Abstract: A selection device, non-volatile memory cell, and method of fabricating the same. The selection device employs an oxide laminate structure including a tunneling oxide layer and a metal-cluster oxide layer between first and second electrodes, enabling a high selection ratio and sufficient on-current density to allow program data recordation in a memory cell at relatively low voltage. The non-volatile memory cell includes the selection device electrically connected to a resistive random access memory device, including a resistance change layer, enabling suppression of current leakage from a non-selected adjacent memory cell in an array structure. In the method of fabrication, a tunneling oxide layer is formed by depositing and oxidizing a metal layer to control oxygen vacancy density in the metal-cluster oxide layer, and an interface oxide layer is formed in the tunneling oxide layer by doping of metal-clusters in the metal-cluster oxide layer, improving on-current density of the selection device.

Abstract: A selection device, non-volatile memory cell, and method of fabricating the same. The selection device employs an oxide laminate structure including a tunneling oxide layer and a metal-cluster oxide layer between first and second electrodes, enabling a high selection ratio and sufficient on-current density to allow program data recordation in a memory cell at relatively low voltage. The non-volatile memory cell includes the selection device electrically connected to a resistive random access memory device, including a resistance change layer, enabling suppression of current leakage from a non-selected adjacent memory cell in an array structure. In the method of fabrication, a tunneling oxide layer is formed by depositing and oxidizing a metal layer to control oxygen vacancy density in the metal-cluster oxide layer, and an interface oxide layer is formed in the tunneling oxide layer by doping of metal-clusters in the metal-cluster oxide layer, improving on-current density of the selection device.