Abstract: A copper film is treated by applying light at short wavelengths, e.g., at less than 0.6 ?m, to heat the copper film and generate a large temperature gradient from the surface of the copper to the interface between the copper and underlying silicon. As a result, grain growth in the copper is enhanced.

Abstract: A system and method for conditioning a beam of light comprised of several wavelengths by means of selecting from among the plurality of available wavelengths, a desired set of wavelengths simultaneously. A small number of multi-wavelength lasers or continuous spectra light sources, or both, may be the source for the plurality of light wavelengths, and a configuration of beam splitters/combiners, mirrors and wavelength selectable pass- and stop-filters provide a combined beam of light wavelengths selected from among the available wavelengths.

Abstract: A ring is provided that, together with a wafer, separates a processing chamber into an upper portion and a lower portion so that one side of the wafer, such as the backside, can be cleaned or otherwise processed with little or no interaction to the frontside of the wafer. The wafer sits on pins extending from a plate so that processor cleaning gases can contact the surface of the wafer backside. In one embodiment, the ring is conductive, with an inner insulating ring, and the place is also conductive. The conductive plate and ring act as electrodes for plasma generation underneath the wafer.

Abstract: A process chamber includes an opening, two or more stacked cold plates adjacent the opening, two or more stacked hot plates adjacent the cold plates, and a rotatable wafer transport capable of moving a wafer between the cold plates and between the hot plates for processing of the wafer. The wafer can be rapidly heated while between the hot plates. The wafer transport has perpendicular walls about a pivot such that when the wafer is between the cold plates or between the hot plates, one of the walls separates the cold and hot portions, thereby increasing the efficiency of cooling and heating.

Abstract: After ion implantation, thermal ashing is performed using ozone at a pressure of between about 0.01 to about 1000 Torr at below 1000° C. to remove the resist. Since the process includes a substantial amount of ozone, the resist can be completely oxidized, thus leaving no residue or other contaminates to remain on the substrate. Using ozone allows fast resist removal with minimal residue at low temperatures.

Abstract: A multi-spectral uniform light source provides a single light source for a variety of applications. The gas or gases inside the light source may be exchanged for another gas or gases depending on the desired application and need for a particular wavelength of emitted light.

Abstract: An apparatus and corresponding method for heating a wafer during processing. The apparatus includes a process chamber enclosing a processing tube defining a processing area. The processing tube includes a first wall and a second wall which define a hollow cavity or passageway therebetween. The second wall includes a plurality of holes or outlets formed thereon which allow environmental communication between the hollow cavity and the processing area. The apparatus also includes a plurality of resistive heating elements positioned adjacent to the processing tube. A thermal energy output from the resistive heating elements is configured to heat a gas flowing through the hollow cavity. The gas flowing through the hollow cavity exits the hollow cavity through the plurality of holes and convectively change the temperature of the wafer disposed in the processing tube.

Abstract: A wind power system is provided including at least one generator fan having a front face and a rear face. The system also includes a first wind capturing device positioned proximate to the front face. The wind capturing device can be configured to capture wind to create a first pressure proximate to the front face that is greater than a second pressure proximate to the rear face. The pressure difference causes the captured wind to flow across the at least one generator fan from the front face to the rear face.

Abstract: A process, which includes implanting hydrogen ions into a silicon substrate, overlaying the silicon substrate on to a support substrate, and applying a flash anneal heat treatment to the silicon and support substrates to cause the silicon substrates to separate at a region defined by the implanted hydrogen ions.

Abstract: After ion implantation, thermal ashing is conducted in a high oxygen concentration at a pressure of between about 100 to about 760 Torr at below 700° C. to remove the resist. Since photoresist consists of Carbon (C), Hydrogen (H) and Oxygen (O), the products of reaction of the thermal oxidation of the photoresist include CO2 and H2O. Since the process includes a substantial amount of oxygen, the resist can be completely oxidized, thus leaving no residue or other contaminates to remain on the substrate.

Abstract: A system, method and apparatus for processing a semiconductor device including a processing chamber and a heating assembly positioned within the processing chamber. The heating assembly including at least a plate defining an internal cavity configured to receive gas. The gas enters the internal cavity through a first passage at a first temperature, and exits the internal cavity at a second temperature through a second passage.

Abstract: A system and method for isothermally distributing a temperature across a semiconductor device. A furnace assembly is provided, which includes a processing tube configured to removably receive a wafer carrier having a full compliment of semiconductor wafers. A heating assembly is provided which can include a heating element positioned to heat air or other gases allowed to enter the process tube. The furnace assembly and process tube are capable of being vertically raised and lowered into a position enclosing the heating assembly within the process tube. Once the heating assembly forms a seal with the process tube, the process tube is exhausted and purged of air. Gas is then allowed to flow into the process tube and exchange heat with the heating element. The heated gas circulates through the process tube to convectively change the temperature of the wafers.

Abstract: An apparatus and method for heating substrates, such as semiconductor wafers. A radiation energy source is arranged proximate to a reflector to direct radiation towards a window providing optical access to a processing chamber. A lens positioned outside of the window focuses the radiation emitted from the radiation energy source and reflector and directs it through the window. The focused radiation energy can be used to directly or indirectly heat a semiconductor wafer disposed the processing chamber.

Abstract: A rapid thermal processor, having a process chamber, including a stable heat source in the form of a heatable mass. Heat is provided to the heatable mass using a series of heating devices. The temperature of the heatable mass establishes the temperature of a semiconductor wafer placed in contact or in close proximity to the heatable mass. To reduce thermal gradients, the heatable mass can be included in an insulative compartment made of an insulating material, such as opaque quartz and the like. The top of the insulative compartment can include an access portion to allow the semiconductor wafer to be placed on the heatable mass disposed therein. During processing, the wafer may be further exposed to a high intensity radiation energy source for a short duration of time.

Abstract: A method and system are provided for delivering a source gas to a processing chamber. A source gas delivery method includes providing a precursor chamber configured to hold precursor vapor, providing a saturated precursor vapor at a selected pressure within the precursor chamber, and flowing or diffusing saturated precursor vapor from the precursor chamber to the processing chamber until a selected pressure is provided in the processing chamber. A source gas delivery system includes a precursor chamber configured to hold precursor vapor, a heat source for heating a precursor liquid to provide saturated precursor vapor at a selected pressure within the precursor chamber, and a vapor pathway allowing saturated precursor vapor to enter a processing chamber until a selected pressure is provided in the processing chamber. Advantageously, the present invention allows for improved precursor vapor delivery and enhanced control over thin film deposition with less waste of precursor material.

Abstract: A system and method for conserving and/or recycling hydrogen used in processing operations. The present invention can be used with any conventional reactor, which supports semiconductor processes using hydrogen. Hydrogen is pumped into the reactor from a hydrogen gas supply chamber. The hydrogen is used in the reactor as needed to perform the process function. The hydrogen accompanied with other process gases is exhausted from the reactor. The exhausted gases are routed through a scrubber, which is used to separate the hydrogen from the other gases. The other gases are allowed to vent from the system in a typical manner. The hydrogen is then pumped through an H2 purifier, which cleans the hydrogen gas making the gas once again useable in the semiconductor process.

Abstract: An apparatus and corresponding method for heating a wafer during processing. The apparatus includes a process chamber enclosing a processing tube defining a processing area. The processing tube includes a first wall and a second wall which define a hollow cavity or passageway therebetween. The second wall includes a plurality of holes or outlets formed thereon which allow environmental communication between the hollow cavity and the processing area. The apparatus also includes a plurality of resistive heating elements positioned adjacent to the processing tube. A thermal energy output from the resistive heating elements is configured to heat a gas flowing through the hollow cavity. The gas flowing through the hollow cavity exits the hollow cavity through the plurality of holes and convectively change the temperature of the wafer disposed in the processing tube.

Abstract: A system and method for isothermally distributing a temperature across a semiconductor device. A furnace assembly is provided, which includes a processing tube configured to removably receive a wafer carrier having a full compliment of semiconductor wafers. A heating assembly is provided which can include a resistive heating element positioned to heat air or other gases allowed to enter the process tube. The wafer carrier and heating assembly are vertically raised into a position within the process tube. Once the heating assembly forms a seal with the process tube, the process tube is exhausted and purged of air. Gas is then allowed to flow into the process tube and exchange heat with the heating element. The heated gas circulates through the process tube to convectively raise the temperature of the wafers.

Abstract: A benchtop processing system utilizing a wafer receptacle for wafer processing is provided. The wafer receptacle has a plurality of sloped projections capable of receiving a plurality of wafers having different diameter sizes. The wafer receptacle is transported to a processing chamber from a wafer reception module which can also be used as a cooling module. Advantageously, the benchtop processing system and method of the present invention allows for efficient and compact wafer processing.

Abstract: A valve assembly including a main body defining a central axis and a gate. The gate includes a curved surface relative to the central axis and the gate is disposed within the main body. The gate is rotatable about an axis of rotation running along the length of the gate. The valve assembly also includes an actuation assembly for rotating the gate about the axis of rotation between a first position where said valve is open and a second position where said valve is closed.