k insulation layer and a first ammonia layer on the carbon-doped first high-k insulation layer. The source and drain electrodes are disposed on the first high-k insulation structure and constitute a semiconductor element together with the active layer and the gate electrode. The light emitting structure is disposed on the source and drain electrodes.
    Type: Application
    Filed: November 9, 2018
    Publication date: May 16, 2019
    Inventors: Woo-Seok JEON, Byeong-Beom KIM, Chulmin BAE, Jinho HWANG
  • Patent number: 10020352
    Abstract: A substrate structure may be used in a display device. The substrate structure may include a base substrate, a transistor, and a silicon oxynitride layer. The transistor may include a semiconductor member and a gate electrode and may overlap the base substrate. The silicon oxynitride layer may directly contact at least one of the base substrate, the semiconductor member, and the gate electrode and may include (and/or contain) a hydrogen atom set. A hydrogen concentration in the silicon oxynitride layer may be greater than or equal to 1.52 atomic percent.
    Type: Grant
    Filed: July 14, 2016
    Date of Patent: July 10, 2018
    Assignee: Samsung Display Co., Ltd.
    Inventors: Yung-Bin Chung, Bo-Geon Jeon, Eun-Jeong Cho, Hye-Hyang Park, Sung-Hoon Yang, Woo-Seok Jeon, Joo-Hee Jeon, Chaun-Gi Choi
  • Patent number: 9859305
    Abstract: Provided are liquid crystal display and the method for manufacturing the same. According to an aspect of the present invention, there is provided a liquid crystal display device, including a first substrate; a gate electrode disposed on the first substrate; a semiconductor pattern layer disposed on the gate electrode; and a source electrode and a drain electrode disposed on the semiconductor pattern layer and facing each other, wherein a diffusion prevention pattern is disposed on the semiconductor pattern layer to prevent diffusion into the semiconductor pattern layer or to maintain uniform thickness of the semiconductor pattern layer.
    Type: Grant
    Filed: April 15, 2016
    Date of Patent: January 2, 2018
    Assignee: Samsung Display Co., Ltd.
    Inventors: Yung Bin Chung, Bo Geon Jeon, Eun Jeong Cho, Tae Young Ahn, Woo Seok Jeon, Sung Hoon Yang
  • Publication number: 20170110481
    Abstract: Provided are liquid crystal display and the method for manufacturing the same. According to an aspect of the present invention, there is provided a liquid crystal display device, including a first substrate; a gate electrode disposed on the first substrate; a semiconductor pattern layer disposed on the gate electrode; and a source electrode and a drain electrode disposed on the semiconductor pattern layer and facing each other, wherein a diffusion prevention pattern is disposed on the semiconductor pattern layer to prevent diffusion into the semiconductor pattern layer or to maintain uniform thickness of the semiconductor pattern layer.
    Type: Application
    Filed: April 15, 2016
    Publication date: April 20, 2017
    Inventors: Yung Bin CHUNG, Bo Geon JEON, Eun Jeong CHO, Tae Young AHN, Woo Seok JEON, Sung Hoon YANG
  • Publication number: 20170104048
    Abstract: A substrate structure may be used in a display device. The substrate structure may include a base substrate, a transistor, and a silicon oxynitride layer. The transistor may include a semiconductor member and a gate electrode and may overlap the base substrate. The silicon oxynitride layer may directly contact at least one of the base substrate, the semiconductor member, and the gate electrode and may include (and/or contain) a hydrogen atom set. A hydrogen concentration in the silicon oxynitride layer may be greater than or equal to 1.52 atomic percent.
    Type: Application
    Filed: July 14, 2016
    Publication date: April 13, 2017
    Inventors: Yung-Bin CHUNG, Bo-Geon JEON, Eun-Jeong CHO, Hye-Hyang PARK, Sung-Hoon YANG, Woo-Seok JEON, Joo-Hee JEON, Chaun-Gi CHOI
  • Publication number: 20170069843
    Abstract: A method of fabricating a deposition mask, the method including forming a photoresist pattern on a base member, the photoresist pattern having a plurality of inversely tapered photo patterns and a photo opening defined by the photo patterns; forming a mask material layer in the photo opening and on the photo patterns; removing the photo patterns and the mask material layer formed on the photo patterns, leaving the mask material layer formed in the photo opening; and removing the base member.
    Type: Application
    Filed: April 7, 2016
    Publication date: March 9, 2017
    Inventors: Hoon KANG, Bum Soo KAM, Chong Sup CHANG, Woo Seok JEON
  • Publication number: 20160223872
    Abstract: A liquid crystal display device includes a substrate; a gate line and a data line positioned on the substrate; a thin film transistor connected to the gate line and the data line; a passivation layer positioned on the gate line, the data line, and the thin film transistor; a first electrode positioned on the passivation layer; an interlayer insulating layer positioned on the first electrode; and a second electrode positioned on the interlayer insulating layer, wherein the first electrode includes a first layer made of an indium-zinc oxide in which a weight ratio of an indium oxide is 20 wt % or less or made of a transparent metal oxide that does not contain an indium oxide.
    Type: Application
    Filed: July 24, 2015
    Publication date: August 4, 2016
    Inventors: Woo-Seok JEON, Sung Hoon YANG, Chang Ok KIM, Jung Yun JO
  • Patent number: 9281322
    Abstract: A thin film transistor array panel is disclosed. The thin film transistor array panel may include a gate line disposed on a substrate and including a gate electrode, a semiconductor layer including an oxide semiconductor disposed on the substrate, a data wiring layer disposed on the substrate and including a data line crossing the gate line, a source electrode connected to the data line and a drain electrode facing the source electrode, a polymer layer covering the source electrode and the drain electrode, and a passivation layer disposed on the polymer layer. The data wiring layer may include copper or a copper alloy and the polymer layer may include fluorocarbon.
    Type: Grant
    Filed: March 16, 2015
    Date of Patent: March 8, 2016
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Seung-Ho Jung, Young Joo Choi, Joon Geol Kim, Kang Moon Jo, Sho Yeon Kim, Byung Hwan Chu, Woo Geun Lee, Woo-Seok Jeon
  • Patent number: 9166203
    Abstract: A method of fabricating a display substrate includes forming a gate electrode on a substrate, forming a gate insulating layer to cover the gate electrode, forming an active layer on the gate insulating layer, forming a metal layer on the active layer, forming a first mask pattern on the metal layer to face a first region of the active layer, forming a second mask pattern on the metal layer to face a second region and a third region of the active layer, etching the metal layer and the active layer using the first and second mask patterns as an etch mask to form a metal pattern and an active pattern, removing the first mask pattern, and etching the metal pattern using the second mask pattern as an etch mask to form a source electrode and a drain electrode.
    Type: Grant
    Filed: June 9, 2014
    Date of Patent: October 20, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventor: Woo-Seok Jeon
  • Publication number: 20150187813
    Abstract: A thin film transistor array panel is disclosed. The thin film transistor array panel may include a gate line disposed on a substrate and including a gate electrode, a semiconductor layer including an oxide semiconductor disposed on the substrate, a data wiring layer disposed on the substrate and including a data line crossing the gate line, a source electrode connected to the data line and a drain electrode facing the source electrode, a polymer layer covering the source electrode and the drain electrode, and a passivation layer disposed on the polymer layer. The data wiring layer may include copper or a copper alloy and the polymer layer may include fluorocarbon.
    Type: Application
    Filed: March 16, 2015
    Publication date: July 2, 2015
    Inventors: Seung-Ho JUNG, Young Joo CHOI, Joon Geol KIM, Kang Moon JO, Sho Yeon KIM, Byung Hwan CHU, Woo Geun LEE, Woo-Seok JEON
  • Publication number: 20150171377
    Abstract: A method of fabricating a display substrate includes forming a gate electrode on a substrate, forming a gate insulating layer to cover the gate electrode, forming an active layer on the gate insulating layer, forming a metal layer on the active layer, forming a first mask pattern on the metal layer to face a first region of the active layer, forming a second mask pattern on the metal layer to face a second region and a third region of the active layer, etching the metal layer and the active layer using the first and second mask patterns as an etch mask to form a metal pattern and an active pattern, removing the first mask pattern, and etching the metal pattern using the second mask pattern as an etch mask to form a source electrode and a drain electrode.
    Type: Application
    Filed: June 9, 2014
    Publication date: June 18, 2015
    Inventor: Woo-Seok Jeon
  • Patent number: 9052453
    Abstract: A display panel includes a base substrate having a plurality of pixel areas, in which each pixel area includes a plurality of sub-pixel areas, a light blocking layer pattern generally defining the sub-pixel areas, and a plurality of color filter patterns. Upper surfaces of the light blocking layer pattern and the plurality of color filter patterns collectively form a generally flat surface.
    Type: Grant
    Filed: July 18, 2011
    Date of Patent: June 9, 2015
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Hoon Kang, Jae-Sung Kim, Jin-Young Choi, YoungJe Cho, Woo-Seok Jeon
  • Patent number: 9035297
    Abstract: A thin-film transistor includes a metal electrode and a zinc oxide-based barrier film that blocks a material from diffusing out of the metal electrode. The zinc oxide-based barrier film is made of zinc oxide doped with indium oxide, the content of the indium oxide ranging, by weight, 1 to 50 percent of the zinc oxide-based barrier film. A zinc oxide-based sputtering target for deposition of a barrier film of a thin-film transistor is made of zinc oxide doped with indium oxide, the content of the indium oxide ranging, by weight, 1 to 50 percent of the zinc oxide-based sputtering target.
    Type: Grant
    Filed: June 28, 2013
    Date of Patent: May 19, 2015
    Assignees: SAMSUNG CORNING PRECISION MATERIALS CO., LTD., SAMSUNG DISPLAY CO., LTD., SAMSUNG CORNING ADVANCED GLASS, LLC
    Inventors: Jaewoo Park, Yoon Gyu Lee, Do-Hyun Kim, Dongjo Kim, Juok Park, Insung Sohn, Sangwon Yoon, Gunhyo Lee, Yongjin Lee, Woo-Seok Jeon
  • Patent number: D887430
    Type: Grant
    Filed: June 4, 2018
    Date of Patent: June 16, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jang-Won Seo, Yong-Hwan Kwon, Ji-Eun Kim, Ji-Hong Kim, Hye-Ryung Kim, Se-Ran Jeon, Woo-Seok Hwang