Abstract: The present invention relates to a method for producing a culture medium-derived component or a crystallized culture medium using a PCA (Precipitation with Compressed Fluid Anti-solvent) drying process, a method for restoring chondrocytes using the culture medium-derived component or the crystallized culture medium prepared by way of the above method, a method for treating a subject having osteoarthritis by way of the method for restoring chondrocytes using the culture medium-derived component or the crystallized culture medium, a method for treating a subject having osteoarthritis using the culture medium-derived component or the crystallized culture medium, and the use of the culture medium-derived component or the crystallized culture medium for the treatment of osteoarthritis.

Abstract: A method of depositing a thin film may include providing a wafer into a thin film apparatus, rotating the wafer, flowing a plasma across the wafer from edge to edge, depositing a first thin film on the wafer, creating a temperature gradient within the thin apparatus, and depositing a second thin film on the wafer. The temperature gradient may include having the temperature at the center of the wafer being higher than the temperature at the edges of the wafer.

Abstract: Provided are an apparatus for depositing a thin film, and a method of depositing the thin film. The apparatus may include a vertical tube providing a space in which a thin film deposition process is performed, a plasma generator generating plasma in the vertical tube, a heater adjacent to the vertical tube for heating the vertical tube, and a boat receiving a plurality of wafers and rotatably disposed in the vertical tube. The method of depositing a thin film may include providing a wafer into a thin film apparatus, rotating the wafer, flowing a plasma across the wafer from edge to edge, depositing a first thin film on the wafer, creating a temperature gradient within the thin film apparatus, wherein the temperature at the center of the wafer is higher than the temperature at the edges of the wafer, and depositing a second thin film on the wafer.