Abstract: In an aspect, an organic light-emitting display apparatus and a method of manufacturing the same are provided. The organic light-emitting display apparatus may include a substrate; a display unit formed on the substrate; and a thin film encapsulating layer encapsulating the display unit. The thin film encapsulating layer may include a plurality of organic layers and inorganic layers that are laminated alternately. At least one of the plurality of the inorganic films may include a first layer formed of a first material, a second layer formed of a second material other than the first material, and an intermediate layer provided between the first and second layers.

Abstract: The present invention relates to an apparatus for heat-treating a substrate, and more particularly to an apparatus for substrate treatment to perform a heat treatment of a substrate for a flat panel display panel. An apparatus for substrate treatment according to an embodiment of the present invention comprises a processing chamber having a substrate treatment space; a heating housing having a heating lamp that emits radiant energy and a reflecting block that reflects radiant energy emitted from the heating lamp; and a window that maintains a sealing between the processing chamber and the heating housing and transmits the radiant energy to a substrate.

Abstract: Provided are graphene transistors having a tunable barrier. The graphene transistor includes a semiconductor substrate, an insulating thin film disposed on the semiconductor substrate, a graphene layer on the insulating thin film, a first electrode connected to an end of the graphene layer, a second electrode that is separate from an other end of the graphene layer and contacts the semiconductor substrate, a gate insulating layer covering the graphene layer, and a gate electrode on the gate insulating layer, wherein an energy barrier is formed between the semiconductor substrate and the graphene layer.

Abstract: The present invention relates to a pharmaceutical composition for the treatment of eye pain, containing a PGE2 synthesis inhibitor. The use of the pharmaceutical composition for the prevention or treatment of eye pain according to the present invention, which contains the PGE2 synthesis inhibitor as an active ingredient, makes it possible to alleviate the symptoms of eye pain by selectively inhibiting the PGE2 expression level, and also has the advantages of treating and preventing xerophthalmia and of overcoming and preventing eye discomfort caused by various inflammation-inducing circumstances including following surgery. Also, by using a kit for detecting the amount of PGE2, PGD2 and COX2, the present invention makes it possible to easily diagnose eye-pain symptoms in clinical practice, and can be widely used in checking the state not only of patients having xerophthalmia but also patients following eye surgery.

Abstract: A vapor deposition apparatus for depositing a thin film on a substrate includes a cover having an accommodation portion and a communicated portion, which communicated portion is connected to the accommodation portion and faces a direction of the substrate, and includes a body in the accommodation portion, which body includes a first portion and a second portion. The first portion is disposed at a first location of the body and connected to a first injection portion for injecting a first material onto the substrate, the second portion is disposed at a second location of the body and connected to a second injection portion for injecting a second material onto the substrate, and the body rotates in at least one direction so that the first portion and the second portion are alternately connected to each other with respect to the communicated portion.

Abstract: A heater block according to the present invention comprises a light-emitting lamp; a concave reflecting member that is placed opposite the lamp and has a concave reflecting surface at one surface faced with the lamp; a lens module that is inserted into the concave reflecting member and has at least one lens; and a flat reflecting member that is placed opposite the lens module. According to embodiments of the present invention, light emitted from the lamp is reflected by the concave reflecting member. Then, light and heat are collected from the reflected light by the flat reflecting member and the lens module and are irradiated on a substrate. That is, light having energy greater than a conventional manner is irradiated on the substrate to enhance the instant heating temperature and temperature increasing rate of substrate and to increase a heat-focusing area. Therefore, it has an advantage that the productivity of semiconductor or display device manufacture that requires a rapid thermal process is improved.

Abstract: Provided are graphene transistors having a tunable barrier. The graphene transistor includes a semiconductor substrate, an insulating thin film disposed on the semiconductor substrate, a graphene layer on the insulating thin film, a first electrode connected to an end of the graphene layer, a second electrode that is separate from an other end of the graphene layer and contacts the semiconductor substrate, a gate insulating layer covering the graphene layer, and a gate electrode on the gate insulating layer, wherein an energy barrier is formed between the semiconductor substrate and the graphene layer.

Abstract: Example embodiments relate to methods of doping a 2-dimensional semiconductor. The method includes forming a semiconductor layer on a substrate, implanting ions into the semiconductor layer, forming a doped layer formed of a 2-dimensional semiconductor layer or an organic semiconductor layer on the semiconductor layer, and doping the doped layer by diffusing the ions of the semiconductor layer into the doped layer through annealing the substrate.

Abstract: This invention relates to a method of healing defects at junctions of a semiconductor device, which includes growing a p-Ge layer on a substrate, performing ion implantation on the p-Ge layer to form an n+ Ge region or performing in-situ doping on the p-Ge layer and then etching to form an n+ Ge region or depositing an oxide film on the p-Ge layer and performing patterning, etching and in-situ doping to form an n+ Ge layer, forming a capping oxide film, performing annealing at 600˜700° C. for 1˜3 hr, and depositing an electrode, and in which annealing enables Ge defects at n+/p junctions to be healed and the depth of junctions to be comparatively reduced, thus minimizing leakage current, thereby improving properties of the semiconductor device and achieving high integration and fineness of the semiconductor device.

Abstract: An organic light emitting display apparatus includes a substrate, a display unit on the substrate, a dispersion layer on the display unit, and a thin film encapsulation layer sealing the display unit and the dispersion layer. The dispersion layer has a diffusion coefficient in a horizontal direction that is greater than a diffusion coefficient in a vertical direction.

Abstract: A deposition apparatus includes a stage and a deposition module. The stage holds a substrate. The deposition module faces the substrate. The stage relatively moves in a direction relative to the deposition module. The deposition module includes a first feeding unit and a first light exposure unit. The first feeding unit sprays a first raw material toward the substrate. The first light exposure unit is disposed on at least one side of the first feeding unit and provides light to the at least one raw material sprayed on the substrate.

Abstract: A battery management system (BMS) and a method of driving the same are disclosed. In one aspect, the BMS includes a first state of charge (SOC) estimator configured to estimate an SOC of a battery using at least one of i) a charge and discharge current of the battery, ii) a voltage of the battery and iii) a temperature of the battery. The BMS also includes a residual capacity estimator, when the estimated SOC is substantially equal to or less than the reference SOC, configured to estimate a current residual capacity using at least one of i) a reference residual capacity calculated from a reference SOC, ii) the measured battery voltage, iii) a first reference voltage, and iv) a second reference voltage. The BMS further includes a second SOC estimator configured to estimate a current SOC based at least in part on the current residual capacity.

Abstract: A battery management system includes a sensing unit and a main controller unit (MCU) is disclosed. In one aspect, the sensing unit is configured to measure a current value and a voltage value of a battery under a discharge condition of the battery. In addition, the MCU is configured to receive the current and voltage values and further configured to manage capacities of the battery based at least in part on the current and voltage values. In addition, the MCU includes a an unusable capacity calculating unit configured to calculate an unusable capacity corresponding to a portion of a theoretical maximum capacity of the battery that is unusable under the discharge condition, where the unusable capacity is calculated based at least in part on the current value and an internal resistance value of the battery under the discharge condition.

Abstract: In an aspect, an organic light-emitting display apparatus and a method of manufacturing the same are provided. The organic light-emitting display apparatus may include a substrate; a display unit formed on the substrate; and a thin film encapsulating layer encapsulating the display unit. The thin film encapsulating layer may include a plurality of organic layers and inorganic layers that are laminated alternately. At least one of the plurality of the inorganic films may include a first layer formed of a first material, a second layer formed of a second material other than the first material, and an intermediate layer provided between the first and second layers.

Abstract: A battery management system for effectively and accurately estimating a state of charge (SOC) of a battery is disclosed. In one aspect, the battery management system includes a main controller unit configured to receive current and voltage data from a sensing unit and calculate an open circuit voltage (OCV) upon determining that a sum of integrated current values exceeds a predetermined value. The battery management system is further configured to estimate the SOC based on the calculated OCV.

Abstract: This invention relates to a method of healing defects at junctions of a semiconductor device, which includes growing a p-Ge layer on a substrate, performing ion implantation on the p-Ge layer to form an n+ Ge region or performing in-situ doping on the p-Ge layer and then etching to form an n+ Ge region or depositing an oxide film on the p-Ge layer and performing patterning, etching and in-situ doping to form an n+ Ge layer, forming a capping oxide film, performing annealing at 600˜700° C. for 1˜3 hr, and depositing an electrode, and in which annealing enables Ge defects at n+/p junctions to be healed and the depth of junctions to be comparatively reduced, thus minimizing leakage current, thereby improving properties of the semiconductor device and achieving high integration and fineness of the semiconductor device.

Abstract: A vapor deposition apparatus for depositing a thin film on a substrate, by which a deposition process is efficiently performed and deposition film characteristics are easily improved, and a vapor deposition apparatus including: a stage onto which a substrate is disposed; and a supply unit disposed to face the substrate and having a main body member and a nozzle member disposed on one surface of the main body member facing the substrate, to sequentially supply a plurality of gases towards the substrate, and a method of manufacturing an organic light-emitting display apparatus using the same.

Abstract: A vapor deposition apparatus for depositing a thin film on a substrate includes a cover having an accommodation portion and a communicated portion, which communicated portion is connected to the accommodation portion and faces a direction of the substrate, and includes a body in the accommodation portion, which body includes a first portion and a second portion. The first portion is disposed at a first location of the body and connected to a first injection portion for injecting a first material onto the substrate, the second portion is disposed at a second location of the body and connected to a second injection portion for injecting a second material onto the substrate, and the body rotates in at least one direction so that the first portion and the second portion are alternately connected to each other with respect to the communicated portion.

Abstract: The present invention relates to an apparatus for heat-treating a substrate, and more particularly to an apparatus for substrate treatment to perform a heat treatment of a substrate for a flat panel display panel. An apparatus for substrate treatment according to an embodiment of the present invention comprises a processing chamber having a substrate treatment space; a heating housing having a heating lamp that emits radiant energy and a reflecting block that reflects radiant energy emitted from the heating lamp; and a window that maintains a sealing between the processing chamber and the heating housing and transmits the radiant energy to a substrate.

Abstract: Provided is an apparatus and method for transmitting and receiving a streaming service. An inter-arrival jitter may correspond to a delay variation in arrival time between TCP packets arriving at an apparatus for receiving the streaming service. The apparatus for receiving the streaming service may determine a de-jitter buffering time to absorb a network jitter before TS packets in a TCP packet is input to a T-STD buffer model. Based on the de-jitter buffering time, an initial playout delay lime at the apparatus for receiving the streaming service may be determined.