Abstract: A gas capture system includes a first heat exchanger that exchanges heat between cold heat of a fuel that is vaporizing and a first gas mixture to cool the first gas mixture, a first dehumidifier that dehumidifies the first gas mixture cooled through the first heat exchanger, a first compressor that presses the first gas mixture passing through the first dehumidifier, a first separation device that separates a second gas mixture including a reference gas from the pressed first gas mixture, and a liquefier that liquefies the reference gas to generate a reference liquid.

Abstract: A display device includes a first electrode disposed on a substrate, a pixel defining layer exposing at least a part of the first electrode and disposed on the substrate, a light emitting layer disposed on the first electrode, a second electrode disposed on the light emitting layer, and an encapsulation layer disposed on the second electrode, wherein the pixel defining layer includes an overlapping area overlapping the first electrode and a non-overlapping area not overlapping the first electrode, the overlapping area includes a first overlapping area spaced apart from the first electrode and facing the first electrode, and the encapsulation layer is at least partially disposed in a space between the first electrode and the pixel defining layer in the first overlapping area.

Abstract: A display device includes first and second pixel electrodes disposed on a substrate and spaced apart from each other. An inorganic insulating layer is disposed on the substrate and partially overlaps the first and second pixel electrodes. A metal layer structure is disposed on the inorganic insulating layer and includes first and second openings overlapping the first and second pixel electrodes, respectively. First and second light-emitting layers are disposed on the first and second pixel electrodes, respectively. First and second common electrodes are disposed on the first and second light-emitting layers, respectively. The metal layer structure includes first and second metal layers alternately stacked with each other in which the first metal layers comprise uppermost and lowermost layers thereof. Each of the first metal layers includes metal tips that protrude beyond the second metal layers and are positioned on sidewalls of each of the first and second openings.

Abstract: Provided are a recombinant microorganisms having a genetic modification that increases the expression of bacterioferritin, a composition comprising the recombinant microorganism for use in reducing a nitrogen oxide concentration in a sample, and a method of reducing a nitrogen oxide concentration in a sample.

Abstract: A display device includes a substrate including a display area and a non-display area; a light-emitting array layer; an encapsulation structure; pads disposed in a pad area which is a part of the non-display area on the substrate; a dam structure disposed in the non-display area on the substrate and surrounding an edge of the display area; an encapsulation auxiliary structure corresponding to another part of the non-display area except the pad area, surrounding a part of an edge of the display area, and disposed between the dam structure and an edge of the substrate; and a first multilayer disposed between the substrate and each of the dam structure and the encapsulation auxiliary structure, and including an undercut structure by two or more different metal materials which are stacked.

Abstract: A strain sensor may have a conductive elastic yarn including a first fiber having a predetermined length and a shape of a fiber yarn and a second fiber having electrical conductivity and a sheet shape. The strain sensor may have a pair of wiring members electrically connected to both ends of the conductive elastic yarn. The conductive elastic yarn, with the second fiber wrapped around the first fiber, is twisted in a coil shape.

Abstract: A method of reducing a concentration of a nitrogen oxide, the method comprising: contacting a microorganism with a nitrogen oxide-containing sample to reduce the concentration of the nitrogen oxide in the sample, wherein the contacting comprises contacting the microorganism with Fe(II)(L)-NOx in a bioreactor, wherein the Fe(II)(L)-NOx is a complex in which a chelating agent, Fe2+, and NOx are chelated, wherein L is the chelating agent, and wherein NOx is a nitrogen oxide ligand.

Abstract: Provided are a hole machining apparatus for an optical film, comprising: a clamping part for fixing a plurality of optical films in stacked laminated state; and a machining part for performing a hole operation on a predetermined region of the plurality of optical films so as to sequentially pass through the optical films along the laminated direction in a state where the optical films are fixed to the clamping part, wherein upon the hole operation, the machining part comprises a drill part provided to perform a primary hole machining operation and a bite unit provided to perform a secondary hole operation in the primary hole operation region. Also provided is a hole machining method for an optical film, comprising clamping a plurality of laminated optical films at a predetermined pressure in the hole machining apparatus.

Abstract: The present invention relates to a sunscreen agent comprising cellulose nanofibers, and discloses a use of cellulose nanofibers having a UV blocking effect as a sunscreen agent. The cellulose nanofibers according to the present invention is an organic sunscreen agent derived from natural plants, and has a UV scattering mechanism, which is a sunscreen mechanism of an inorganic sunscreen agent, and thus has characteristics that are harmless to the human body or skin. Therefore, it may be applied as a sunscreen cosmetic, and is preferably used as a biomaterial for an additive in a synthetic resin composition such as a pharmaceutical composition for skin, a film and the like.

Abstract: A sputtering target includes: a first crystal comprising In2O3 in a bixbyite structure and SnO2 of a tetragonal structure; and a second crystal comprising In4Sn3O12 in an orthorhombic structure, wherein the second crystal accounts for 8 to 16% of a total size of the first and second crystals.