Abstract: A method for forming a light emitting element pattern according to an embodiment of the inventive concept includes forming a pattern layer having an opening on a target material, forming a light emitting element pattern on the target material in correspondence to the opening, and removing the pattern layer. Here, the pattern layer includes a first pattern layer disposed on the target material, a second pattern layer disposed on the first pattern layer, and a third pattern layer disposed on the second pattern layer. The second pattern layer has an undercut portion recessed from edges of the third pattern layer.

Abstract: A display device includes a substrate, an active pattern disposed on the substrate, and including a first area, a second area, a (1-1)th channel area, a (1-2)th channel area, and a third area disposed between the (1-1)th channel area and the (1-2)th channel area, a first insulating layer disposed on the substrate and covering the active pattern, a second insulating layer which is disposed on the first insulating layer and in which an opening overlapping the (1-2)th channel area, the second area, and the third area is defined, a first gate electrode disposed on the first insulating layer and overlapping the (1-1)th channel area the (1-2)th channel area, respectively, and a high dielectric layer disposed on the first insulating layer and the second insulating layer, covering the first gate electrode, and filling the opening.

Abstract: A display panel includes a light-emitting element, and a pixel circuit electrically connected to the light-emitting element, where the pixel circuit includes a transistor. The transistor includes: a gate; a first insulating pattern overlapping the gate, and disposed under the gate; a second insulating pattern including a part disposed outside the first insulating pattern in a plan view; and a semiconductor pattern disposed under the first insulating pattern and the second insulating pattern, and overlapping the first insulating pattern and the second insulating pattern in the plan view.

Abstract: A method of manufacturing a photo sensor includes forming a first conductive layer on a substrate, the first conductive layer including a metal layer and a transparent conductive oxide layer formed on the metal layer, forming a photoconductive layer on the first conductive layer, forming a second conductive layer on the photoconductive layer, forming a first photoresist pattern on the second conductive layer, etching the second conductive layer using the first photoresist pattern as an etch mask to form a second electrode, deforming the first photoresist pattern to form a second photoresist pattern, and etching the photoconductive layer and the first conductive layer using the second photoresist pattern to form a photoconductive pattern and a first electrode, respectively.

Abstract: A manufacturing method of a mask assembly includes forming a cell mask including masking patterns and a mesh frame including conductive patterns disposed to correspond to the masking patters and disposing the cell mask and the mesh frame on a mask frame. The forming the cell mask and the mesh frame includes forming a polymer layer, a conductive layer, and a hard masking layer, forming a mask pattern layer including etch patterns, and forming the cell mask and the mesh frame using the mask pattern layer.

Abstract: A fingerprint sensor, includes: a light sensing layer including a photo-sensing element to flow a sensing current according to incident light; and a collimator layer on the light sensing layer, the collimator layer including: a first light blocking layer having a plurality of first holes; a first light transmitting layer on the first light blocking layer; and a second light blocking layer on the first light transmitting layer, and having a plurality of second holes overlapping with the plurality of first holes.

Abstract: A printed circuit board includes: an insulating layer having one surface and the other surface; metal layers respectively disposed on the one surface and the other surface of the insulating layer; a through-hole penetrating through the insulating layer and the metal layers; a first plating layer disposed in a center portion of the through-hole in a thickness direction thereof; and a plug disposed in the through-hole.

Abstract: A method for forming a light emitting element pattern according to an embodiment of the inventive concept includes forming a pattern layer having an opening on a target material, forming a light emitting element pattern on the target material in correspondence to the opening, and removing the pattern layer. Here, the pattern layer includes a first pattern layer disposed on the target material, a second pattern layer disposed on the first pattern layer, and a third pattern layer disposed on the second pattern layer. The second pattern layer has an undercut portion recessed from edges of the third pattern layer.

Abstract: A method for forming a light emitting element pattern according to an embodiment of the inventive concept includes forming a pattern layer having an opening on a target material, forming a light emitting element pattern on the target material in correspondence to the opening, and removing the pattern layer. Here, the pattern layer includes a first pattern layer disposed on the target material, a second pattern layer disposed on the first pattern layer, and a third pattern layer disposed on the second pattern layer. The second pattern layer has an undercut portion recessed from edges of the third pattern layer.

Abstract: A method of manufacturing a photo sensor includes forming a first conductive layer on a substrate, the first conductive layer including a metal layer and a transparent conductive oxide layer formed on the metal layer, forming a photoconductive layer on the first conductive layer, forming a second conductive layer on the photoconductive layer, forming a first photoresist pattern on the second conductive layer, etching the second conductive layer using the first photoresist pattern as an etch mask to form a second electrode, deforming the first photoresist pattern to form a second photoresist pattern, and etching the photoconductive layer and the first conductive layer using the second photoresist pattern to form a photoconductive pattern and a first electrode, respectively.

Abstract: A display device includes: a substrate; a semiconductor on the substrate and including a driving channel; a first insulating layer on the semiconductor; a driving gate electrode on the first insulating layer and overlapping the driving channel; a second insulating layer on the driving gate electrode and the first insulating layer and including first and second dielectric constant layers, the second dielectric constant layer having a dielectric constant that is greater than that of the first dielectric constant layer; a storage electrode on the second insulating layer; a passivation layer covering the storage electrode and the second insulating layer; a pixel electrode on the passivation layer; an emission member on the pixel electrode; and a common electrode on the emission member, wherein the storage electrode overlaps the driving gate electrode, and wherein the storage electrode, the driving gate electrode and the second insulating layer therebetween form a storage capacitor.

Abstract: A method for forming a light emitting element pattern according to an embodiment of the inventive concept includes forming a pattern layer having an opening on a target material, forming a light emitting element pattern on the target material in correspondence to the opening, and removing the pattern layer. Here, the pattern layer includes a first pattern layer disposed on the target material, a second pattern layer disposed on the first pattern layer, and a third pattern layer disposed on the second pattern layer. The second pattern layer has an undercut portion recessed from edges of the third pattern layer.

Abstract: An organic light emitting display device includes a substrate, an active layer, a gate electrode, a first high dielectric constant (hereinafter “high-k”) insulation structure, source and drain electrodes, and a light emitting structure. The active layer is disposed on the substrate. The gate electrode is disposed on the active layer. The first high-k insulation structure is disposed on the gate electrode and includes a carbon-doped first high-k insulation layer and a first ammonia layer on the carbon-doped first high-k insulation layer. The source and drain electrodes are disposed on the first high-k insulation structure and constitute a semiconductor element together with the active layer and the gate electrode. The light emitting structure is disposed on the source and drain electrodes.

Abstract: A display device includes: a substrate; a semiconductor on the substrate and including a driving channel; a first insulating layer on the semiconductor; a driving gate electrode on the first insulating layer and overlapping the driving channel; a second insulating layer on the driving gate electrode and the first insulating layer and including first and second dielectric constant layers, the second dielectric constant layer having a dielectric constant that is greater than that of the first dielectric constant layer; a storage electrode on the second insulating layer; a passivation layer covering the storage electrode and the second insulating layer; a pixel electrode on the passivation layer; an emission member on the pixel electrode; and a common electrode on the emission member, wherein the storage electrode overlaps the driving gate electrode, and wherein the storage electrode, the driving gate electrode and the second insulating layer therebetween form a storage capacitor.

Abstract: An organic light emitting display device includes a substrate, an active layer, a gate electrode, a first high dielectric constant (hereinafter “high-k”) insulation structure, source and drain electrodes, and a light emitting structure. The active layer is disposed on the substrate. The gate electrode is disposed on the active layer. The first high-k insulation structure is disposed on the gate electrode and includes a carbon-doped first high-k insulation layer and a first ammonia layer on the carbon-doped first high-k insulation layer. The source and drain electrodes are disposed on the first high-k insulation structure and constitute a semiconductor element together with the active layer and the gate electrode. The light emitting structure is disposed on the source and drain electrodes.

Abstract: A substrate structure may be used in a display device. The substrate structure may include a base substrate, a transistor, and a silicon oxynitride layer. The transistor may include a semiconductor member and a gate electrode and may overlap the base substrate. The silicon oxynitride layer may directly contact at least one of the base substrate, the semiconductor member, and the gate electrode and may include (and/or contain) a hydrogen atom set. A hydrogen concentration in the silicon oxynitride layer may be greater than or equal to 1.52 atomic percent.

Abstract: Provided are liquid crystal display and the method for manufacturing the same. According to an aspect of the present invention, there is provided a liquid crystal display device, including a first substrate; a gate electrode disposed on the first substrate; a semiconductor pattern layer disposed on the gate electrode; and a source electrode and a drain electrode disposed on the semiconductor pattern layer and facing each other, wherein a diffusion prevention pattern is disposed on the semiconductor pattern layer to prevent diffusion into the semiconductor pattern layer or to maintain uniform thickness of the semiconductor pattern layer.

Abstract: Provided are liquid crystal display and the method for manufacturing the same. According to an aspect of the present invention, there is provided a liquid crystal display device, including a first substrate; a gate electrode disposed on the first substrate; a semiconductor pattern layer disposed on the gate electrode; and a source electrode and a drain electrode disposed on the semiconductor pattern layer and facing each other, wherein a diffusion prevention pattern is disposed on the semiconductor pattern layer to prevent diffusion into the semiconductor pattern layer or to maintain uniform thickness of the semiconductor pattern layer.

Abstract: A substrate structure may be used in a display device. The substrate structure may include a base substrate, a transistor, and a silicon oxynitride layer. The transistor may include a semiconductor member and a gate electrode and may overlap the base substrate. The silicon oxynitride layer may directly contact at least one of the base substrate, the semiconductor member, and the gate electrode and may include (and/or contain) a hydrogen atom set. A hydrogen concentration in the silicon oxynitride layer may be greater than or equal to 1.52 atomic percent.

Abstract: A method of fabricating a deposition mask, the method including forming a photoresist pattern on a base member, the photoresist pattern having a plurality of inversely tapered photo patterns and a photo opening defined by the photo patterns; forming a mask material layer in the photo opening and on the photo patterns; removing the photo patterns and the mask material layer formed on the photo patterns, leaving the mask material layer formed in the photo opening; and removing the base member.