Patents by Inventor Woo-Seok Ko
Woo-Seok Ko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10373796Abstract: A method of inspecting a wafer may include: loading of a wafer onto a stage, the wafer having a plurality of dies thereon; positioning of the wafer such that a plurality of electron beam columns on the wafer respectively face a partial region of each of the plurality of dies on the wafer; scanning the respective partial regions of each of the plurality of dies by using the electron beam columns; and combining a plurality of partial images that are obtained by scanning the partial regions to provide a die image.Type: GrantFiled: March 29, 2016Date of Patent: August 6, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Souk Kim, Chung-sam Jun, Woo-seok Ko, Sang-kil Lee, Kwang-il Shin, Yu-sin Yang, Min-chul Yoon
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Patent number: 10001444Abstract: A surface inspecting method includes: irradiating an incident light beam of a first polarized state on a target object, the incident light beam comprising parallel light and having a cross-sectional area: measuring a second polarized state of a reflected light beam reflected from the target object; and performing inspection on an entire area of the target object on which the incident light beam is irradiated, based on a variation between the first polarized state and the second polarized state.Type: GrantFiled: December 1, 2015Date of Patent: June 19, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Kang-woong Ko, Sung-yoon Ryu, Young-hoon Sohn, Gil-woo Song, Tae-heung Ahn, Hyoung-jo Jeon, Sang-kyeong Han, Masahiro Horie, Woo-seok Ko, Yu-sin Yang, Sang-kil Lee, Byeong-hwan Jeon
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Patent number: 9934939Abstract: A method of measuring an overlay offset using a scanning electron microscope system includes: scanning an in-cell region, which includes a lower structure and an upper structure stacked in a sample, using a primary electron beam with a landing energy of at least 10 kV; detecting electrons emitted from the scanned in-cell region; and measuring an overlay offset with respect to overlapping patterns included in the in-cell region using an image of the in-cell region that is generated based on the detected electrons emitted from the scanned in-cell region.Type: GrantFiled: August 20, 2014Date of Patent: April 3, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Min Kook Kim, Woo Seok Ko, Yu Sin Yang, Sang Kil Lee, Chung Sam Jun
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Patent number: 9831626Abstract: A broadband light source includes a first electrodeless lamp to generate first broadband light from plasma, a first elliptical reflector having first and second focuses, the first elliptical reflector enclosing a rear portion of the first electrodeless lamp positioned at the first focus of the first elliptical reflector such that the first broadband light is reflected from the first elliptical reflector toward a light collector as a collective light, a symmetrically curved reflector having a third focus, the symmetrically curved reflector positioned such that the third focus is coincident with one of the first and second focuses, and a laser irradiator to provide a laser beam to the first electrodeless lamp.Type: GrantFiled: October 1, 2015Date of Patent: November 28, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sung-Yoon Ryu, Woo-Seok Ko, Yu-Sin Yang, Sang-Kil Lee, Chung-Sam Jun, Seong-Jin Yun
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Patent number: 9733178Abstract: Spectral ellipsometry measurement systems are provided including a polarizer that rotates at a first angle and adjusts a polarizing direction of incident light of a measurement sample; a compensator that rotates at a second angle, different from the first angle, and adjusts a phase difference of the incident light; an analyzer that rotates at a third angle and adjusts a polarizing direction of light reflected on the measurement sample; a detector that detects a spectral image from the reflected light; a controller that controls one of the polarizer, the compensator, and the analyzer according to polarizer-compensator-analyzer (PCA) angle sets including the first to third angles; and a processor that receives, from the detector, a first spectral image corresponding to a first PCA angle set and a first wavelength and a second spectral image corresponding to a second PCA angle set and a second wavelength, different from the first wavelength, and generates a polarizer-compensator-analyzer rotating (PCAR) spectralType: GrantFiled: July 23, 2015Date of Patent: August 15, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Sung-Yoon Ryu, Woo-Seok Ko, Yu-Sin Yang, Sang-Kil Lee, Chung-Sam Jun
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Patent number: 9678020Abstract: Example embodiments relate to an apparatus and method for inspecting a substrate defect. The substrate defect inspecting apparatus includes a substrate, a light source emitting an infrared beam to the substrate, a detector detecting the infrared beam reflected from the substrate, and a defect analyzer receiving first information and second information from the detector and analyzing defects existing in the substrate. According to at least one example embodiment, the second information is acquired during a later process than the first information.Type: GrantFiled: July 9, 2015Date of Patent: June 13, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Joon-Seo Song, Woo-seok Ko, Ji-Young Shin, Seong-Jin Yun, Yu-Sin Yang, Sang-Kil Lee, Chung-Sam Jun
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Publication number: 20160293379Abstract: A method of inspecting a wafer may include: loading of a wafer onto a stage, the wafer having a plurality of dies thereon; positioning of the wafer such that a plurality of electron beam columns on the wafer respectively face a partial region of each of the plurality of dies on the wafer; scanning the respective partial regions of each of the plurality of dies by using the electron beam columns; and combining a plurality of partial images that are obtained by scanning the partial regions to provide a die image.Type: ApplicationFiled: March 29, 2016Publication date: October 6, 2016Inventors: Souk Kim, Chung-sam Jun, Woo-seok Ko, Sang-Kil Lee, Kwang-il Shin, Yu-sin Yang, Min-chul Yoon
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Overlay measuring method and system, and method of manufacturing semiconductor device using the same
Patent number: 9455206Abstract: An overlay measuring method includes irradiating an electron beam onto a sample, including a multi-layered structure of overlapped upper and lower patterns formed thereon, to obtain an actual image of the upper and lower patterns. A first image representing the upper pattern and a second image representing the lower pattern are obtained from the actual image. A reference position for the upper and lower patterns is determined from a design image of the upper and lower patterns. A position deviation of the upper pattern with respect to the reference position in the first image and a position deviation of the lower pattern with respect to the reference position in the second image are calculated to determine an overlay between the upper pattern and the lower pattern.Type: GrantFiled: July 10, 2015Date of Patent: September 27, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Seong-Jin Yun, Woo-Seok Ko, Yu-Sin Yang, Sang-Kil Lee, Chung-Sam Jun -
Publication number: 20160261786Abstract: Provided is a wafer inspection apparatus using three-dimensional (3D) images, which apparatus may acquire a 3D image by adjusting a focal position at a high speed, and inspect a wafer by using the 3D image so that a 3D inspection operation may be precisely performed on patterns formed on the wafer at a high speed. The wafer inspection apparatus may include a stage on which a wafer is disposed, an optical apparatus configured to acquire an image of a pattern formed on the wafer by using a scan method, a focus adjusting unit configured to change a focal position of light irradiated to the wafer according to a scan speed of the optical apparatus, and an image processor configured to integrate images corresponding to focal positions and generate and analyze 3D images.Type: ApplicationFiled: December 4, 2015Publication date: September 8, 2016Inventors: Jeong-ho Ahn, Yu-sin Yang, Yun-jung Jee, Woo-seok Ko
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Patent number: 9417055Abstract: An apparatus and a system for measuring the thickness of a thin film are provided. The apparatus includes a signal detector, a Fast Fourier Transform (FFT) generator, an Inverse Fast Fourier Transform (IFFT) generator, and a thickness analyzer. The signal detector detects an electric field signal with respect to a reflected light that is reflected from a thin film. The FFT generator performs FFT with respect to the electric field signal to separate a DC component from an AC component of the electric field signal. The IFFT generator receives the separated AC component of the electric field signal, performs IFFT with respect to the AC component, and extracts a phase value of the AC component. The thickness analyzer measures the thickness of the thin film using the extracted phase value.Type: GrantFiled: July 14, 2015Date of Patent: August 16, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sung-Yoon Ryu, Sang-Kil Lee, Chung-Sam Jun, Woo-Seok Ko, Ho-Jeong Kwak, Souk Kim, Kwan-Woo Ryu, Yu-Sin Yang
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Publication number: 20160189369Abstract: A defect detecting method includes generating an actual image of a pattern on a sample based on irradiation of an electron beam onto the sample, performing a contrast conversion of the actual image to generate a conversion image representing a normal pattern, matching the conversion image and a design image for the pattern, and detecting a defective pattern in the actual image based on matching of the conversion image and the design image. The contrast conversion may be performed for gray levels of pixels in the actual image.Type: ApplicationFiled: December 14, 2015Publication date: June 30, 2016Inventors: Jae-Ouk JUNG, Woo-Seok KO, Yu-Sin YANG, Sang-Kil LEE, Chung-Sam JUN
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Publication number: 20160153915Abstract: A surface inspecting method includes: irradiating an incident light beam of a first polarized state on a target object, the incident light beam comprising parallel light and having a cross-sectional area: measuring a second polarized state of a reflected light beam reflected from the target object; and performing inspection on an entire area of the target object on which the incident light beam is irradiated, based on a variation between the first polarized state and the second polarized state.Type: ApplicationFiled: December 1, 2015Publication date: June 2, 2016Inventors: Kang-woong Ko, Sung-yoon Ryu, Young-hoon Sohn, Gil-woo Song, Tae-heung Ahn, Hyoung-jo Jeon, Sang-kyeong Han, Masahiro Horie, Woo-seok Ko, Yu-sin Yang, Sang-kil Lee, Byeong-hwan Jeon
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Publication number: 20160097513Abstract: A broadband light source includes a first electrodeless lamp to generate first broadband light from plasma, a first elliptical reflector having first and second focuses, the first elliptical reflector enclosing a rear portion of the first electrodeless lamp positioned at the first focus of the first elliptical reflector such that the first broadband light is reflected from the first elliptical reflector toward a light collector as a collective light, a symmetrically curved reflector having a third focus, the symmetrically curved reflector positioned such that the third focus is coincident with one of the first and second focuses, and a laser irradiator to provide a laser beam to the first electrodeless lamp.Type: ApplicationFiled: October 1, 2015Publication date: April 7, 2016Inventors: Sung-Yoon RYU, Woo-Seok KO, Yu-Sin YANG, Sang-Kil LEE, Chung-Sam JUN, Seong-Jin YUN
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Publication number: 20160061583Abstract: An apparatus and a system for measuring the thickness of a thin film are provided. The apparatus includes a signal detector, a Fast Fourier Transform (FFT) generator, an Inverse Fast Fourier Transform (IFFT) generator, and a thickness analyzer. The signal detector detects an electric field signal with respect to a reflected light that is reflected from a thin film. The FFT generator performs FFT with respect to the electric field signal to separate a DC component from an AC component of the electric field signal. The IFFT generator receives the separated AC component of the electric field signal, performs IFFT with respect to the AC component, and extracts a phase value of the AC component. The thickness analyzer measures the thickness of the thin film using the extracted phase value.Type: ApplicationFiled: July 14, 2015Publication date: March 3, 2016Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sung-Yoon RYU, Sang-Kil LEE, Chung-Sam JUN, Woo-Seok KO, Ho-Jeong KWAK, Souk KIM, Kwan-Woo RYU, Yu-Sin YANG
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Patent number: 9261532Abstract: A conductive atomic force microscope including a plurality of probe structures each including a probe and a cantilever connected thereto, a power supplier applying a bias voltage, a current detector detecting a first current flowing between a sample object and each of the probes and a second current flowing between a measurement object and each of the probes, and calculating representative currents for the sample and measurement objects based on the first and second currents, respectively, and a controller calculating a ratio between representative currents of the sample object measured by each of the probe structures, calculating a scaling factor for scaling the representative current with respect to the measurement object measured by each of the probes, and determine a reproducible current measurement value based on the second measurement current and the scaling factor may be provided.Type: GrantFiled: April 23, 2015Date of Patent: February 16, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyun-woo Kim, Woo-seok Ko, Young-hwan Kim, Jeong-hoi Kim, Baek-man Sung, Hyung-su Son, Chae-ho Shin, Yu-sin Yang, Jae-youn Wi, Sang-kil Lee, Chung-sam Jun
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Patent number: 9255694Abstract: An illumination optic system includes a convex mirror to reflect light from a light source to towards a lens. The light source is at a first focus position and the lens is at a second focus position of the mirror. The system also includes a reflector to reflect light not incident on the lens toward the convex mirror. The reflector has a light guide hole to guide light to the incidence surface of the lens.Type: GrantFiled: February 8, 2013Date of Patent: February 9, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Won-Don Joo, Woo-Seok Ko, Yu-Sin Yang, Sue-Jin Cho, Sang Don Jang, Byeong Hwan Jeon
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Publication number: 20160033550Abstract: A conductive atomic force microscope including a plurality of probe structures each including a probe and a cantilever connected thereto, a power supplier applying a bias voltage, a current detector detecting a first current flowing between a sample object and each of the probes and a second current flowing between a measurement object and each of the probes, and calculating representative currents for the sample and measurement objects based on the first and second currents, respectively, and a controller calculating a ratio between representative currents of the sample object measured by each of the probe structures, calculating a scaling factor for scaling the representative current with respect to the measurement object measured by each of the probes, and determine a reproducible current measurement value based on the second measurement current and the scaling factor may be provided.Type: ApplicationFiled: April 23, 2015Publication date: February 4, 2016Inventors: Hyun-woo KIM, Woo-seok KO, Young-hwan KIM, Jeong-hoi KIM, Baek-man SUNG, Hyung-su SON, Chae-ho SHIN, Yu-sin YANG, Jae-youn WI, Sang-kil LEE, Chung-sam JUN
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Publication number: 20160025654Abstract: Example embodiments relate to an apparatus and method for inspecting a substrate defect. The substrate defect inspecting apparatus includes a substrate, a light source emitting an infrared beam to the substrate, a detector detecting the infrared beam reflected from the substrate, and a defect analyzer receiving first information and second information from the detector and analyzing defects existing in the substrate. According to at least one example embodiment, the second information is acquired during a later process than the first information.Type: ApplicationFiled: July 9, 2015Publication date: January 28, 2016Inventors: Joon-Seo SONG, Woo-seok KO, Ji-Young SHIN, Seong-Jin YUN, Yu-Sin YANG, Sang-Kil LEE, Chung-Sam JUN
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Publication number: 20160025618Abstract: Spectral ellipsometry measurement systems are provided including a polarizer that rotates at a first angle and adjusts a polarizing direction of incident light of a measurement sample; a compensator that rotates at a second angle, different from the first angle, and adjusts a phase difference of the incident light; an analyzer that rotates at a third angle and adjusts a polarizing direction of light reflected on the measurement sample; a detector that detects a spectral image from the reflected light; a controller that controls one of the polarizer, the compensator, and the analyzer according to polarizer-compensator-analyzer (PCA) angle sets including the first to third angles; and a processor that receives, from the detector, a first spectral image corresponding to a first PCA angle set and a first wavelength and a second spectral image corresponding to a second PCA angle set and a second wavelength, different from the first wavelength, and generates a polarizer-compensator-analyzer rotating (PCAR) spectralType: ApplicationFiled: July 23, 2015Publication date: January 28, 2016Inventors: Sung-Yoon Ryu, Woo-Seok KO, Yu-Sin YANG, Sang-Kil LEE, Chung-Sam JUN
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OVERLAY MEASURING METHOD AND SYSTEM, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
Publication number: 20160013109Abstract: An overlay measuring method includes irradiating an electron beam onto a sample, including a multi-layered structure of overlapped upper and lower patterns formed thereon, to obtain an actual image of the upper and lower patterns. A first image representing the upper pattern and a second image representing the lower pattern are obtained from the actual image. A reference position for the upper and lower patterns is determined from a design image of the upper and lower patterns. A position deviation of the upper pattern with respect to the reference position in the first image and a position deviation of the lower pattern with respect to the reference position in the second image are calculated to determine an overlay between the upper pattern and the lower pattern.Type: ApplicationFiled: July 10, 2015Publication date: January 14, 2016Inventors: Seong-Jin YUN, Woo-Seok KO, Yu-Sin YANG, Sang-Kil LEE, Chung-Sam JUN