Abstract: A system includes an application processor configured to generate a read request and including a data memory; a host processor configured to generate a read command corresponding to the read request; and a data storage device including a data storage memory, wherein the data storage device transmits read data output from the data storage device according to the read command to the data memory of the application processor without passing the host processor.

Abstract: A memory system includes a memory device including a first memory block and a second memory block, wherein the first memory block stores a first data chunk having a first size and the second memory block stores a second data chunk having a second size, and the first size is less than the second size; and a controller operatively coupled to the memory device, wherein the controller is configured to read the second data chunk from the second memory block, correct at least one error of the second data chunk when the at least one error is detected, and copy a portion of the second data chunk to the first memory block, wherein the portion of the second data chunk is error-corrected and has the first size.

Abstract: A data storage apparatus may include a storage including a first region and second region, each region includes a plurality of memory blocks, and a controller configured to exchange data with the storage at a request of a host. The controller may include a data classification component configured to classify attributes of data stored in the storage as hot data or cold data based on continuity of the data, and configured to move the hot data to the first region and the cold data to the second region respectively by a background operation.

Abstract: A system includes an application processor configured to generate a read request and including a data memory; a host processor configured to generate a read command corresponding to the read request; and a data storage device including a data storage memory, wherein the data storage device transmits read data output from the data storage device according to the read command to the data memory of the application processor without passing the host processor.

Abstract: A data storage device includes a nonvolatile memory device including a key storage area and a value storage area; and a first control circuit configured to control storing a value in the value storage area, and storing a key corresponding to the value with address information of a value in the key storage area according to a key-value (KV) command.

Abstract: Provided is a cryogenic refrigeration system. The cryogenic refrigeration system includes a cryogenic refrigerator, and a heat dissipation module configured to cool the cryogenic refrigerator. Here, the heat dissipation module includes a condenser configured to condense a refrigerant that cools the cryogenic refrigerator, and a heat exchanger connected to the cryogenic refrigerator to circulate the refrigerant between the cryogenic refrigerator and the condenser, thereby cooling the cryogenic refrigerator.

Abstract: Provided is a method of manufacturing a superconducting wire. A superconducting tape having an outer surface is provided, a copper layer is formed on the outer surface of the superconducting tape, and first metal tape and second metal tape are respectively attached on a first surface and a second surface of the superconducting tape on which the copper layer is formed.

Abstract: Provided is a method of manufacturing a superconducting wire. A superconducting tape having an outer surface is provided, a copper layer is formed on the outer surface of the superconducting tape, and first metal tape and second metal tape are respectively attached on a first surface and a second surface of the superconducting tape on which the copper layer is formed.

Abstract: A thin film transistor and a liquid crystal display, in which a gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed.

Abstract: The present invention provides a system with a plurality of Bluetooth dongles connected to a single host. Each dongle is connected to a different port on the host and each dongle can accommodate a piconet of up to seven Bluetooth devices. The host communicates with the Bluetooth devices via Bluetooth channels. The host includes an application layer, a Host Control Interface (HCI) layer and an interface device driver layer. An Interface Map Table (IMT) is stored in the host. The IMT associates each port on the host with the BD address of a particular Bluetooth dongle and with the channels associated with the particular dongle. The HCI layer and the Interface handler layer consult the IMT to direct commands and data to the correct port on the host.

Abstract: A thin film transistor and a liquid crystal display, in which a gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed.

Abstract: The present invention relates to a thin film transistor and a liquid crystal display. A gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed.

Abstract: In a liquid crystal display, a plurality of gate lines and data lines are provided on a first substrate including a display area as a screen, and a peripheral area external to the display area wherein a plurality of pixel electrodes are electrically connected to the gate lines and to the data lines, and some of the pixel electrodes extend to be located in the peripheral area; and optionally, a black matrix is formed on a second substrate disposed opposite to the first substrate for screening the extended portions of the pixel electrodes located in the peripheral area, a rubbing direction of aligning films is formed on the first and the second substrates towards the extended portions of the pixel electrodes located in the peripheral area so that impurity ions on the surface of the aligning film travel along the rubbing direction to stop at the extended portions of the pixel electrode, and an image defect area caused by the impurity ions is screened with the black matrix.

Abstract: A thin film transistor (TFT) array panel includes: an insulating substrate (110); first and second semiconductor members (151 a,b) formed on the substrate and having opposite conductivity; a first gate member (121a) formed on a first layer (140), insulated from the first and the second semiconductor members and overlapping one of the first and the second semiconductor members; a second gate member (122a) formed on the first layer (140), separated from the first gate member, and insulated from the first and the second semiconductor members (151 a,b), the second gate member (122a) not overlapping the first and the second semiconductor members; a first data member (162) formed on a second layer (160), connected to one of the first and the second semiconductor members (151 a,b) and insulated from the first (121a) and the second (122a) gate members; and a first connection (123) formed on the second layer (160) and connecting the first gate member (121a) and the second gate member (122a).

Abstract: In a liquid crystal display, a plurality of gate lines and data lines are provided on a first substrate including a display area as a screen, and a peripheral area external to the display area wherein a plurality of pixel electrodes are electrically connected to the gate lines and to the data lines, and some of the pixel electrodes extend to be located in the peripheral area; and optionally, a black matrix is formed on a second substrate disposed opposite to the first substrate for screening the extended portions of the pixel electrodes located in the peripheral area, a rubbing direction of aligning films is formed on the first and the second substrates towards the extended portions of the pixel electrodes located in the peripheral area so that impurity ions on the surface of the aligning film travel along the rubbing direction to stop at the extended portions of the pixel electrode, and an image defect area caused by the impurity ions is screened with the black matrix.

Abstract: The present invention relates to a thin film transistor and a liquid crystal display. A gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed.

Abstract: In a liquid crystal display, a plurality of gate lines and data lines are provided on a first substrate including a display area as a screen, and a peripheral area external to the display area wherein a plurality of pixel electrodes are electrically connected to the gate lines and to the data lines, and some of the pixel electrodes extend to be located in the peripheral area; and optionally, a black matrix is formed on a second substrate disposed opposite to the first substrate for screening the extended portions of the pixel electrodes located in the peripheral area, a rubbing direction of aligning films is formed on the first and the second substrates towards the extended portions of the pixel electrodes located in the peripheral area so that impurity ions on the surface of the aligning film travel along the rubbing direction to stop at the extended portions of the pixel electrodes, and an image defect area caused by the impurity ions is screened with the black matrix.

Abstract: The present invention relates to a thin film transistor and a liquid crystal display. A gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed.

Abstract: A thin film transistor array panel includes: an insulating substrate (110); first and second semiconductor members (151 a,b) formed on the substrate and having opposite conductivity; a first gate member (121a) insulated from the first and the second semiconductor members and overlapping one of the first and the second semiconductor members; a second gate member (122a) formed on the same layer as the first gate member (121a), separated from the first gate member, and insulated from the first and the second semiconductor members (151 a,b), the second gate member (122a) not overlapping the first and the second semiconductor members; a first data member (162) connected to one of the first and the second semiconductor members (151 a,b) and insulated from the first (121a) and the second (122a) gate members; and a first connection (123) formed on the same layer as the first data member and connecting the first gate member (121a) and the second gate member (122a).

Abstract: In a TFT LCD device comprising a substrate, at least one thin film transistor formed on the substrate, having a source electrode and a drain electrode, an insulating layer formed over the whole surface of the substrate on which the thin film transistor is formed, having at least one contact hole exposing a portion of the drain electrode, and reflective layer pixel electrode corresponding to the thin film transistor, formed on the insulating layer to be connected with the drain electrode through the contact hole, the pixel electrode is formed of a multi-layered conductive layer. The drain electrode is composed of multiple layers, and the most upper layer of the multiple layers is one selected from a Cr layer and a MoW layer. Preferably, the multi-layered conductive layer is composed of two-layered conductive layer having a lower layer of the same material as that of the most upper layer and an upper layer of Al-containing metal.